KR970052728A - Polysilicon Film Etching Method - Google Patents

Polysilicon Film Etching Method Download PDF

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Publication number
KR970052728A
KR970052728A KR1019950050899A KR19950050899A KR970052728A KR 970052728 A KR970052728 A KR 970052728A KR 1019950050899 A KR1019950050899 A KR 1019950050899A KR 19950050899 A KR19950050899 A KR 19950050899A KR 970052728 A KR970052728 A KR 970052728A
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KR
South Korea
Prior art keywords
polysilicon film
etching
etching method
polysilicon
film etching
Prior art date
Application number
KR1019950050899A
Other languages
Korean (ko)
Inventor
신기수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050899A priority Critical patent/KR970052728A/en
Publication of KR970052728A publication Critical patent/KR970052728A/en

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Abstract

본 발명은 폴리실리콘 위의 자연산화막이나 오염물질을 식각할 때 종래의 폴로린(Fluorine)가스가 아닌 폴리실리콘막 에천트인 클로린 가스를 사용하는 것으로, 장비의 오염을 방지하고 최적의 식각 특성을 확보할 수 있어, 고집적 소자에서 0.25㎛이하의 선폭을 갖는 폴리실리콘막 패턴을 형성할 수 있는 효과가 있다.The present invention uses chlorine gas, which is a polysilicon film etchant, rather than a conventional fluorine gas when etching a natural oxide film or contaminants on polysilicon, thereby preventing contamination of equipment and ensuring optimal etching characteristics. It is possible to form a polysilicon film pattern having a line width of 0.25 탆 or less in the highly integrated device.

Description

폴리실리콘막 식각방법Polysilicon Film Etching Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1C도는 본 발명의 일실시예에 따른 폴리실리콘막 식각 공정도.1A to 1C are polysilicon film etching process diagrams according to an embodiment of the present invention.

Claims (1)

폴리실리콘막 표면에 성장한 자연산화막을 식각하는 단계(break through step) 및 폴리실리콘막을 식각하는 주 식각 단계가도일 장비에서 이루어지는 폴리실리콘막 식각방법에 있어서; 상기 자연산화막을 식각하는 단계에서 폴리실리콘막 에천트를 사용하된 공정조건을 바이어스 파워가 100W이상이며, 소오스파워가 300W이하이며 압력이 3mTorr이하인 것을 특징으로 하는 폴리실리콘막 식각방법.A polysilicon film etching method comprising etching a natural oxide film grown on a polysilicon film surface (break through step) and a main etching step of etching a polysilicon film in a domestic equipment; Process conditions using the polysilicon film etchant in the step of etching the natural oxide film polysilicon film etching method characterized in that the bias power is more than 100W, the source power is less than 300W and the pressure is less than 3mTorr. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050899A 1995-12-16 1995-12-16 Polysilicon Film Etching Method KR970052728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050899A KR970052728A (en) 1995-12-16 1995-12-16 Polysilicon Film Etching Method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050899A KR970052728A (en) 1995-12-16 1995-12-16 Polysilicon Film Etching Method

Publications (1)

Publication Number Publication Date
KR970052728A true KR970052728A (en) 1997-07-29

Family

ID=66595042

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950050899A KR970052728A (en) 1995-12-16 1995-12-16 Polysilicon Film Etching Method

Country Status (1)

Country Link
KR (1) KR970052728A (en)

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