KR930002807B1 - Gold wire for bonding semiconductor element - Google Patents

Gold wire for bonding semiconductor element Download PDF

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KR930002807B1
KR930002807B1 KR1019860004266A KR860004266A KR930002807B1 KR 930002807 B1 KR930002807 B1 KR 930002807B1 KR 1019860004266 A KR1019860004266 A KR 1019860004266A KR 860004266 A KR860004266 A KR 860004266A KR 930002807 B1 KR930002807 B1 KR 930002807B1
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germanium
gold wire
beryllium
strength
gold
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KR870004508A (en
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야스오 후꾸이
다이요오 야마모도
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다나까 덴시 고오교오 가부시기가이샤
가도오 요시아끼라
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01205—5N purity grades, i.e. 99.999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01206—6N purity grades, i.e. 99.9999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
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  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Wire Bonding (AREA)

Abstract

내용 없음.No content.

Description

반도체 소자의 본딩(Bonding)용 금선(金線)Bonding gold wires for semiconductor devices

본 발명은 반도체의 칩 전극과 외부 리이드부를 접속하기 위하여 사용하는 반도체 소자의 본딩용 금선에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a gold wire for bonding a semiconductor element used to connect a chip electrode of a semiconductor and an external lead portion.

종래에 있어서, TC본딩법에 사용되는 금선으로서 순도가 99.995wt%이상의 금(Au)에 0.0003∼0.0030wt%의 게르마늄(Ge)을 첨가한 것을 볼수 있으나(일본국 특허공보 소화 54년 제24265호), 그 금선을 한층더 고순도로 하는 것에 의하여 불순물원소의 영향을 피해서 전기저항을 적게하는 것이 가능하다. 그런데 상기한 금선의 순도를 한층 더 높게하면, 상기한 게르마늄의 첨가량에 있어서는 금선의 기계적 강도가 약하게되기 때문에 선을 잡아당기는 가공중에 빈번하게 단선 일으켜서 제품에 대한 수률(收率)이 나쁘게 된다고 하는 이외에, 본딩할 때에 여러가지의 폐단과 손해가 발생하는 것이 판명되었다.Conventionally, as a gold wire used in the TC bonding method, it has been found that 0.0003 to 0.0030 wt% of germanium (Ge) is added to gold (Au) having a purity of 99.995 wt% or more (Japanese Patent Publication No. 24265, No. 24265). By making the gold wire even higher, it is possible to reduce the electrical resistance by avoiding the influence of the impurity element. However, when the purity of the gold wire is further increased, the mechanical strength of the gold wire is weakened in the amount of germanium added above, which causes frequent disconnection during the pulling process, resulting in poor yield to the product. It has been found that various bonds and damages occur when bonding.

즉 상기한 게르마늄의 첨가량으로서는, 연신은 크나 강도가 적어서 유연하기 때문에 루우프 형상이 불안정하게 되며, 또 접착강도가 적은 것이나 넥크(neck)절단이 발생하기 쉽다고 하는 문제가 있었다.In other words, the addition amount of germanium has a problem that the stretching is large and the strength is small and flexible, so that the shape of the loop becomes unstable, and the adhesion strength is low, and neck cutting is likely to occur.

그리하여 게르마늄의 첨가량을 증가하는 것이 생각되나, 그 첨가량이 0.0060wt%를 초과하면, 상기한 것과는 반대로 연신이 약간 적고 또한 강도는 크게 되나 지나치게 단단하게 되기 때문에 제 2 본딩부에 있어서의 접착강도가 적게 되어서 접착불량을 일으킨다고 하는 문제점이 있으며, 각각 연신과 강도가 서로 어울려서 만족한 기계적 강도를 달성할 수가 없었다.Thus, it is conceivable to increase the amount of germanium added, but if the amount exceeds 0.0060wt%, the stretching is slightly less and the strength is too high, but the strength is too hard, contrary to the above, so that the adhesive strength in the second bonding portion is small. There is a problem in that it causes a poor adhesion, and the stretching and strength match each other to achieve a satisfactory mechanical strength.

따라서 이상의 문제를 해결할려고 하는 본 발명의 기술적 과제는, 게르마늄 및 베릴륨(Be)의 적합한 첨가량의 상승효과에 의하여 고순도 금선의 인장강도나 고온강도등의 기계적 강도 및 본딩후의 접착강도를 크게 함과 아울러 넥크절단을 일으키지 않는 본딩용 금선을 제공함에 있다.Therefore, the technical problem of the present invention, which is intended to solve the above problems, increases the mechanical strength such as tensile strength and high temperature strength of high purity gold wire and the adhesive strength after bonding by synergistic effect of the appropriate addition amount of germanium and beryllium (Be). The present invention provides a bonding gold wire that does not cause neck cutting.

그러므로 이상의 기술적 과제를 달성하기 위한 본 발명의 기술적 수단은, 99.996∼99.99995wt%의 고순도 금에 0.0032∼0.0060wt%의 게르마늄 및 0.00001∼0.00009wt%의 베릴륨을 함유시키는 것이며, 이들 게르마늄과 베릴륨의 첨가한 총량중에서 그 게르마늄이 0.0032wt%미만이고 베릴륨이 0.00001wt% 미만이면, 양 원소의 상승효과가 나타나지 않기 때문에 인장강도나 고온강도등의 기계적 강도 및 접착강도가 적다.Therefore, the technical means of the present invention for achieving the above technical problem is to contain 0.0032-0.0060wt% germanium and 0.00001-0.00009wt% beryllium in 99.996-99.99995wt% high purity gold, and the addition of these germanium and beryllium If the germanium is less than 0.0032wt% and the beryllium is less than 0.00001wt%, the synergistic effect of both elements does not occur, so the mechanical and adhesive strengths such as tensile strength and high temperature strength are small.

또 게르마늄이 0.0060wt%를 초과하고 또한 베릴륨도 0.00009wt%를 초과하면, 단단하게 되어서 입계(粒界)파단이 발생하여 사용불능하게 된다.When germanium exceeds 0.0060 wt% and beryllium also exceeds 0.00009 wt%, it becomes hard and grain boundary fracture occurs and becomes unusable.

또한 상기한 금의 순도의 범위에 있어서의 게르마늄과 베릴륨의 첨가량의 총량은 금의 순도가 높게됨에 따라서 많게 되며, 순도가 낮게됨에 따라서 적게 되도록 하면 좋다.The total amount of germanium and beryllium added in the above-described purity range of gold may increase as the purity of gold increases, and decrease as the purity decreases.

또한 상기한 게르마늄과 베릴륨의 총량의 내역은, 게르마늄이 적을때 예컨대, 0.0032wt%인 경우 베릴륨은 0.00009wt%로 하고, 높은 경우 예컨대, 0.0060wt%인 경우 베릴륨은 0.00001wt%로 한다.Further, the above-described details of the total amount of germanium and beryllium are 0.00009 wt% when the germanium is low, for example, 0.0032 wt%, and beryllium is 0.00001 wt% when the germanium is high, for example, 0.0060 wt%.

그리고, 그 가장 적당한 값은 게르마늄 0.0040wt%에 대하여 베릴륨이 0.00005wt%이다.And the most suitable value is beryllium 0.00005 wt% with respect to germanium 0.0040 wt%.

본 발명은 이상과 같은 구성으로 한 것에 의하여 아래에 기재한 효과를 가지고 있다.This invention has the effect as described below by setting it as the above structure.

① 게르마늄과 베릴륨의 상승효과에 의하여 고순도 금의 인장강도나 고온 강도등의 기계적 강도의 향상을 도모할 수 있음과 아울러, 접착강도의 향상도 도모할 수가 있다.① The synergistic effect of germanium and beryllium can improve mechanical strength such as tensile strength and high temperature strength of high purity gold, and can also improve adhesive strength.

② 베릴륨을 첨가한 것에 의하여, 넥크 절단을 방지할 수가 있다.(2) By adding beryllium, the neck cutting can be prevented.

이하, 본 발명의 실시예에 대하여 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, the Example of this invention is described.

본 발명의 실시품의 시료는 99.996wt%, 99.999wt%, 99.9999wt%, 99.99995wt%의 금에 게르마늄 및 베릴륨을 첨가하여 용해 주조하고, 선을 잡아당기는 가공과 중간처리를 반복하여 지름 25㎛의 금선으로 마무리한 것이다.Samples of embodiments of the present invention were melt-molded by adding germanium and beryllium to 99.996 wt%, 99.999 wt%, 99.9999 wt%, and 99.99995 wt% gold, and the process of pulling lines and intermediate treatments were repeated. Finished with gold wire.

다음표(1)(2)(3)(4)는 상기한 각 시료의 인장강도나 고온강도등의 기계적성질, 접착강도 및 넥크절단의 유무등의 측정결과를 표시한 것이며, 상기한 각 표에 있어서의 시료 No. 1∼36은 본 발명의 실시품, 시료 제37, 제38은 비교품을 표시한다.The following table (1) (2) (3) (4) shows the measurement results such as mechanical properties such as tensile strength and high temperature strength, adhesive strength and presence or absence of neck cutting of each sample. Sample No. in 1-36 show the working product of this invention, the sample 37, and 38 the comparative product.

[표 1]TABLE 1

Figure kpo00001
Figure kpo00001

[표 2a]TABLE 2a

Figure kpo00002
Figure kpo00002

[표 2b]TABLE 2b

Figure kpo00003
Figure kpo00003

[표 3a]TABLE 3a

Figure kpo00004
Figure kpo00004

[표 3b]TABLE 3b

Figure kpo00005
Figure kpo00005

[표 4a]TABLE 4a

Figure kpo00006
Figure kpo00006

[표 4b]TABLE 4b

Figure kpo00007
Figure kpo00007

이 결과, 99.996∼99.99995wt%의 고순도 금에 0.0032∼0.0060wt%의 게르마늄 및 0.00001∼0.00009wt%의 베릴륨을 함유시키는 것에 의하여 상기한 효과를 확인할 수가 있다.As a result, the above-mentioned effect can be confirmed by containing 0.0032-0.0060 wt% germanium and 0.00001-0.00009 wt% beryllium in 99.996-99.99995 wt% of high purity gold.

Claims (1)

99.996∼99.99995wt%의 고순도 금에 0.0032∼0.0060wt%의 게르마늄 및 0.00001∼0.00009wt%의 베릴륨을 함유시킨 것을 특징으로 하는 반도체 소자의 본딩용 금선.A gold wire for bonding a semiconductor device comprising 99.996 to 99.99995 wt% of high purity gold containing 0.0032 to 0.0060 wt% of germanium and 0.00001 to 0.00009 wt% of beryllium.
KR1019860004266A 1985-10-26 1986-05-30 Gold wire for bonding semiconductor element KR930002807B1 (en)

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JP60241121A JPS62101061A (en) 1985-10-26 1985-10-26 Gold wire for bonding semiconductor element
JP241121 1985-10-26
JP241121/85 1985-10-26

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KR930002807B1 true KR930002807B1 (en) 1993-04-10

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JPH0686637B2 (en) * 1987-11-09 1994-11-02 三菱マテリアル株式会社 Au alloy fine wire for semiconductor element bonding with excellent loop formability

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