KR920019701A - 유기금속 전구체로부터 비산화물 모노리틱 세라믹을 제조하는 방법 - Google Patents

유기금속 전구체로부터 비산화물 모노리틱 세라믹을 제조하는 방법 Download PDF

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KR920019701A
KR920019701A KR1019920005713A KR920005713A KR920019701A KR 920019701 A KR920019701 A KR 920019701A KR 1019920005713 A KR1019920005713 A KR 1019920005713A KR 920005713 A KR920005713 A KR 920005713A KR 920019701 A KR920019701 A KR 920019701A
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precursor
infusible
powder
crosslinking
process according
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리이델 랄프
파씽 게르트
죤 브루크 리챠드
콜롱비에 크리스띠앙
고농 모리스
팡또지 질베르
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미셸 로셰
엘프 아토켐 에스. 에이.
원본미기재
막스-플랑크-인스티투트 퓌어 메탈포르슝
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Abstract

내용 없음

Description

유기금속 전구체로부터 비산화물 모노리틱 세라믹을 제조하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (16)

1) 불용성 세라믹 전구체(Pi)로부터 분말(P)을 제조하고; 2) 그 분말(P)을 성형한 다음; 3) 2)에서 형성된 제품을 열분해하여 모노리틱 세라믹 물질을 수득하는 단계로 구성됨을 특징으로 하는 모노리틱 비산화물 세라믹 물질의 제조방법.
제1항에 있어서, 두 번째 단계에서 분말은 성형 조건하에서 액체인 가융성 유기금속 전구체(Po)와의 혼합물로서 성형됨을 특징으로 하는 방법.
제2항에 있어서, 성형에 의해 얻어진 제품을 열분해 이전에 전구체(Po)의 가교를 가능케하는 조건하에 두는 것을 특징으로 하는 방법.
제1 내지 3항중 어느 한항에 있어서, 두 번째 단계 하에 성형시켜 얻어진 제품을 열분해 이전에 전구체(Po)로 함침 또는 재함침시키는 것을 특징으로 하는 방법.
제1 내지 제4항중 어느 한 항에 있어서, 불융성 전구체(Pi)가 전구체(Po)의 열적, 화학적 또는 물리적 가교로부터 수득됨을 특징으로 하는 방법.
제1 내지 제5항중 어느 한 항에 있어서, 불융성 전구체(Pi)가 그 제조도중 불융성 형태로 직접 수득된 전구체로부터 선택됨을 특징으로 하는 방법.
제1 내지 제6항중 어느 한 항에 있어서, 불융성 전구체(Pi) 또는 가융성 전구체(Po)가 중합체 쇄 내에 Al, B 또는 Si 및 C 또는 N, 또는 그의 혼합물을 함유하는 전구체들로부터 선택되는 것을 특징으로 하는 방법.
제7항에 있어서, 불융성 전구체(Pi) 또는 가융성 전구체(Po)가 폴리실라잔, 폴리실릴히드라진, 폴리실란 및 폴리카르보실란으로 구성되는 군에서 선택됨을 특징으로 하는 방법.
제5항에 있어서, 전구체(Po)가 가교가 실온 내지 750℃ 범위의 온도에서 열적, 물리적 또는 화학적 경로에 의해 수행됨을 특징으로 하는 방법.
제1 내지 제9항중 어느 한 항에 있어서, 분말(P)이 0.1~500㎛의 입자 크기를 갖는 것을 특징으로 하는 방법.
제2항에 있어서, 전구체(Po)의 양이 (Pi)+(Po) 혼합물 중량의 25% 이하를 나타냄을 특징으로 하는 방법.
제3항에 있어서, 전구체(Po)의 가교가 약 300℃~약 750℃의 온도로 가열함으로써 수득됨을 특징으로 하는 방법.
제1 내지 12항중 어느 한 항에 있어서, 열분해가 500~1200℃의 온도에서 수행됨을 특징으로 하는 방법.
다공도가 25% 이하이고 대부분의 세공이 100~500nm 정도의 직경을 갖는 것을 특징으로 하는, X-선에 무정형인 모노리틱 세라믹 제품.
제14항에 있어서, SiC 또는 Si3N4로 구성됨을 특징으로 하는 재퓸.
제14 또는 15항에 따르는 제품을 1300~1700℃에서 처리하여 수득되는 결정성 모노리틱 세라믹 제품.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920005713A 1991-04-05 1992-04-06 유기금속 전구체로부터 비산화물 모노리틱 세라믹을 제조하는 방법 KR970003455B1 (ko)

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FR9104167A FR2674846A1 (fr) 1991-04-05 1991-04-05 Procede de preparation de ceramiques monolithiques non oxydes a partir de precurseurs organometalliques.
FR9104167 1991-04-05

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KR970003455B1 KR970003455B1 (ko) 1997-03-18

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US (1) US5294574A (ko)
EP (1) EP0507678A3 (ko)
JP (1) JPH07133155A (ko)
KR (1) KR970003455B1 (ko)
CN (1) CN1069014A (ko)
CA (1) CA2065096A1 (ko)
FR (1) FR2674846A1 (ko)
IE (1) IE921081A1 (ko)

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DE19706028C1 (de) * 1997-02-17 1998-07-02 Bayer Ag Neue Carbodiimid-Polymere als Vorstufen für C/N- und B/C/N-Werkstoffe
US6458315B1 (en) * 1998-02-13 2002-10-01 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften E.V. Process for producing a Si/C/N ceramic body
US6891263B2 (en) * 2000-02-07 2005-05-10 Ibiden Co., Ltd. Ceramic substrate for a semiconductor production/inspection device
CN109293384B (zh) * 2018-10-31 2021-03-30 哈尔滨工业大学 一种制备高损伤容限的面内各向同性的硼化锆基超高温独石结构陶瓷的方法

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* Cited by examiner, † Cited by third party
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DE3504145A1 (de) * 1985-02-07 1986-08-07 Basf Ag, 6700 Ludwigshafen Neues verfahren zur herstellung hochfester und hochtemperaturbestaendiger keramischer formteile aus siliziumnitrid
US5145813A (en) * 1987-12-11 1992-09-08 Shin-Etsu Chemical Co., Ltd. Process for manufacturing organic silazane polymers and ceramics therefrom
KR890012910A (ko) * 1988-02-29 1989-09-20 원본미기재 질화 실리콘 기재의 세라믹으로 형성된 성형품 및 그의 제조방법
US5006492A (en) * 1988-05-12 1991-04-09 Ethyl Corporation Preceramic compositions and ceramic products
US5128286A (en) * 1989-06-20 1992-07-07 Tonen Corporation Boron-containing, silicon nitride-based ceramic shaped body

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FR2674846A1 (fr) 1992-10-09
US5294574A (en) 1994-03-15
JPH07133155A (ja) 1995-05-23
CA2065096A1 (fr) 1992-10-06
KR970003455B1 (ko) 1997-03-18
EP0507678A3 (en) 1993-04-21
IE921081A1 (en) 1992-10-07
CN1069014A (zh) 1993-02-17
EP0507678A2 (fr) 1992-10-07

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