KR920007340B1 - Manufacturing method of 3-4 compound material semiconductor crystal - Google Patents

Manufacturing method of 3-4 compound material semiconductor crystal Download PDF

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KR920007340B1
KR920007340B1 KR1019890020699A KR890020699A KR920007340B1 KR 920007340 B1 KR920007340 B1 KR 920007340B1 KR 1019890020699 A KR1019890020699 A KR 1019890020699A KR 890020699 A KR890020699 A KR 890020699A KR 920007340 B1 KR920007340 B1 KR 920007340B1
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gaas
single crystal
crystal
crystals
growth
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KR910013455A (en
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고한준
오명환
이호성
박기석
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금성전선 주식회사
홍종선
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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Abstract

The producing method of single crystal of III-V compound semiconductor using Horizontal Bridgman method is characterized by sloping the seed (5) by 6 degrees against axial direction to lower etchpit density (EPD) to 1000-5000 /cm2 and grow uniform and reproducible high quality single crystal of GaAs. In above process, the molten liquid of GaAs is solidified at 1238 deg.C, which is a melting point of GaAs.

Description

Ⅲ-V화합물 반도체 단결정의 제조방법Method for manufacturing III-V compound semiconductor single crystal

제1도는 단결정 제조장치내의 석영 보우트에 설치된 종결정의 반향을 나타내는 투시도.1 is a perspective view showing echoes of seed crystals installed in a quartz boat in a single crystal manufacturing apparatus.

제2도는 단결정 제조장치내의 석영 보우토에 설치된 종결정과 결정성장축과의 경사를 나타내는 개략도.FIG. 2 is a schematic diagram showing the inclination of seed crystals and crystal growth axes provided in the quartz bowto in the single crystal manufacturing apparatus. FIG.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : [211]방향 2 : [

Figure kpo00001
] 방향1: [211] direction 2: [
Figure kpo00001
] direction

3 : [100]방향 4 : 결정성장방향3: direction of [100] 4: direction of crystal growth

5 : 종결정 6 : [111]면5: seed crystal 6: [111] plane

본 발명은 Ⅲ-V 화합물 반도체 단결정의 제조방법에 있어서, 수평 브릿지만(Horizontal Bridgman)법을 사용하여 GaAs 단결정을 성장시킬때 종결정(seed)을 축방향에 6°어긋나게 설치하여 에치피트 밀도(EPD)를 1000-5000㎝-3이하로 낮추는 것에 관한 것이다.The present invention provides a method for manufacturing a III-V compound semiconductor single crystal, wherein seed crystals are placed 6 ° apart in the axial direction when growing GaAs single crystals using a horizontal bridgman method. EPD) to lower than 1000-5000 cm -3 .

일반적으로 GaAs 단결정을 제조하는 방법에는 수평 브릿지만 법 및 수평 경사 프리쯔법이 있는데, 두가지 방법 모두 석영 보우트(quartz boat)안에서 생성되는 GaAs 단결정이 일정 방향을 유지하도록 종결정을 설치하고, 다결정 GaAs 또는 순수한 Ga원소를 석영 보우트내에 수용하여 As원소 분위기하에서 GaAs 융점인 1238℃ 이상으로 가열한 후, 온도를 서서히 낮춤으로써 GaAs 단결정을 성장시키고 있다. 종래에는GaAs 융액과 종결정을 축방향과 동일직선에 위치시켜, GaAs 단결정이 융점인 1238℃에서 서서히 응고하는 과정에서 조밀평면(close packed pland)인[111]면으로 우선 성장하고, [111]면으로 성장한 층(layer)들이 쌓여 전체적으로 단결정 성장이 이루어지는 특징을 가지고 있다. 이러한 층의 성장은 가열로의 온도구배에 의해서 핵생성 위치가 불균일하게 일어났다.Generally, GaAs single crystals have a horizontal bridge-only method and a horizontal gradient Fritz method. Both methods provide seed crystals such that GaAs single crystals generated in a quartz boat maintain a certain direction, and polycrystalline GaAs or Pure Ga elements are housed in a quartz boat and heated to 1238 ° C or higher, which is the GaAs melting point, in an As element atmosphere, and then the temperature is gradually lowered to grow GaAs single crystals. Conventionally, the GaAs melt and seed crystals are placed in the same direction as the axial direction, and the GaAs single crystals first grow to the [111] plane, which is a close packed pland, in the course of slowly solidifying at the melting point of 1238 ° C. Layers grown in cotton are stacked to make single crystal growth as a whole. The growth of this layer caused the nucleation location to be uneven due to the temperature gradient of the furnace.

수평 브릿지만법 및 경사 프리쯔법을 사용하여 GaAs 단결정을 성장시킬때 고품위의 GaAs 단결정을 얻기 위해서는 GaAs 단결정이 저전위 밀도(low Dislocation Density)를 갖도록 해야한다. 이때 단결정의 품위는 전위(Dislocation)의 단위면적당 단결정 수량에 따라 결정된다.In order to obtain high quality GaAs single crystal when growing GaAs single crystal by using the horizontal bridgeman method and the gradient frit method, the GaAs single crystal must have a low dislocation density. The quality of the single crystal is determined according to the number of single crystals per unit area of dislocation.

저전위 밀도를 갖는 GaAs 단결정을 얻는 방법은 여러가지가 있는데, 본 발명에서는 가열로를 변형하거나 결정성장 변수를 변화시키지 않고 단지 GaAs를 담는 석영만의 종결정 부분만을 변형 가공시켰다.There are several ways to obtain a GaAs single crystal having a low dislocation density. In the present invention, only a seed crystal portion of quartz containing GaAs is modified without modifying a heating furnace or changing a crystal growth parameter.

즉, 종결정을 축방향에 대해 6°정도 어긋나게 설치하여 결과적으로 GaAs 융액이 GaAs 융점인 1238℃에서 서서히 응고하도록 하여, 생성되는 단결정을 축방향에 6°기울여 성장시킨다. 따라서 성장한 층들의 핵생성 위치를 고정시켜 안정된 결정성장을 이루게 하여 저전위 밀도를 갓는 GaAs 단결정을 성장시킬 수 있었다. 또한 에치피트 밀도(EPD)가 1000-5000㎝-2이하 수준으로 낮출 수 있었다.That is, the seed crystals are provided to be shifted by about 6 ° with respect to the axial direction, and as a result, the GaAs melt is gradually solidified at 1238 ° C, which is the GaAs melting point, and the resulting single crystal is grown by tilting 6 ° in the axial direction. Therefore, GaAs single crystals with low potential density could be grown by fixing the nucleation positions of the grown layers to achieve stable crystal growth. In addition, the etchpit density (EPD) could be lowered to a level of 1000-5000 cm -2 or less.

본 발명외 구성은 제1도 및 제2도에 도시한 바와같다.The configuration outside the present invention is as shown in FIG. 1 and FIG.

제1도에 도시한대로 종결정의 윗면(1)은[211]면으로 하고, 측면(3)은[110]면으로 하였으며 결정 성장이 일어나는 방향(4)은 [

Figure kpo00002
] 방향(2)으로 하였다. 제2도에서는 결정성장축(7)에 대해 종결정(5)을 6°기울임으로써 전체적인 GaAs 단결정의 성장면이 가열로의 등온선과 6°의 기울기를 갖게 되고 성장면의 핵생성은 A부분에서 균일하게 일어난다.As shown in FIG. 1, the top face 1 of the seed crystal is [211] plane, the side face 3 is [110] plane, and the direction in which crystal growth 4 occurs is [
Figure kpo00002
] Direction (2). In FIG. 2, the seed crystal 5 is tilted 6 ° with respect to the crystal growth axis 7 so that the entire growth plane of the GaAs single crystal has a slope of 6 ° with the isotherm of the furnace and the nucleation of the growth plane is uniform in the A portion. It happens.

그러나 각도를 6°이상 기울였을때 성장 초기인 쇼울더(shoulder) 부분에서 면결함인[111]쌍정(twin)이 발생하기 쉽고 또한 최종 반도체 소재용으로 공급되는[100]면의 웨이퍼 형태가 심하게 변형되어 단결정 내의 웨이퍼 수율저하가 일어난다. 또한 종결정을 본 발명에서 처럼 좌우로 기울이지 않고 상하로 기울여서 성장을 시킬때는 조성적 과냉(constitutional supercooling)에 의해 생성되는 패시트(facet)면과의 각도가 변화하여 패시트(facet) 성장이 억제되므로 전위밀도가 증대되는등 전체적인 GaAs 단결정특성을 저하시키므로 종결정을 상하로 기울이는 방법은 세심한 주의를 필요로 한다.However, when the angle is tilted more than 6 °, defects of defects [111] twin easily occur in the shoulder part, which is the beginning of growth, and the shape of the wafer on the [100] surface supplied for the final semiconductor material is severely deformed. As a result, wafer yield decreases in the single crystal. In addition, when growing seed crystals by tilting them up and down instead of right and left as in the present invention, the angle with the facet surface generated by constitutional supercooling is changed to suppress facet growth. Therefore, since the dislocation density increases, the overall GaAs single crystal characteristic is degraded, so the method of tilting the seed crystal up and down requires careful attention.

이하 본 발명의 실시예에 대해 설명하고자 한다.Hereinafter will be described an embodiment of the present invention.

[실시예]EXAMPLE

총 GaAs 양 700g을 모래분사(sand blast) 처리를 한 석영관내에 장입하고, 성장방향은 [

Figure kpo00003
]로 하며 종결정은 축방향에 6°기울인다. 결정의 성장은 기존의 이동방식을 갖는 전기로에서 2-7㎜/hr의 성장속도로 성장시키며, 석영관내 저온부(As부분) 온도는 635℃로 일정하게 유지시키고 성장과정 중 온도의 변화는 ±1℃ 이내로 하였다. 석영관내 고온부의 GaAs 융액은 1270℃를 넘기지 않도록 하였으며 1238℃에서 응고가 일어나도록 하였다.700 g of total GaAs was charged into a sand blasted quartz tube, and the growth direction was [
Figure kpo00003
] And the seed crystal tilts 6 ° in the axial direction. Crystal growth grows at a growth rate of 2-7mm / hr in a conventional electric furnace, and keeps the temperature of low temperature part (As part) at 635 ℃ and changes the temperature during the growth process ± 1. It was set within the temperature. The GaAs melt at high temperature in the quartz tube was not allowed to exceed 1270 ℃ and coagulation occurred at 1238 ℃.

이러한 실험결과, 에칭용액(H2So4: H2O2: H2O=3 : 1 : 1)으로 화학에칭(chemical etching)하여[100]면 웨이퍼의 전위밀도를 측정한 결과 EPD : 5000㎝-2, 보증면적(quaranted area) 80% 및 전위(Dislocation)가 전혀없는 부분이 약 10%인 2인치 D형 GaAs 단결정을 얻을 수 있었다.As a result of these experiments, the potential density of the [100] surface wafer was measured by chemical etching with an etching solution (H 2 So 4 : H 2 O 2 : H 2 O = 3: 1: 1). EPD: 5000 A 2-inch D-type GaAs single crystal having a cm -2 , a guaranteed area of 80%, and a dislocation-free portion of about 10% was obtained.

Claims (1)

수평 브릿지만법으로 GaAs 단결정을 성장시킴에 있어서, 종결정을 축방향에 6°기울여서 설치함으로써 GaAs 단결정내의 에치피트밀드(EPD)를 1000-5000㎝-2이하로 낮추어 결정성장을 균일하고 재현성 있게하여 고품위의 단결정을 성장시킴을 특징으로 하는 Ⅲ-V 화합물 반도체 단결정의 제조방법.In growing GaAs single crystals by the horizontal bridge only method, seed crystals are placed at an angle of 6 ° in the axial direction to lower the etchpit mill (EPD) in the GaAs single crystals to 1000-5000 cm -2 or less to make crystal growth uniform and reproducible A method for producing a III-V compound semiconductor single crystal characterized by growing a high quality single crystal.
KR1019890020699A 1989-12-31 1989-12-31 Manufacturing method of 3-4 compound material semiconductor crystal KR920007340B1 (en)

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