KR920005276A - Positive Slope Etching Method of Polycrystalline Silicon Film - Google Patents

Positive Slope Etching Method of Polycrystalline Silicon Film Download PDF

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Publication number
KR920005276A
KR920005276A KR1019900012461A KR900012461A KR920005276A KR 920005276 A KR920005276 A KR 920005276A KR 1019900012461 A KR1019900012461 A KR 1019900012461A KR 900012461 A KR900012461 A KR 900012461A KR 920005276 A KR920005276 A KR 920005276A
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KR
South Korea
Prior art keywords
polycrystalline silicon
silicon film
positive slope
etching method
slope etching
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Application number
KR1019900012461A
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Korean (ko)
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KR930004119B1 (en
Inventor
김상균
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문정환
금성일렉트론 주식회사
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Priority to KR1019900012461A priority Critical patent/KR930004119B1/en
Publication of KR920005276A publication Critical patent/KR920005276A/en
Application granted granted Critical
Publication of KR930004119B1 publication Critical patent/KR930004119B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음No content

Description

다결정실리콘막의 정경사 식각방법Positive Slope Etching Method of Polycrystalline Silicon Film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 공정단면도.2 is a cross-sectional view of the process of the present invention.

Claims (3)

육간전극형 반응성이온 식각(RIE)장비를 이용한 다결정실리콘막의 정경사 식각공정에 있어서, 식각가스로서 염화수소(Hcl)에 사염화 실리콘(Sicl4)가스가 첨가되어 사용됨을 특징으로 하는 다결정 실리콘막의 정경사 식각방법.Positive slope of the polycrystalline silicon film, characterized in that silicon tetrachloride (Sicl 4 ) gas is added to hydrogen chloride (Hcl) as an etching gas in the positive slope etching process of the interelectrode type reactive ion etching (RIE) equipment. Etching method. 제1항에 있어서, 염화수소(Hcl) 및 사염화실리콘(Sicl4) 가스의 사용량은 각각 20-100cc/분 및 10-150cc/분 임을 특징으로 하는 다결정 실리콘막의 정경사 식각방법.The method of claim 1, wherein the hydrogen chloride (Hcl) and silicon tetrachloride (Sicl 4 ) gases are used in amounts of 20-100 cc / min and 10-150 cc / min, respectively. 제1항에 있어서 다결정 실리콘막은 도우프된 것 또는 안된것 모두 사용될 수 있음을 특징으로 하는 다결정 실리콘막의 정경사 식각방법.The method of claim 1, wherein the polycrystalline silicon film can be used both doped or undoped. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900012461A 1990-08-13 1990-08-13 Positive decline etching method of poly-silicon film KR930004119B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900012461A KR930004119B1 (en) 1990-08-13 1990-08-13 Positive decline etching method of poly-silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900012461A KR930004119B1 (en) 1990-08-13 1990-08-13 Positive decline etching method of poly-silicon film

Publications (2)

Publication Number Publication Date
KR920005276A true KR920005276A (en) 1992-03-28
KR930004119B1 KR930004119B1 (en) 1993-05-20

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900012461A KR930004119B1 (en) 1990-08-13 1990-08-13 Positive decline etching method of poly-silicon film

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190038161A (en) * 2017-09-29 2019-04-08 주식회사 엘지화학 Copolycarbonate and method for preparing the same
KR20190095790A (en) * 2018-02-07 2019-08-16 주식회사 엘지화학 Copolycarbonate and method for preparing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190038161A (en) * 2017-09-29 2019-04-08 주식회사 엘지화학 Copolycarbonate and method for preparing the same
KR20190095790A (en) * 2018-02-07 2019-08-16 주식회사 엘지화학 Copolycarbonate and method for preparing the same
US11186682B2 (en) 2018-02-07 2021-11-30 Lg Chem, Ltd. Copolycarbonate and method for preparing the same

Also Published As

Publication number Publication date
KR930004119B1 (en) 1993-05-20

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