KR920010203B1 - Bipolar-cmos circuit - Google Patents

Bipolar-cmos circuit

Info

Publication number
KR920010203B1
KR920010203B1 KR8815073A KR880015073A KR920010203B1 KR 920010203 B1 KR920010203 B1 KR 920010203B1 KR 8815073 A KR8815073 A KR 8815073A KR 880015073 A KR880015073 A KR 880015073A KR 920010203 B1 KR920010203 B1 KR 920010203B1
Authority
KR
South Korea
Prior art keywords
bipolar
cmos circuit
cmos
circuit
Prior art date
Application number
KR8815073A
Other languages
English (en)
Other versions
KR890009004A (ko
Inventor
Isao Fukushi
Takihisa Muroi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR890009004A publication Critical patent/KR890009004A/ko
Application granted granted Critical
Publication of KR920010203B1 publication Critical patent/KR920010203B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00307—Modifications for increasing the reliability for protection in bipolar transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Engineering & Computer Science (AREA)
  • Computing Systems (AREA)
  • Ceramic Engineering (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
KR8815073A 1987-11-16 1988-11-16 Bipolar-cmos circuit KR920010203B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62288728A JPH01129451A (ja) 1987-11-16 1987-11-16 半導体装置
JP62-288728 1987-11-16

Publications (2)

Publication Number Publication Date
KR890009004A KR890009004A (ko) 1989-07-13
KR920010203B1 true KR920010203B1 (en) 1992-11-21

Family

ID=17733918

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8815073A KR920010203B1 (en) 1987-11-16 1988-11-16 Bipolar-cmos circuit

Country Status (5)

Country Link
US (1) US4890018A (ko)
EP (1) EP0316793B1 (ko)
JP (1) JPH01129451A (ko)
KR (1) KR920010203B1 (ko)
DE (1) DE3887457D1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02224415A (ja) * 1989-02-27 1990-09-06 Nec Corp ＢｉＣＭＯＳ論理回路
JPH0766958B2 (ja) * 1989-03-20 1995-07-19 株式会社東芝 静電保護回路
US5173623A (en) * 1989-05-15 1992-12-22 Texas Instruments Incorporated High performance BiCMOS logic circuits with full output voltage swing up to four predetermined voltage values
US4970414A (en) * 1989-07-07 1990-11-13 Silicon Connections Corporation TTL-level-output interface circuit
JP2546904B2 (ja) * 1990-01-31 1996-10-23 三菱電機株式会社 半導体論理回路
US5079447A (en) * 1990-03-20 1992-01-07 Integrated Device Technology BiCMOS gates with improved driver stages
US5105105A (en) * 1990-03-21 1992-04-14 Thunderbird Technologies, Inc. High speed logic and memory family using ring segment buffer
US5030853A (en) * 1990-03-21 1991-07-09 Thunderbird Technologies, Inc. High speed logic and memory family using ring segment buffer
JPH0440014A (ja) * 1990-06-05 1992-02-10 Mitsubishi Electric Corp 論理回路装置
US5153464A (en) * 1990-12-14 1992-10-06 Hewlett-Packard Company Bicmos tri-state output buffer
US5101120A (en) * 1991-05-16 1992-03-31 International Business Machines Corporation BiCMOS output driver
JP2533968Y2 (ja) * 1991-08-26 1997-04-30 日本軽金属株式会社 電磁波シールドパネルの連結構造
JP2712097B2 (ja) * 1992-07-27 1998-02-10 株式会社東芝 ＢｉＣＭＯＳ論理回路
US5399918A (en) * 1993-09-30 1995-03-21 Intel Corporation Large fan-in, dynamic, bicmos logic gate

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3665144A (en) * 1970-09-24 1972-05-23 Elox Inc Electrical discharge machining power supply with protective system for output switch failure
US4291319A (en) * 1976-05-19 1981-09-22 National Semiconductor Corporation Open base bipolar transistor protective device
JPS5574059U (ko) * 1978-11-15 1980-05-21
JPS59196625A (ja) * 1983-04-22 1984-11-08 Nec Corp 論理回路
JPH0693626B2 (ja) * 1983-07-25 1994-11-16 株式会社日立製作所 半導体集積回路装置
JPS60125015A (ja) * 1983-12-12 1985-07-04 Hitachi Ltd インバ−タ回路
JPH0616585B2 (ja) * 1983-12-16 1994-03-02 株式会社日立製作所 バツフア回路
JPS60141018A (ja) * 1983-12-28 1985-07-26 Nec Corp バイポ−ラ−ｃｍｏｓ混成集積回路
JPS60177723A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 出力回路
JPH0671067B2 (ja) * 1985-11-20 1994-09-07 株式会社日立製作所 半導体装置
JPS62102621A (ja) * 1985-10-29 1987-05-13 Nec Corp 論理回路
JPS62169520A (ja) * 1986-01-22 1987-07-25 Hitachi Ltd Ｌｓｉ
JPS62221219A (ja) * 1986-03-22 1987-09-29 Toshiba Corp 論理回路
JPS6388916A (ja) * 1986-10-01 1988-04-20 Nec Corp 半導体集積回路
US4839537A (en) * 1986-11-29 1989-06-13 Kabushiki Kaisha Toshiba BicMO logic circuit
JPS63193720A (ja) * 1987-02-06 1988-08-11 Toshiba Corp 論理回路
US4746817A (en) * 1987-03-16 1988-05-24 International Business Machines Corporation BIFET logic circuit
JPH0611111B2 (ja) * 1987-03-27 1994-02-09 株式会社東芝 ＢｉＭＯＳ論理回路
US4845385A (en) * 1988-06-21 1989-07-04 Silicon Connections Corporation BiCMOS logic circuits with reduced crowbar current

Also Published As

Publication number Publication date
DE3887457D1 (de) 1994-03-10
KR890009004A (ko) 1989-07-13
EP0316793A2 (en) 1989-05-24
EP0316793B1 (en) 1994-01-26
JPH01129451A (ja) 1989-05-22
EP0316793A3 (en) 1990-06-27
US4890018A (en) 1989-12-26

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Legal Events

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E902 Notification of reason for refusal
J2X1 Appeal (before the patent court)

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G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Payment date: 20031106

Year of fee payment: 12

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