KR920020233A - 자기광학소자 및 자계측정장치 - Google Patents

자기광학소자 및 자계측정장치 Download PDF

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KR920020233A
KR920020233A KR1019920006943A KR920006943A KR920020233A KR 920020233 A KR920020233 A KR 920020233A KR 1019920006943 A KR1019920006943 A KR 1019920006943A KR 920006943 A KR920006943 A KR 920006943A KR 920020233 A KR920020233 A KR 920020233A
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magneto
optical
magnetic field
iron
value
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KR1019920006943A
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English (en)
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KR970000907B1 (ko
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노브끼 이또
히로카즈 야마다
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다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/032—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/032—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect
    • G01R33/0322—Measuring direction or magnitude of magnetic fields or magnetic flux using magneto-optic devices, e.g. Faraday or Cotton-Mouton effect using the Faraday or Voigt effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
    • H01F1/342—Oxides
    • H01F1/344—Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4
    • H01F1/346—[(TO4) 3] with T= Si, Al, Fe, Ga
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/20—Ferrites
    • H01F10/24—Garnets
    • H01F10/245—Modifications for enhancing interaction with electromagnetic wave energy

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Measuring Magnetic Variables (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

자기광학소자 및 자계측정장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 자기광학소자의 감도정수의 온도변화를 표시한 도면,
제2도는 본 발명에 의한 자기광학소자 가운데에서 감도정수의 온도변화가 가장 작은 자기광학소자의 온도특성을 표시한 도면,
제3도는 본 발명에 의한 자기광학소자의 규격화한 투과스펙트럼을 표시한 도면.

Claims (5)

  1. 일반식(화학식 ①)으로 표시되는 Bi치환회토류철가아닛결정에 있어서 X의 값을 0.8X1.3, 또한 Y의 값을 0.1Y0.3, 또한 Z의 값을 0.1Z1.0, 또한 W의 값을 0.3W0.8로 한 것을 특징으로 하는 자기광학소자, 여기서, R은 회토류원소에서 선택되는 적어도 1종류의 원소이다.
    (BiXGdYR2Y3-X-Y-Z)(Fe5-WGaw)O12..........(화학식 ①)
  2. 제1항에 있어서, Bi 치환회토류철가아닛결정을 가아닛결정기판위에 에피택셜 성장시켜서 형성하는 것을 특징으로 하는 자기광학소자.
  3. 제2항에 있어서, 가아닛 결정기판이 Ca-Mg-Zr치환형 Gd3Ga5O12기판 또는 Nd3Ga5O12기판인 것을 특징으로 하는 자기광학소자.
  4. 투과편광방향을 서로 다르게한 편광자와 검광자와의 사이에 일반식 상기 화학식①으로 표시되는 특허청구범위 제1항기재의 Bi치화회토류철가아닛결정으로 이루어진 자기광학소자를 배치한 자기광학변환부의 양단부에 형성된 광전송로와, 상기 광전송로에 광을 입사하는 광발생수단과, 상기 입사광이 상기 자기광학변환부를 투과한 후의 광출력을 검지하고, 전기신호로 변환하는 검지수단과, 상기 검지수단으로부터의 전기신호를 처리하는 전기 회로를 구비하고, 상기 자기광학변환부를 자계중에 배치하므로서, 자계광도를 검출하는 것을 특징으로 하는 자계측정장치.
  5. 제4항에 있어서, 파장 0.78㎛에부터 0.90㎛의 사이에 발광피이크파장을 가지는 광발생수단을 사용하는 것을 특징으로 하는 자계측정장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920006943A 1991-04-25 1992-04-24 자기광학소자 및 자계측정장치 KR970000907B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP3095812A JPH0782164B2 (ja) 1991-04-25 1991-04-25 磁気光学素子及び磁界測定装置
JP91-95812 1991-04-25

Publications (2)

Publication Number Publication Date
KR920020233A true KR920020233A (ko) 1992-11-20
KR970000907B1 KR970000907B1 (ko) 1997-01-21

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Family Applications (1)

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KR1019920006943A KR970000907B1 (ko) 1991-04-25 1992-04-24 자기광학소자 및 자계측정장치

Country Status (5)

Country Link
US (1) US5212446A (ko)
EP (1) EP0510621B1 (ko)
JP (1) JPH0782164B2 (ko)
KR (1) KR970000907B1 (ko)
DE (1) DE69226394T2 (ko)

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JP3144928B2 (ja) * 1991-12-19 2001-03-12 株式会社東芝 光センサ
JPH05333124A (ja) * 1992-06-03 1993-12-17 Mitsubishi Gas Chem Co Inc 反射型光磁界センサヘッド
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JP3458865B2 (ja) * 1994-05-23 2003-10-20 三菱瓦斯化学株式会社 低飽和磁界ビスマス置換希土類鉄ガーネット単結晶、および、その用途
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JP3193945B2 (ja) * 1995-03-17 2001-07-30 松下電器産業株式会社 磁気光学素子及び光磁界センサ
JP3667827B2 (ja) * 1995-08-29 2005-07-06 富士通株式会社 ファラデー回転子
JP3153452B2 (ja) * 1995-11-17 2001-04-09 松下電器産業株式会社 光磁界センサ
JPH09230013A (ja) * 1996-02-21 1997-09-05 Matsushita Electric Ind Co Ltd 光磁界センサプローブ及び磁気光学素子
JP3739471B2 (ja) * 1996-03-01 2006-01-25 富士通株式会社 光可変減衰器
JP3773601B2 (ja) * 1996-09-18 2006-05-10 富士通株式会社 ファラデー回転子
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US8289818B2 (en) 2008-12-31 2012-10-16 Infinitum Solutions, Inc. Magneto-optic write-head characterization using the recording medium as a transducer layer
US8659291B2 (en) * 2008-12-31 2014-02-25 Infinitum Solutions, Inc. Magneto-optical detection of a field produced by a sub-resolution magnetic structure
CN101458312B (zh) * 2009-01-04 2012-07-11 上海舜宇海逸光电技术有限公司 光纤磁光探测装置
US8427929B2 (en) 2010-09-08 2013-04-23 Infinitum Solutions, Inc. Sub-optical-resolution kerr signal detection for perpendicular write-head characterization
RU2692047C1 (ru) * 2018-02-14 2019-06-19 Акционерное общество "Научно-исследовательский институт материаловедения им. А.Ю. Малинина" Магнитооптический элемент и считывающее устройство с таким элементом
CN113124935B (zh) * 2021-04-21 2022-10-14 华北电力大学 一种油浸式变压器漏磁温度复合传感器及测量方法

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Also Published As

Publication number Publication date
DE69226394T2 (de) 1999-03-11
EP0510621A2 (en) 1992-10-28
JPH04324817A (ja) 1992-11-13
EP0510621A3 (en) 1993-12-08
EP0510621B1 (en) 1998-07-29
JPH0782164B2 (ja) 1995-09-06
KR970000907B1 (ko) 1997-01-21
US5212446A (en) 1993-05-18
DE69226394D1 (de) 1998-09-03

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