KR970052728A - Polysilicon Film Etching Method - Google Patents
Polysilicon Film Etching Method Download PDFInfo
- Publication number
- KR970052728A KR970052728A KR1019950050899A KR19950050899A KR970052728A KR 970052728 A KR970052728 A KR 970052728A KR 1019950050899 A KR1019950050899 A KR 1019950050899A KR 19950050899 A KR19950050899 A KR 19950050899A KR 970052728 A KR970052728 A KR 970052728A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon film
- etching
- etching method
- polysilicon
- film etching
- Prior art date
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- Drying Of Semiconductors (AREA)
Abstract
본 발명은 폴리실리콘 위의 자연산화막이나 오염물질을 식각할 때 종래의 폴로린(Fluorine)가스가 아닌 폴리실리콘막 에천트인 클로린 가스를 사용하는 것으로, 장비의 오염을 방지하고 최적의 식각 특성을 확보할 수 있어, 고집적 소자에서 0.25㎛이하의 선폭을 갖는 폴리실리콘막 패턴을 형성할 수 있는 효과가 있다.The present invention uses chlorine gas, which is a polysilicon film etchant, rather than a conventional fluorine gas when etching a natural oxide film or contaminants on polysilicon, thereby preventing contamination of equipment and ensuring optimal etching characteristics. It is possible to form a polysilicon film pattern having a line width of 0.25 탆 or less in the highly integrated device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1A도 내지 제1C도는 본 발명의 일실시예에 따른 폴리실리콘막 식각 공정도.1A to 1C are polysilicon film etching process diagrams according to an embodiment of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050899A KR970052728A (en) | 1995-12-16 | 1995-12-16 | Polysilicon Film Etching Method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950050899A KR970052728A (en) | 1995-12-16 | 1995-12-16 | Polysilicon Film Etching Method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052728A true KR970052728A (en) | 1997-07-29 |
Family
ID=66595042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950050899A KR970052728A (en) | 1995-12-16 | 1995-12-16 | Polysilicon Film Etching Method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052728A (en) |
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1995
- 1995-12-16 KR KR1019950050899A patent/KR970052728A/en not_active Application Discontinuation
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