KR920005153B1 - Prom having the structure of bi cmos - Google Patents

Prom having the structure of bi cmos

Info

Publication number
KR920005153B1
KR920005153B1 KR8912332A KR890012332A KR920005153B1 KR 920005153 B1 KR920005153 B1 KR 920005153B1 KR 8912332 A KR8912332 A KR 8912332A KR 890012332 A KR890012332 A KR 890012332A KR 920005153 B1 KR920005153 B1 KR 920005153B1
Authority
KR
South Korea
Prior art keywords
prom
cmos
Prior art date
Application number
KR8912332A
Other languages
English (en)
Other versions
KR900003902A (ko
Inventor
Yasuroo Matsujaki
Yuuji Suchimido
Yoshigazu Muto
Masaki Dakahashi
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR900003902A publication Critical patent/KR900003902A/ko
Application granted granted Critical
Publication of KR920005153B1 publication Critical patent/KR920005153B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
KR8912332A 1988-08-30 1989-08-29 Prom having the structure of bi cmos KR920005153B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63216064A JPH0264997A (ja) 1988-08-30 1988-08-30 半導体記憶装置
JP63-216064 1988-08-30

Publications (2)

Publication Number Publication Date
KR900003902A KR900003902A (ko) 1990-03-27
KR920005153B1 true KR920005153B1 (en) 1992-06-27

Family

ID=16682710

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8912332A KR920005153B1 (en) 1988-08-30 1989-08-29 Prom having the structure of bi cmos

Country Status (3)

Country Link
EP (1) EP0357503A3 (ko)
JP (1) JPH0264997A (ko)
KR (1) KR920005153B1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0780718B2 (ja) * 1989-08-04 1995-08-30 トヨタ自動車株式会社 ダイヤモンドの合成方法および合成装置
DE69124849T2 (de) * 1990-06-29 1997-06-12 Texas Instruments Inc Elektrisch löschbare, elektrisch programmierbare Festwertspeicherzelle mit wählbarer Schwellspannung und Verfahren zu ihrer Verwendung
JP2723695B2 (ja) * 1991-07-02 1998-03-09 シャープ株式会社 半導体記憶装置
ES2372196B1 (es) * 2010-06-25 2012-12-14 Primo Mendoza, S.L. Producto alimenticio a base de miel.

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846797B2 (ja) * 1982-04-09 1983-10-18 株式会社東芝 半導体メモリ
JPS61190787A (ja) * 1985-02-20 1986-08-25 Hitachi Ltd スタテイツク型ｒａｍ
US4722822A (en) * 1985-11-27 1988-02-02 Advanced Micro Devices, Inc. Column-current multiplexing driver circuit for high density proms

Also Published As

Publication number Publication date
EP0357503A3 (en) 1992-01-29
EP0357503A2 (en) 1990-03-07
KR900003902A (ko) 1990-03-27
JPH0264997A (ja) 1990-03-05

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
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Payment date: 19960627

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee