KR970018183A - Method for Removing Native Oxide Film with lsotropic Etching Gas - Google Patents

Method for Removing Native Oxide Film with lsotropic Etching Gas Download PDF

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Publication number
KR970018183A
KR970018183A KR1019950031783A KR19950031783A KR970018183A KR 970018183 A KR970018183 A KR 970018183A KR 1019950031783 A KR1019950031783 A KR 1019950031783A KR 19950031783 A KR19950031783 A KR 19950031783A KR 970018183 A KR970018183 A KR 970018183A
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KR
South Korea
Prior art keywords
oxide film
native oxide
lsotropic
etching gas
polysilicon film
Prior art date
Application number
KR1019950031783A
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Korean (ko)
Inventor
김동현
남병윤
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031783A priority Critical patent/KR970018183A/en
Publication of KR970018183A publication Critical patent/KR970018183A/en

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Abstract

본 발명은 반도체 제조공정중 폴리실리콘막형성공정에서 폴리실리콘막이 도포된 후 대기에 노출된 경우 대기중의 산소와 폴리 실리콘막이 결합하여 형성되는 자연산화막을 등방성 식각 특성을 갖는 Cl2/SF6Gas Plasma를 사용하여 단차를 갖는 폴리실리콘의 상면 및 측벽에 형성된 자연산화막을 효과적으로 제거하여 줌으로써, 종래의 이방성, CF4가스 플라즈마 사용시 폴리실리콘막의 측벽에 잔류물이 남게 되는 것을 방지할 수 있다.The present invention is Cl 2 / SF 6 Gas having an isotropic etching characteristic of the natural oxide film formed by the combination of oxygen and polysilicon film in the air when exposed to the atmosphere after the polysilicon film is applied in the polysilicon film forming process of the semiconductor manufacturing process By effectively removing the natural oxide film formed on the upper surface and the sidewall of the polysilicon having a step using the plasma, it is possible to prevent the residue on the sidewall of the polysilicon film when using the conventional anisotropic, CF 4 gas plasma.

Description

등방성(Isotropic) 식각가스를 이용한 자연산화막 제거방법(Method for Removing Native Oxide Film with Isotropic Etching Gas)Method for Removing Native Oxide Film with Isotropic Etching Gas

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도(A)와 (B)는 본 발명의 실시예에 따라서, 단차를 갖는 반도체기판에 도포된 폴리실리콘막에 형성된 자연산화막의 제거공정도.3A and 3B are process charts for removing a natural oxide film formed on a polysilicon film coated on a semiconductor substrate having a step according to an embodiment of the present invention.

Claims (1)

단차를 갖는 반도체기판상의 폴리실리콘막상에 형성된 자연산화막을 측면 시각 경향이 큰 Cl2/SF6플라즈마를 이용하여 제거하는 것을 특징으로 하는 자연산화막 제거방법.A method of removing a native oxide film, wherein the native oxide film formed on a polysilicon film on a semiconductor substrate having a step difference is removed by using a Cl 2 / SF 6 plasma having a large lateral viewing tendency. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031783A 1995-09-26 1995-09-26 Method for Removing Native Oxide Film with lsotropic Etching Gas KR970018183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031783A KR970018183A (en) 1995-09-26 1995-09-26 Method for Removing Native Oxide Film with lsotropic Etching Gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031783A KR970018183A (en) 1995-09-26 1995-09-26 Method for Removing Native Oxide Film with lsotropic Etching Gas

Publications (1)

Publication Number Publication Date
KR970018183A true KR970018183A (en) 1997-04-30

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ID=66616365

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031783A KR970018183A (en) 1995-09-26 1995-09-26 Method for Removing Native Oxide Film with lsotropic Etching Gas

Country Status (1)

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KR (1) KR970018183A (en)

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