JPH0530891B2 - - Google Patents
Info
- Publication number
- JPH0530891B2 JPH0530891B2 JP62157089A JP15708987A JPH0530891B2 JP H0530891 B2 JPH0530891 B2 JP H0530891B2 JP 62157089 A JP62157089 A JP 62157089A JP 15708987 A JP15708987 A JP 15708987A JP H0530891 B2 JPH0530891 B2 JP H0530891B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- gold
- weight
- bonding wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052788 barium Inorganic materials 0.000 claims abstract description 16
- 229910052737 gold Inorganic materials 0.000 claims abstract description 14
- 239000010931 gold Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 9
- 229910052709 silver Inorganic materials 0.000 claims abstract description 8
- 239000004332 silver Substances 0.000 claims abstract description 8
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 7
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 15
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 7
- 239000011575 calcium Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 abstract description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01056—Barium [Ba]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/012—Semiconductor purity grades
- H01L2924/01204—4N purity grades, i.e. 99.99%
Abstract
Description
発明の属する技術分野
本発明は、半導体素子と外部リードとを接続す
るためのボンデイング用ワイヤに関するものであ
る。
従来の技術
半導体素子の電極と外部リードを電気的に接続
するための一方向として、金やアルミニウムなど
の直径数μｍ〜数十μｍの極細線を用いて結線す
るワイヤボンデイング方式が広く行われている。
なかでも金は優れた耐食性、延展性及びボンデイ
ング性能を有しているため、従来より純度99.99
％程度の純金線が最も一般的に使用されてきた。
金ワイヤを用いるボンデイング法は、通常熱圧
着法が採用される。これは、金線を電気的に切断
するか、水素炎で溶断して先端にボールを形成
し、このボールを半導体素子の電極に加熱加圧接
合し、次いで外部リードにワイヤの他端を加熱加
圧して接合するもので、全工程が200〜300℃の高
温下で行われる。
近年ボンデイングの自動化、高速化が図られて
いるが、高速ボンデイングを行う場合、従来の純
金線はボンデイング工程中線切れを行したり、熱
により軟化したりするため使用できず、より信頼
性の高いワイヤが要求される。即ち、
(1) ボンデイング中の線切れ防止のため機械的強
度、特に高温下での引張強度がより強いこと、
(2) 加熱時の軟化によるループのたるみがないこ
と、
(3) 樹脂モールド時にも軟化変形しないこと、
(4) ボンデイング強度のばらつきをなくすため、
ボール形状が一定で真球に近いこと、
などの点でボンデイング性能の向上が必要であ
る。これまでに高純度金線に種々の元素を添加し
て、これらの特性を改善する試みがなされてき
た。例えば特公昭57−34659号や特公昭58−26662
号にはカルシウムやベリリウムの微量添加により
強度が改善されることが述べられており、その
他、白金、パラジウム、銀、チタン、マグネシウ
ム等多くの添加元素が提案されている。
発明が解決すべき問題点
本発明の目的は、上記特性の改善に効果のある
元素を見出し、これにより新規な組成の、高速ボ
ンデイングに適した高張力金ボンデイングワイヤ
を得ることにある。
問題点を解決するための手段
本発明者らは、特定量のバリウムを添加した金
ボンデイングワイヤについて先に特許出願を行つ
たが（特願昭61−120790号）、更に検討した結果、
バリウムと他の特定元素の組合わせにより優れた
効果が得られることがわかつた。
即ち本発明は、(a)バリウムを0.0003〜0.0099重
量％と、(b)アルミニウム0.0005〜0.005重量％、
カルシウム0.0001〜0.003重量％、銀0.0005〜
0.005重量％及びパラジウム0.0005〜0.005重量％
から選ばれる１種または２種以上の元素とを含有
し、かつ純度が99.99％以上である高純度金から
なるボンデイングワイヤである。
作 用
バリウムを添加した金ワイヤは、バリウムを添
加しない従来の純金線に比べて常温及び高温にお
ける強度が大きく、高速ボンダーによつてボンデ
イングを行つても線切れ、ループのたるみ、軟化
変形が生じない。又ボール形状も一定でばらつき
が少なく、極めて信頼性が高いものである。更に
強度が強いのでワイヤ製造工程においても伸線中
の断線が少なく、加工性が良好である。このバリ
ウムを添加した金ワイヤに更に(b)の元素を含有さ
せると、バリウムが少量で同等の特性が得られ、
特にアルミニウムやカルシミウムとの組合わせで
は、バリウムとの相乗効果により不純物としての
添加元素の総量を低減させることができる。
バリウムの添加量が0.0003重量％より少ない
と、上記特性の改善効果がほとんど認められな
い。又他の添加元素(b)との合計で0.01重量％を越
えると、抵抗値が増大するとともにボール形状が
真球にならないので望ましくない。アルミニウム
の添加量が0.005重量％を越えると、ボール形状
が真球にならず、又伸線性が悪くなる。カルシウ
ム、銀、パラジウムの添加量がそれぞれ0.003重
量％、0.005重量％、0.005重量％を越えると、伸
線性が悪くなるので望ましくない。
又本発明の金ワイヤは、信頼性の点から最終的
な金純度が99.99％以上であることが必要である。
一定品質を維持するためには、望ましくは原料と
して99.999％以上の純度にまで精製された金を使
用し、これにバリウムを添加するのがよい。
ワイヤを製造するには、公知のいかなる方法で
もよい。例えば所定量のバリウムを金に添加して
溶解鋳造し、鍛造するか又は溝ロール加工で圧延
した後、伸線加工して直径数μｍ〜数十μｍのワ
イヤを製造する。
実施例
実施例 １
99.999％以上の純度の金にバリウム0.005重量
％とアルミニウム0.002重量％とを添加して溶解
し、鋳造した後、鋳造し、次いで伸線加工して直
径25μｍのボンデイングワイヤを製造した。
得られたワイヤについて、室温における破断伸
び率が約４％となるように熱処理を行つた後、常
温における破断強度及び250℃に25秒間保持した
後の破断強度を調べ、破断伸び率とともに表１に
示した。
実施例 ２〜９
バリウム及びアルミニウム、カルシウム、銀、
パラジウムの添加量をそれぞれ表１に示すとおり
とする以外は、実施例１と同様にしてボンデイン
グワイヤを製造した。これらのワイヤについて常
温及び高温強度を測定し、破断伸び率とともに表
１に示した。
尚、実施例１〜９で得られたワイアは、ワイヤ
ボンデイング時のボール形成性、ループ形状とも
極めて良好であつた。
比較例 １
バリウムを添加しない純度99.99％以上の従来
の純金線（直径25μｍ）について同様に破断強度
を測定し、結果を表１に示した。
表１より、本発明実施例のワイヤは、常温及び
高温において適度な伸び率を維持しながら、強度
が大きく改善されていることが明らかである。
TECHNICAL FIELD The present invention relates to a bonding wire for connecting a semiconductor element and an external lead. Conventional technology Wire bonding is widely used as one way to electrically connect the electrodes of semiconductor elements and external leads, using ultra-fine wires made of gold or aluminum with diameters of several μm to several tens of μm. There is.
Among them, gold has excellent corrosion resistance, spreadability, and bonding performance, so it has traditionally been purified to a purity of 99.99.
% pure gold wire has been most commonly used. As a bonding method using gold wire, a thermocompression bonding method is usually adopted. This involves cutting the gold wire electrically or fusing it with a hydrogen flame to form a ball at the tip, bonding this ball to the electrode of the semiconductor element under heat and pressure, and then heating the other end of the wire to the external lead. Bonding is performed under pressure, and the entire process is carried out at high temperatures of 200 to 300 degrees Celsius. In recent years, efforts have been made to automate and increase the speed of bonding, but when performing high-speed bonding, conventional pure gold wire cannot be used because it breaks during the bonding process or softens due to heat. High wire required. In other words, (1) mechanical strength, especially tensile strength at high temperatures, is stronger to prevent wire breakage during bonding, (2) loops do not sag due to softening during heating, and (3) during resin molding. (4) To eliminate variations in bonding strength,
It is necessary to improve bonding performance in terms of the ball shape being constant and close to a perfect sphere. Up to now, attempts have been made to improve these properties by adding various elements to high-purity gold wire. For example, Special Publication No. 57-34659 and Special Publication No. 58-26662
The issue states that strength can be improved by adding small amounts of calcium or beryllium, and many other additive elements such as platinum, palladium, silver, titanium, and magnesium have been proposed. Problems to be Solved by the Invention An object of the present invention is to find an element that is effective in improving the above-mentioned properties, and thereby obtain a high-tensile gold bonding wire with a novel composition suitable for high-speed bonding. Means for Solving the Problems The present inventors had previously filed a patent application for a gold bonding wire doped with a specific amount of barium (Japanese Patent Application No. 120790/1982), but after further study,
It has been found that excellent effects can be obtained by combining barium with other specific elements. That is, the present invention includes (a) 0.0003 to 0.0099% by weight of barium, (b) 0.0005 to 0.005% by weight of aluminum,
Calcium 0.0001~0.003% by weight, silver 0.0005~
0.005% by weight and palladium 0.0005-0.005% by weight
This bonding wire is made of high-purity gold that contains one or more elements selected from the following and has a purity of 99.99% or more. Effect Gold wire with barium added has greater strength at room and high temperatures than conventional pure gold wire without barium, and even when bonded with a high-speed bonder, wire breakage, loop sagging, and softening deformation occur. do not have. In addition, the ball shape is constant, with little variation, and is extremely reliable. Furthermore, because of its strong strength, there are fewer wire breaks during wire drawing in the wire manufacturing process, and workability is good. If this barium-added gold wire further contains element (b), the same characteristics can be obtained with a small amount of barium,
In particular, in combination with aluminum or calcium, the total amount of added elements as impurities can be reduced due to the synergistic effect with barium. If the amount of barium added is less than 0.0003% by weight, hardly any improvement effect on the above properties will be observed. Moreover, if the total amount exceeds 0.01% by weight with the other additive element (b), the resistance value increases and the ball shape does not become a perfect sphere, which is not desirable. If the amount of aluminum added exceeds 0.005% by weight, the ball shape will not be a true sphere and the wire drawability will deteriorate. If the amounts of calcium, silver, and palladium added exceed 0.003% by weight, 0.005% by weight, and 0.005% by weight, respectively, the wire drawability deteriorates, which is not desirable. Further, the gold wire of the present invention needs to have a final gold purity of 99.99% or more from the viewpoint of reliability.
In order to maintain a constant quality, it is desirable to use gold refined to a purity of 99.999% or higher as a raw material, and to add barium to this. Any known method may be used to manufacture the wire. For example, a predetermined amount of barium is added to gold, which is melted and cast, forged or rolled by groove roll processing, and then wire drawn to produce a wire with a diameter of several μm to several tens of μm. Examples Example 1 0.005% by weight of barium and 0.002% by weight of aluminum are added to gold with a purity of 99.999% or higher, melted and cast, and then wire-drawn to produce a bonding wire with a diameter of 25 μm. did. The obtained wire was heat-treated so that the elongation at break at room temperature was about 4%, and then the breaking strength at room temperature and the breaking strength after being held at 250°C for 25 seconds were examined, and the results are shown in Table 1 along with the elongation at break. It was shown to. Examples 2-9 Barium and aluminum, calcium, silver,
Bonding wires were manufactured in the same manner as in Example 1, except that the amount of palladium added was as shown in Table 1. The strength at room temperature and at high temperature was measured for these wires, and the results are shown in Table 1 along with the elongation at break. The wires obtained in Examples 1 to 9 had extremely good ball formability and loop shape during wire bonding. Comparative Example 1 The breaking strength of a conventional pure gold wire (diameter 25 μm) with a purity of 99.99% or higher without the addition of barium was measured in the same manner, and the results are shown in Table 1. From Table 1, it is clear that the wires of the examples of the present invention have significantly improved strength while maintaining appropriate elongation at room temperature and high temperature.
【表】
発明の効果
本発明の(a)バリウムと、(b)アルミニウム、カル
シウム、銀及びパラジウムから選ばれる１種また
は２種以上の元素とを添加した金ボンデイングワ
イヤは、常温及び高温における機械的強度が大き
く、ボール形状やループ形状も良好で安定してい
るなどボンデイング性能が極めて優れており、半
導体のワイヤボンデイング用として信頼性が高い
ものである。又ボンデイング作業時の生産性、歩
留りがよく、特に高速ボンデイング用に適してい
る。[Table] Effects of the Invention The gold bonding wire of the present invention to which (a) barium and (b) one or more elements selected from aluminum, calcium, silver and palladium are added can be used in machines at room temperature and high temperature. It has extremely excellent bonding performance, such as high mechanical strength, good and stable ball and loop shapes, and is highly reliable for semiconductor wire bonding. It also has good productivity and yield during bonding work, and is particularly suitable for high-speed bonding.
Claims (1)
ルミニウム0.0005〜0.005重量％、カルシウム
0.0001〜0.003重量％、銀0.0005〜0.005重量％及
びパラジウム0.0005〜0.005重量％から選ばれる
１種または２種以上の元素とを含有し、かつ純度
が99.99％以上である高純度金からなるボンデイ
ングワイヤ。1 (a) 0.0003 to 0.0099% by weight of barium, (b) 0.0005 to 0.005% by weight of aluminum, calcium
A bonding wire made of high-purity gold with a purity of 99.99% or more and containing one or more elements selected from 0.0001 to 0.003% by weight, 0.0005 to 0.005% by weight of silver, and 0.0005 to 0.005% by weight of palladium. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157089A JPS644441A (en) | 1987-06-24 | 1987-06-24 | Bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62157089A JPS644441A (en) | 1987-06-24 | 1987-06-24 | Bonding wire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS644441A JPS644441A (en) | 1989-01-09 |
| JPH0530891B2 true JPH0530891B2 (en) | 1993-05-11 |
Family
ID=15642005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62157089A Granted JPS644441A (en) | 1987-06-24 | 1987-06-24 | Bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS644441A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2231336B (en) * | 1989-04-28 | 1993-09-22 | Tanaka Electronics Ind | Gold wire for the bonding of a semiconductor device |
| JP2729852B2 (en) * | 1990-08-07 | 1998-03-18 | 本田技研工業株式会社 | Manufacturing method of ironing punch used for molding of outer ring for ball joint |
| JP2641000B2 (en) * | 1991-12-26 | 1997-08-13 | 新日本製鐵株式会社 | Gold alloy fine wire for bonding |
-
1987
- 1987-06-24 JP JP62157089A patent/JPS644441A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS644441A (en) | 1989-01-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |