KR920003465A - Sidewall spacer formation method using thermal oxide film - Google Patents

Sidewall spacer formation method using thermal oxide film Download PDF

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Publication number
KR920003465A
KR920003465A KR1019900010427A KR900010427A KR920003465A KR 920003465 A KR920003465 A KR 920003465A KR 1019900010427 A KR1019900010427 A KR 1019900010427A KR 900010427 A KR900010427 A KR 900010427A KR 920003465 A KR920003465 A KR 920003465A
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KR
South Korea
Prior art keywords
oxide film
sidewall spacer
forming
thermal oxide
formation method
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Application number
KR1019900010427A
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Korean (ko)
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KR950005044B1 (en
Inventor
김홍선
허윤종
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019900010427A priority Critical patent/KR950005044B1/en
Publication of KR920003465A publication Critical patent/KR920003465A/en
Application granted granted Critical
Publication of KR950005044B1 publication Critical patent/KR950005044B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)

Abstract

내용 없음No content

Description

열적산화막을 이용한 측벽 스페이서 형성방법Sidewall spacer formation method using thermal oxide film

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 공정 단면도.2 is a cross-sectional view of the process of the present invention.

Claims (1)

게이트 산화층/다결정 실리콘층/LTO(또는 HTO)층을 차례로 형성하는 단계와, LTO(또는 HTO)층위에 원하는 게이트의 크기보다 조금 더 크게 한정하여 게이트를 형성하는 포토/에치 단계와, 형성된 게이트의 측면을 낮은 온도에서 열적으로 산화시켜 균등한 산화막을 형성하는 단계와, 열적 산화막을 수직에치하여 측벽 스에이서를 형성하는 단계로 이루어짐을 특징으로 하는 열적산화막을 이용한 측벽 스페이서 형성방법.Forming a gate oxide layer / polycrystalline silicon layer / LTO (or HTO) layer in sequence, forming a gate on the LTO (or HTO) layer by a little larger than the desired gate size, and forming a gate A method of forming a sidewall spacer using a thermally oxidized film comprising thermally oxidizing a side surface at a low temperature to form an even oxide film, and forming a sidewall spacer by vertically etching the thermal oxide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900010427A 1990-07-10 1990-07-10 Manufacturing method of side wall spacer using thermal oxide KR950005044B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900010427A KR950005044B1 (en) 1990-07-10 1990-07-10 Manufacturing method of side wall spacer using thermal oxide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900010427A KR950005044B1 (en) 1990-07-10 1990-07-10 Manufacturing method of side wall spacer using thermal oxide

Publications (2)

Publication Number Publication Date
KR920003465A true KR920003465A (en) 1992-02-29
KR950005044B1 KR950005044B1 (en) 1995-05-17

Family

ID=19301095

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900010427A KR950005044B1 (en) 1990-07-10 1990-07-10 Manufacturing method of side wall spacer using thermal oxide

Country Status (1)

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KR (1) KR950005044B1 (en)

Also Published As

Publication number Publication date
KR950005044B1 (en) 1995-05-17

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