KR970018183A - Method for Removing Native Oxide Film with lsotropic Etching Gas - Google Patents
Method for Removing Native Oxide Film with lsotropic Etching Gas Download PDFInfo
- Publication number
- KR970018183A KR970018183A KR1019950031783A KR19950031783A KR970018183A KR 970018183 A KR970018183 A KR 970018183A KR 1019950031783 A KR1019950031783 A KR 1019950031783A KR 19950031783 A KR19950031783 A KR 19950031783A KR 970018183 A KR970018183 A KR 970018183A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- native oxide
- lsotropic
- etching gas
- polysilicon film
- Prior art date
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- Drying Of Semiconductors (AREA)
Abstract
본 발명은 반도체 제조공정중 폴리실리콘막형성공정에서 폴리실리콘막이 도포된 후 대기에 노출된 경우 대기중의 산소와 폴리 실리콘막이 결합하여 형성되는 자연산화막을 등방성 식각 특성을 갖는 Cl2/SF6Gas Plasma를 사용하여 단차를 갖는 폴리실리콘의 상면 및 측벽에 형성된 자연산화막을 효과적으로 제거하여 줌으로써, 종래의 이방성, CF4가스 플라즈마 사용시 폴리실리콘막의 측벽에 잔류물이 남게 되는 것을 방지할 수 있다.The present invention is Cl 2 / SF 6 Gas having an isotropic etching characteristic of the natural oxide film formed by the combination of oxygen and polysilicon film in the air when exposed to the atmosphere after the polysilicon film is applied in the polysilicon film forming process of the semiconductor manufacturing process By effectively removing the natural oxide film formed on the upper surface and the sidewall of the polysilicon having a step using the plasma, it is possible to prevent the residue on the sidewall of the polysilicon film when using the conventional anisotropic, CF 4 gas plasma.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도(A)와 (B)는 본 발명의 실시예에 따라서, 단차를 갖는 반도체기판에 도포된 폴리실리콘막에 형성된 자연산화막의 제거공정도.3A and 3B are process charts for removing a natural oxide film formed on a polysilicon film coated on a semiconductor substrate having a step according to an embodiment of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031783A KR970018183A (en) | 1995-09-26 | 1995-09-26 | Method for Removing Native Oxide Film with lsotropic Etching Gas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950031783A KR970018183A (en) | 1995-09-26 | 1995-09-26 | Method for Removing Native Oxide Film with lsotropic Etching Gas |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970018183A true KR970018183A (en) | 1997-04-30 |
Family
ID=66616365
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950031783A KR970018183A (en) | 1995-09-26 | 1995-09-26 | Method for Removing Native Oxide Film with lsotropic Etching Gas |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970018183A (en) |
-
1995
- 1995-09-26 KR KR1019950031783A patent/KR970018183A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |