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Priority to KR1019900010598ApriorityCriticalpatent/KR920003560A/en
Publication of KR920003560ApublicationCriticalpatent/KR920003560A/en
Insulated Gate Type Field-Effect Transistor
(AREA)
Weting
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Abstract
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Description
모스트랜지스터의 오토도핑에 의한 N+S/D형성 방법N + S / D formation method by auto doping of morph transistor
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 본 발명의 N+S/D형성 공정을 나타낸 단면도.1 is a cross-sectional view showing an N + S / D forming process of the present invention.
제2도는 본 발명의 N+S/D형성 후의 평면도다.2 is a plan view after N + S / D formation of the present invention.
Claims (2)
기판 위에 산화막, N+S/D가 될 폴리를 증착한 후 이 폴리 위에 이온을 주입하는 공정과, 상기 N+S/D 폴리를 마스크로하여 이 N+S/D폴리를 선택적으로 식각하고 산화막을 식각하는 공정과, 도핑되지 않은 폴리를 증착하여 N+S/D폴리 측면에만 폴리가 남도록 식각하는 공정과, 기판에 오토도핑시켜 이 기판에 형성되는 도핑농도가 N+S/D폴리에 형성된 도핑농도 보다 낮게 형성하는 공정을 순차적으로 실시함을 특징으로 하는 모스트랜지스터의 오토도핑에 의한 N+S/D형성 방법.After depositing the oxide film, N + S / D poly be on the substrate selectively etching the N + S / D poly subject to the step of implanting ion on the pulley, the N + S / D Poly as a mask and oxide film depositing step, a non-doped poly to etch the N + S / D poly side only poly remain in step, the substrate for etching the doping concentration formed on the substrate by the auto doping formed in the N + S / D poly A method of forming an N + S / D by autodoping a MOS transistor, characterized in that the step of forming a lower than the doping concentration is performed sequentially.제1항에 있어서, N+대신 P+를 주입함을 특징으로 하는 모스트랜지스터의 오토도핑에 의한 N+S/D형성 방법.The method of claim 1, wherein, instead of the N + N + S / D method is formed by auto-doping of the MOS transistor, characterized in that the P + implantation.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900010598A1990-07-121990-07-12
Method of forming N + S / D by auto doping of morph transistor
KR920003560A
(en)