KR930005244A - Method of manufacturing trench type MOS transistor - Google Patents

Method of manufacturing trench type MOS transistor Download PDF

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Publication number
KR930005244A
KR930005244A KR1019910014040A KR910014040A KR930005244A KR 930005244 A KR930005244 A KR 930005244A KR 1019910014040 A KR1019910014040 A KR 1019910014040A KR 910014040 A KR910014040 A KR 910014040A KR 930005244 A KR930005244 A KR 930005244A
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KR
South Korea
Prior art keywords
trench
gate
forming
mos transistor
oxide film
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Application number
KR1019910014040A
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Korean (ko)
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KR940005733B1 (en
Inventor
장성진
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019910014040A priority Critical patent/KR940005733B1/en
Publication of KR930005244A publication Critical patent/KR930005244A/en
Application granted granted Critical
Publication of KR940005733B1 publication Critical patent/KR940005733B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음.No content.

Description

트렌치형 MOS 트랜지스터 제조방법Method of manufacturing trench type MOS transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제4도는 본 발명의 트렌치형 MOS 트랜지스터 제조공정단면도.FIG. 4 is a sectional view of the trench type MOS transistor manufacturing process of the present invention. FIG.

Claims (1)

트렌치를 이용한 MOS 트랜지스터에 있어서, 실리콘기판(1)위에 웰(7)을 형성하고 채널부위를 제외한 영역에 인버스 T형 산화막(8)을 형성하는 공정과, 전면에 질화막(6)을 증착하고 마스킹과 식각 공정으로 게이트와 n-영역을 정의하여 n-이온주입을 하는 공정과, 질화막(6)에 측벽질화막(9)을 형성하여 산화막(8)보다 깊지않게 트렌치를 형성하여 트렌치 내부에 얕은 산화막(10)을 형성하는 공정과, 질화막(6,9)을 제거하고 게이트 산화막(11)을 도포하여 트렌치와 n-이온 주입한 채널 윗부분에 게이트(3)를 형성하는 공정과, 게이트(3)에 측벽산화막(4)을 형성하여 n_이온주입으로 LDD구조의 소오스/드레인(2)을 형성하는 공정으로 이루어짐을 특징으로 하는 트렌치형 MOS 트랜지스터 제조방법.A method of manufacturing a MOS transistor using a trench, comprising the steps of: forming a well (7) on a silicon substrate (1) and forming an inversed T-type oxide film (8) on a region excluding a channel region; depositing a nitride film (6) and defining a gate and the n- region by an etching process to n - the step of ion implantation, and no deep than the oxide film 8 to form a nitride film side wall (9) in the nitride film 6 is formed by shallow trench oxide layer on the trench 10 step, trench and n to remove the nitride layer (6,9) is applied to the gate oxide film 11 to form the-step of forming a gate 3, a channel ion implantation and the upper part, a gate (3) to form a side wall oxide film (4) n _ in the ion implantation method of manufacturing a trench-type MOS transistors, characterized by constituted by any process of forming a source / drain (2) of the LDD structure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019910014040A 1991-08-14 1991-08-14 Manufacturing method of trench type mos transistor KR940005733B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910014040A KR940005733B1 (en) 1991-08-14 1991-08-14 Manufacturing method of trench type mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910014040A KR940005733B1 (en) 1991-08-14 1991-08-14 Manufacturing method of trench type mos transistor

Publications (2)

Publication Number Publication Date
KR930005244A true KR930005244A (en) 1993-03-23
KR940005733B1 KR940005733B1 (en) 1994-06-23

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ID=19318589

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910014040A KR940005733B1 (en) 1991-08-14 1991-08-14 Manufacturing method of trench type mos transistor

Country Status (1)

Country Link
KR (1) KR940005733B1 (en)

Also Published As

Publication number Publication date
KR940005733B1 (en) 1994-06-23

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