KR920013710A - 게이트형 다이오드 누설을 감소시키기 위한 동적 랜덤 액세스 메모리의 제조방법 및 동적 메모리 저장 캐패시터 - Google Patents
게이트형 다이오드 누설을 감소시키기 위한 동적 랜덤 액세스 메모리의 제조방법 및 동적 메모리 저장 캐패시터 Download PDFInfo
- Publication number
- KR920013710A KR920013710A KR1019910022125A KR910022125A KR920013710A KR 920013710 A KR920013710 A KR 920013710A KR 1019910022125 A KR1019910022125 A KR 1019910022125A KR 910022125 A KR910022125 A KR 910022125A KR 920013710 A KR920013710 A KR 920013710A
- Authority
- KR
- South Korea
- Prior art keywords
- trench
- polysilicon
- layer
- storage
- forming
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title claims 9
- 230000005055 memory storage Effects 0.000 title claims 7
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 27
- 229920005591 polysilicon Polymers 0.000 claims 27
- 238000003860 storage Methods 0.000 claims 23
- 239000004065 semiconductor Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 16
- 239000000463 material Substances 0.000 claims 8
- 229910052785 arsenic Inorganic materials 0.000 claims 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 2
- 150000004767 nitrides Chemical class 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62267490A | 1990-12-05 | 1990-12-05 | |
| US622674 | 1990-12-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR920013710A true KR920013710A (ko) | 1992-07-29 |
Family
ID=24495068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910022125A KR920013710A (ko) | 1990-12-05 | 1991-12-04 | 게이트형 다이오드 누설을 감소시키기 위한 동적 랜덤 액세스 메모리의 제조방법 및 동적 메모리 저장 캐패시터 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH04299844A (ja) |
| KR (1) | KR920013710A (ja) |
-
1991
- 1991-12-04 KR KR1019910022125A patent/KR920013710A/ko not_active Application Discontinuation
- 1991-12-04 JP JP3320550A patent/JPH04299844A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04299844A (ja) | 1992-10-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR950021651A (ko) | 다이나믹 랜덤 액세스 메모리 셀 제조방법 | |
| KR970067886A (ko) | 깊은 트렌치 기초 dram용 저장 노드 제조 방법 | |
| KR960015920A (ko) | 절연체상 실리콘(soi) 트렌치 구조물 및 이의 제조 방법 | |
| US6255684B1 (en) | DRAM cell configuration and method for its production | |
| US5302844A (en) | Semiconductor device and method for manufacturing the same | |
| US6277697B1 (en) | Method to reduce inverse-narrow-width effect | |
| KR0151385B1 (ko) | 반도체 메모리 장치 및 그 제조방법 | |
| KR920013710A (ko) | 게이트형 다이오드 누설을 감소시키기 위한 동적 랜덤 액세스 메모리의 제조방법 및 동적 메모리 저장 캐패시터 | |
| US6306724B1 (en) | Method of forming a trench isolation structure in a stack trench capacitor fabrication process | |
| US5121175A (en) | Semiconductor device having a side wall film | |
| US6080622A (en) | Method for fabricating a DRAM cell capacitor including forming a conductive storage node by depositing and etching an insulative layer, filling with conductive material, and removing the insulative layer | |
| US5759891A (en) | Increased surface area capacitor via use of a novel reactive ion etch procedure | |
| KR940011804B1 (ko) | 디렘 셀 제조방법 | |
| JP2613077B2 (ja) | 半導体装置の製造方法 | |
| GB2336716A (en) | DRAM cell capacitor and method for fabricating thereof | |
| KR100369484B1 (ko) | 반도체 소자의 캐패시터 제조방법 | |
| US5923972A (en) | DRAM cell capacitor fabrication method | |
| KR0124576B1 (ko) | 반도체 메모리장치의 커패시터 및 이의 제조방법 | |
| KR950013899B1 (ko) | 디램셀의 개패시터 제조방법 | |
| KR100213980B1 (ko) | 디램의 캐패시터 형성방법 | |
| KR920007791B1 (ko) | Dram 셀의 스택캐패시터 제조방법 | |
| KR100294692B1 (ko) | 반도체 소자의 소자 격리층 및 그의 형성 방법 | |
| KR930006974B1 (ko) | 트랜치를 이용한 스택 커패시터의 제조방법 | |
| KR960013513B1 (ko) | 디램(dram)셀 커패시터 구조 | |
| KR0156096B1 (ko) | 트렌치-스택 디램 셀의 구조 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |