JPS62101061A - Gold wire for bonding semiconductor element - Google Patents

Gold wire for bonding semiconductor element

Info

Publication number
JPS62101061A
JPS62101061A JP60241121A JP24112185A JPS62101061A JP S62101061 A JPS62101061 A JP S62101061A JP 60241121 A JP60241121 A JP 60241121A JP 24112185 A JP24112185 A JP 24112185A JP S62101061 A JPS62101061 A JP S62101061A
Authority
JP
Japan
Prior art keywords
strength
beryllium
germanium
wire
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60241121A
Other languages
Japanese (ja)
Other versions
JPH0556652B2 (en
Inventor
Yasuo Fukui
福井　康夫
Taiyo Yamamoto
山本　太洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP60241121A priority Critical patent/JPS62101061A/en
Priority to US06/863,530 priority patent/US4775512A/en
Priority to KR1019860004266A priority patent/KR930002807B1/en
Priority to DE19863618560 priority patent/DE3618560A1/en
Priority to GB8613580A priority patent/GB2181157B/en
Publication of JPS62101061A publication Critical patent/JPS62101061A/en
Publication of JPH0556652B2 publication Critical patent/JPH0556652B2/ja
Granted legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01205—5N purity grades, i.e. 99.999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01206—6N purity grades, i.e. 99.9999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To improve the mechanical strength of a high-purity gold wire by a synergetic effect while increasing adhesive strength in a second bonding section by adequately adding Ge and Be to the gold wire for bonding. CONSTITUTION:0.0032-0.0060wt% germanium Ge and 0.00001-0.00009wt% beryllium are made to be contained in 99.996-99.99995wt% high-purity gold Au, melted and cast, and finished to an Au wire for bonding having a 25mum diameter by repeating wire drawing working and intermediate processing. Mechanical strength, such as the tensile strength, high-temperature strength, etc. of high-purity gold can be improved by the synergetic effect of germanium Ge and beryllium Be while adhesive strength can also be increased, and breaking at a neck can be prevented by the addition of beryllium Be.

Description

【発明の詳細な説明】 （産業上の利用分野） 本願は半導体のチップ電極と外部リード部とを接続する
ために使用する半導体素子のボンディング用金線の発明
に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present application relates to an invention of a gold wire for bonding a semiconductor element, which is used to connect a semiconductor chip electrode and an external lead portion.

（従来の技術とその問題点） 従来、ＴＣボンディング法に使用される金線として純度
が９９．９９５ｗｔ％以上の金に０．０００３〜０．０
０３０　ｗｔ％のゲルマニウム（Ｇｃ）を添加したもの
がみられるが（特公昭５４−２１１２６５）　、該金線
をさらに高純度とすることににり不純物元素の影響を避
けて電気抵抗を小さくすることが再能である。(Prior art and its problems) Conventionally, as a gold wire used in the TC bonding method, a gold wire with a purity of 99.995 wt% or more has a purity of 0.0003 to 0.0.
Gold wires doped with 0.30 wt% germanium (Gc) have been seen (Japanese Patent Publication No. 54-211265), but it is necessary to make the gold wire even more pure to avoid the effects of impurity elements and to reduce the electrical resistance. is re-enabled.

ところが、−り記金線の純度をさらに高くＪると、前記
ゲルマニウムの添加量では金線の機械的強度が弱くなる
ため、線引加工中に頻繁に断線を起こし歩留りが悪くな
る上にボンディング時に種々の弊害が生じることがわか
った。However, when the purity of the gold wire is further increased, the mechanical strength of the gold wire weakens due to the amount of germanium added, which leads to frequent wire breakage during the wire drawing process, resulting in poor yield and poor bonding. It has been found that various adverse effects sometimes occur.

叩ら、上記ゲルマニウムの添加量では、伸びは大きいが
強度が小さく柔らかいためにループ形状が不安定になり
、又、接着強度が小さいことや、ネック切れが発生しや
すいという問題があった。However, with the amount of germanium added above, the elongation is high, but the strength is low and the loop shape is unstable due to the softness, and there are also problems in that the adhesive strength is low and neck breakage is likely to occur.

そこで、ゲルマニウムの添加ωを０．００６０ｗｔ％を
越えるとふやし、前記とは逆に若干伸びは小さりｔＴる
が強度が大きく硬くなりすぎるため、第２ボンディング
部にＪ５ける接着不良を４３こして接着強度が弱くなる
といった問題があり、夫々伸びと強度が相俟って満足な
機械的強度を達成することが出来１．家かった。Therefore, by increasing the addition ω of germanium to more than 0.0060wt%, contrary to the above, the elongation will be slightly smaller tT, but the strength will be too large and it will become too hard, resulting in poor adhesion of J5 at the second bonding part. There is a problem that adhesive strength becomes weak, but satisfactory mechanical strength cannot be achieved by the combination of elongation and strength.1. It was home.

（発明が解決しようとする技術的課題）以上の問題を解
決しようとヂる本発明の技術的課題は、Ｇｃ及びＢｅの
適合添加徂の相乗効果によって高純度金線の様械的強度
の向１を図ると共に、第２ボンディング部にお（」る接
着強度を強めることである。(Technical Problem to be Solved by the Invention) The technical problem to be solved by the present invention is to improve the mechanical strength of high-purity gold wire through the synergistic effect of compatible additions of Gc and Be. The objective is to increase the adhesive strength at the second bonding part.

（技術的課題を達成するための技術的手段）以上の技術
的課題を達成するための本発明の技術的手段は、９９．
９９６〜９９．９９９９５ｗｔ％の高純度金（八〇）に
０．００３２〜Ｑ、ＱＯ６０ｗｔ％（７）　ｌｊ　）Ｌ
ｒ　マニウム（Ｇｅ）及び０．ＱＯＯＱｌ　〜０．００
００９ｗｔ％ノヘＩＪすｆクム（Ｂｅ）を含有せしめる
ことであり、該ゲルマニウムがＱ、００３２　ｗｔ％未
満、或いはベリリウムが０．００００１ｗｔ％未満であ
ると、両元素の相乗効果が現われず機械的強度が小さい
と共に接着強度も弱い。(Technical means for achieving the technical problem) The technical means of the present invention for achieving the above technical problem is as follows.
996-99.99995wt% high purity gold (80) with 0.0032-Q, QO60wt% (7) lj )L
r manium (Ge) and 0. QOOQl ~0.00
If the germanium content is less than 0.0032 wt% or the beryllium content is less than 0.00001 wt%, the synergistic effect of both elements will not appear and the mechanical strength will decrease. is small and the adhesive strength is also weak.

又、ゲルマニウムが０．００６０　ｗｔ％及びＢｅが０
、　ｏｏｏｏ’＋ｗｔ％を越えると、硬くなって使用不
能となり、粒界破断を生じる。In addition, germanium is 0.0060 wt% and Be is 0.
, oooo'+wt%, it becomes hard and unusable, causing intergranular fracture.

又、前記金の純度の範囲におけるゲルマニウムとベリリ
ウムの添加量の総量は、金の純度が高くなるにつれて多
く　’ＴＥす、純度が低くなるにつれて少なくなるよう
にするとよい。Further, the total amount of germanium and beryllium added in the gold purity range is preferably such that the higher the purity of the gold, the higher the amount, and the lower the purity, the lower the total amount of germanium and beryllium added.

更に、前記ゲルマニウムとベリリウムの総量のうられけ
ｔま、ゲルマニウムが少ないとぎ、例えば０．００３２
　ｗｔ％の場合はベリリウムは０、００００９岨％とし
、高い場合、例えば０．００６０ｗｔ％の場合はベリリ
ウム０．００００１ｗｔ％とする。Furthermore, if the total amount of germanium and beryllium is low, for example, 0.0032
In the case of wt%, beryllium is set to 0.00009 wt%, and when it is high, for example, 0.0060 wt%, beryllium is set to 0.00001 wt%.

そして、その最適（直はゲルマニウム０．００４０　ｗ
ｔ％に対してベリリウムが０．００００５ｗｔ％である
。And its optimum (direct germanium 0.0040 w
Beryllium is 0.00005 wt% with respect to t%.

（発明の効果〉 本発明は以−Ｌの様な構成にしたことにより下記の効果
を有する。(Effects of the Invention) The present invention has the following effects by having the configuration as described below.

■　ゲルマニウム（Ｇｅ）とベリリウム（Ｂｅ）との相
乗効果により高純度金の機械的強度の向上を図ることが
できると共に、接着強度の向上をも図ることができる。(2) Due to the synergistic effect of germanium (Ge) and beryllium (Be), it is possible to improve the mechanical strength of high-purity gold and also to improve the adhesive strength.

■　ベリリウム（８ｅ）を添加したことにより、ネック
切れを防止することができる。■ By adding beryllium (8e), neck breakage can be prevented.

（実施例〉 本発明の実施品の試料は９９．９９９ｗｔ％の金（Ａｕ
）に高純度のゲルマニウム（Ｇｃ）及びベリリウム（Ｂ
ｅ）を添加して溶′ＩＩ鋳造し、線引加工と中間熱！２
！Ｘ理とをくり返して直径２５μｍのＡｕ線に仕上げた
ものである。(Example) A sample of an implementation product of the present invention was made of 99.999wt% gold (Au
) with high purity germanium (Gc) and beryllium (B
Add e), perform melting II casting, wire drawing and intermediate heat! 2
! By repeating X-processing, an Au wire with a diameter of 25 μm was produced.

次表（１）、（２）、（３）、（４）は各試料の機械的
性質を測定した結果を示したものである。Tables (1), (2), (3), and (4) below show the results of measuring the mechanical properties of each sample.

この結果、９９．９９Ｇ〜９９．９９９９５ｗｔ％の高
純度（八Ｕ）に０．００３２〜０．００６０　ｗｔ％の
ゲルマニウ（Ｇｃ）及び０．００００１〜０．００００
９ｗｔ％のベリラム（Ｂｅ）を含有せしめることにより
前記効を確認することができた。As a result, high purity (8U) of 99.99G to 99.99995 wt%, germanium (Gc) of 0.0032 to 0.0060 wt% and 0.00001 to 0.0000
The above effect could be confirmed by containing 9 wt% of beryllum (Be).

特　許　出　願　人　　　田中電子工業株式会代　　　
　　理　　　　　人　　　　　早　　　川　　　政金　
　　　　　　手続補正書 ウ　　　　　　　　　　　　　　畦６１ｆｆ　２Ｊ１２
５８リ　　　　特許庁長官　　　宇　　賀　　通　　部
　　　殿１、事件の表示 昭和６０年特　許　願第２４１１２１号２、発明の名称 半導体素子のボンディング用金線 ３、補正をする者 ４、代理人 昭和　　年　　月　　日 別紙の通り　　　　　１７．オ。Patent applicant Tanaka Electronics Co., Ltd.
Masakane Hayakawa
Procedural amendment C ridge 61ff 2J12
58 Li Director General of the Patent Office Uga Tsububu 1, Indication of the case 1985 Patent Application No. 241121 2, Name of the invention Gold wire for bonding of semiconductor devices 3, Person making the amendment 4, Agent Date of Month, 1988 As per attached sheet 17. Oh.

−ｍ−′ 補　　　正　　　書 １）明細書中筒２頁の１３行目〜１７行目の［そこで、
・・・といった問題があり、］を［そこで、ゲゲルマニ
ラの添加量を増すことが考えられるが、その添加量が０
．００６０　ｗｔ％を越えると、前記とは逆に伸びが若
干小さくかつ強度は大きくなるが、硬くなりすぎるため
第２ボンディング部にお番）る接着強度が小さくなって
接着不良を起すといった問題点があり、」と補正する。-m-' Amendment 1) Lines 13 to 17 of page 2 of the specification [there,
There is a problem such as... ][Therefore, it is possible to increase the amount of Gegel Manila added, but if the amount added is 0
．． If it exceeds 0060 wt%, contrary to the above, the elongation will be slightly smaller and the strength will be higher, but it will become too hard and the adhesive strength at the second bonding part will be lower, resulting in poor adhesion. Yes,” he corrected.

２）明［Ｉ書中第３頁の４行目〜６行目の［よって高純
度金線の・・・強めることである。］を［よって高純度
金線の引張強度や高温強度等の機械的強度及びボンディ
ング後の接着強度を大きくすると共にネック切れを起さ
ないボンディング用金線を提供することである。2) Bright [I, page 3, lines 4 to 6] [Thus, it is to strengthen the high-purity gold wire.] [Thus, the object of the present invention is to provide a gold wire for bonding which has high mechanical strength such as tensile strength and high-temperature strength of a high-purity gold wire, and adhesive strength after bonding, and which does not cause neck breakage.

３）明細書中箱３頁の１２行目〜１９行目の「・・・を
含有せしめることであり、・・・を生じる。」を［・・
・を含有ぜしめることであり、これらゲルマニウム（Ｇ
ｅ）とベリリウム（Ｂｅ）の添加総量中、該ゲルマニウ
ム（Ｇｅ）が０．００３２ｗｔ％未満で、ベリリウム（
Ｂｅ）が０．００００１ｗｔ％未満テアルト、両元素の
相乗効果が現われないため引張強度やＩＸ温強度等の機
械的強度及び接着強度が小さい。3) In box 3, page 3 of the specification, lines 12 to 19, ``Inclusion of..., resulting in...'' is changed to [...
・These germanium (G
e) and beryllium (Be), the germanium (Ge) is less than 0.0032 wt%, and beryllium (
When Be) is less than 0.00001 wt%, mechanical strength such as tensile strength and IX temperature strength and adhesive strength are low because no synergistic effect between the two elements appears.

又、ゲルマニウム（Ｇｅ）が０．００６０ｗｔ％を越え
、かつベリリウム（Ｂｅ）も０．００００９ｗｔ％を越
えると硬くなって粒界破断を生じ、使用不能となる。」
と補正する。Further, if germanium (Ge) exceeds 0.0060 wt% and beryllium (Be) exceeds 0.00009 wt%, the material becomes hard and grain boundary fracture occurs, making it unusable. ”
and correct it.

４）明細書中筒４頁の１５行目の［・・・高純度金の機
械的強度の・・・」を［・・・高純度金の引張強度や高
温強度等の機械的強度の・・・」と補正する。4) In the 15th line of page 4 of the specification, change [...mechanical strength of high-purity gold...] to [...mechanical strength such as tensile strength and high-temperature strength] of high-purity gold. "..." is corrected.

５）明ａｍ中第５頁の２行目〜９行目の［本発明の・・
・ある。」を下記の通り補正する。5) [The present invention...
·be. ' shall be corrected as follows.

記 ［本発明の実施品の試料は９９．９９６ｗｔ％、９９．
９９９ｗｔ％、９９．９９９９　ｗｔ％、９９．９９９
９５ｗｔ％の金（＾Ｕ）にゲルマニウム（Ｇｅ）及びベ
リリ「クム（Ｂｅ）を添加して溶解鋳造し、線引加工と
中間処理とをくり返して直径２５μｍのＡｕ線に仕上げ
たものである。[The sample of the product according to the present invention was 99.996 wt%, 99.99% by weight.
999wt%, 99.9999wt%, 99.999
It is made by adding germanium (Ge) and beryllium cum (Be) to 95 wt% gold (^U), melting and casting it, and repeating wire drawing and intermediate processing to create an Au wire with a diameter of 25 μm.

次表（１）、（２）、（３）、（４）は上記各試料の引
張強度や高温強度等の機械的性質。The following tables (1), (2), (3), and (4) show the mechanical properties such as tensile strength and high temperature strength of each of the above samples.

接着強度及びネック切れの有無等の測定結果を示したも
のであり、前記各人にお番プる試料Ｎ０１１〜３６は本
発明の実施品、Ｎｏ、　３７．３８は比較量を示す。It shows the measurement results of adhesive strength and the presence or absence of neck breakage, etc. Samples No. 11 to 36, which are available to each person, are the products according to the present invention, and No. 37.38 shows the comparative amount.

６）明細書中箱６頁の表（１）を下記の通り補正する。6) Table (1) on page 6 of the specification box is amended as follows.

（次頁に続く） ７）明細内中第７頁の表（２）を次の通り補正する。(continued on next page) 7) Table (2) on page 7 of the specification is amended as follows.

（次頁に続く） ８）明細書中筒８頁の表（３）を次の通り補正する。(continued on next page) 8) Table (3) on page 8 of the specification is amended as follows.

（次頁に続く） ９）明細書中筒９頁の表（４）を次の通り補正する。(continued on next page) 9) Table (4) on page 9 of the specification is amended as follows.

（次頁に続く）(continued on next page)

Claims (1)

【特許請求の範囲】[Claims] ９９．９９６〜９９．９９９９５ｗｔ％の高純度金（Ａ
ｕ）に０．００３２〜０．００６０ｗｔ％のゲルマニウ
ム（Ｇｅ）及び０．００００１〜０．００００９ｗｔ％
のベリリウム（Ｂｅ）を含有せしめたことを特徴とする
半導体素子のボンディング用金線。High purity gold (A
u) 0.0032 to 0.0060 wt% germanium (Ge) and 0.00001 to 0.00009 wt%
1. A gold wire for bonding semiconductor devices, characterized in that it contains beryllium (Be).
JP60241121A 1985-10-01 1985-10-26 Gold wire for bonding semiconductor element Granted JPS62101061A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60241121A JPS62101061A (en) 1985-10-26 1985-10-26 Gold wire for bonding semiconductor element
US06/863,530 US4775512A (en) 1985-10-01 1986-05-15 Gold line for bonding semiconductor element
KR1019860004266A KR930002807B1 (en) 1985-10-26 1986-05-30 Gold wire for bonding semiconductor element
DE19863618560 DE3618560A1 (en) 1985-10-01 1986-06-03 GOLD LEAD FOR CONNECTING SEMICONDUCTOR ELEMENTS
GB8613580A GB2181157B (en) 1985-10-01 1986-06-04 Gold line for bonding semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60241121A JPS62101061A (en) 1985-10-26 1985-10-26 Gold wire for bonding semiconductor element

Publications (2)

Publication Number Publication Date
JPS62101061A true JPS62101061A (en) 1987-05-11
JPH0556652B2 JPH0556652B2 (en) 1993-08-20

Family

ID=17069595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60241121A Granted JPS62101061A (en) 1985-10-01 1985-10-26 Gold wire for bonding semiconductor element

Country Status (2)

Country Link
JP (1) JPS62101061A (en)
KR (1) KR930002807B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01127635A (en) * 1987-11-09 1989-05-19 Mitsubishi Metal Corp Fine au alloy wire for bonding semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01127635A (en) * 1987-11-09 1989-05-19 Mitsubishi Metal Corp Fine au alloy wire for bonding semiconductor device

Also Published As

Publication number Publication date
JPH0556652B2 (en) 1993-08-20
KR870004508A (en) 1987-05-11
KR930002807B1 (en) 1993-04-10

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