KR970053119A - Chamber cleaning method of dry etching equipment - Google Patents

Chamber cleaning method of dry etching equipment Download PDF

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Publication number
KR970053119A
KR970053119A KR1019950057141A KR19950057141A KR970053119A KR 970053119 A KR970053119 A KR 970053119A KR 1019950057141 A KR1019950057141 A KR 1019950057141A KR 19950057141 A KR19950057141 A KR 19950057141A KR 970053119 A KR970053119 A KR 970053119A
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KR
South Korea
Prior art keywords
cleaning method
chamber
dry etching
plasma
oxygen gas
Prior art date
Application number
KR1019950057141A
Other languages
Korean (ko)
Inventor
서강일
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950057141A priority Critical patent/KR970053119A/en
Publication of KR970053119A publication Critical patent/KR970053119A/en

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Abstract

플라즈마를 이용한 건식식각 장비의 챔버 세정방법에 관하여 개시한다. 본 발명은 반도체 소자의 제조시 사용되는 건식식각 장비의 챔버 세정방법에 있어서, 상기 챔버 내부에 성장한 폴리머층을 플라즈마를 이용하여 세정하는 것을 특징으로 하는 건식식각 장비의 챔버 세정방법을 제공한다. 상기 플라즈마의 소스로 산소 가스를 사용하거나 산소가스에 CF4,CHF3 및 Ar을 혼합하되 산소가스의 비율이 전체 가스량의 50% 이상으로 조절한다. 본 발명에 의하면, 챔버에 성장된 폴리머층을 산소 플라즈마를 이용하여 효과적으로 제거할 수 있다.A chamber cleaning method of a dry etching apparatus using plasma is disclosed. The present invention provides a chamber cleaning method of a dry etching apparatus for cleaning a semiconductor device used in the manufacture of a semiconductor device, wherein the polymer layer grown inside the chamber is cleaned using plasma. Oxygen gas is used as the source of the plasma or CF4, CHF3 and Ar are mixed with the oxygen gas, but the ratio of the oxygen gas is adjusted to 50% or more of the total gas amount. According to the present invention, the polymer layer grown in the chamber can be effectively removed using oxygen plasma.

Description

건식식각 장비의 챔버 세정방법Chamber cleaning method of dry etching equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명에 의한 건식세정의 효과를 나타낸 그래프이다.2 is a graph showing the effect of dry cleaning according to the present invention.

Claims (2)

반도체 소자의 제조에 사용되는 건식식각 장비의 챔버 세정방법에 있어서, 상기 챔버 내부에 성장한 폴리머층을 플라즈마를 이용하여 세정하는 것을 특징으로 하는 건식식각 장비의 챔버 세정방법.A chamber cleaning method of a dry etching equipment used in the manufacture of a semiconductor device, the chamber cleaning method of a dry etching equipment, characterized in that for cleaning the polymer layer grown in the chamber using a plasma. 제1항에 있어서, 상기 플라즈마의 소스로 산소 가스를 사용하거나 산소가스에 CF4,CHF3 및 Ar을 혼합하되 산소가스의 비율이 전체 가스량의 50% 이상으로 조절하는 것을 특징으로 하는 건식식각 장비의 챔버 세정 방법.The chamber of claim 1, wherein oxygen gas is used as the source of the plasma or CF 4, CHF 3, and Ar are mixed with the oxygen gas, but the ratio of the oxygen gas is controlled to 50% or more of the total gas amount. Cleaning method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950057141A 1995-12-26 1995-12-26 Chamber cleaning method of dry etching equipment KR970053119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950057141A KR970053119A (en) 1995-12-26 1995-12-26 Chamber cleaning method of dry etching equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950057141A KR970053119A (en) 1995-12-26 1995-12-26 Chamber cleaning method of dry etching equipment

Publications (1)

Publication Number Publication Date
KR970053119A true KR970053119A (en) 1997-07-29

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ID=66619009

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950057141A KR970053119A (en) 1995-12-26 1995-12-26 Chamber cleaning method of dry etching equipment

Country Status (1)

Country Link
KR (1) KR970053119A (en)

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