KR920002673B1 - Source voltage-up detection circuit - Google Patents

Source voltage-up detection circuit

Info

Publication number
KR920002673B1
KR920002673B1 KR8903204A KR890003204A KR920002673B1 KR 920002673 B1 KR920002673 B1 KR 920002673B1 KR 8903204 A KR8903204 A KR 8903204A KR 890003204 A KR890003204 A KR 890003204A KR 920002673 B1 KR920002673 B1 KR 920002673B1
Authority
KR
South Korea
Prior art keywords
detection circuit
source voltage
voltage
source
detection
Prior art date
Application number
KR8903204A
Other languages
English (en)
Other versions
KR890015507A (ko
Inventor
Masanobu Yoshida
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of KR890015507A publication Critical patent/KR890015507A/ko
Application granted granted Critical
Publication of KR920002673B1 publication Critical patent/KR920002673B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/223—Modifications for ensuring a predetermined initial state when the supply voltage has been applied in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6878—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using multi-gate field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
KR8903204A 1988-03-16 1989-03-15 Source voltage-up detection circuit KR920002673B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63060214A JP2578465B2 (ja) 1988-03-16 1988-03-16 パルス信号発生回路
JP63-60214 1988-03-16

Publications (2)

Publication Number Publication Date
KR890015507A KR890015507A (ko) 1989-10-30
KR920002673B1 true KR920002673B1 (en) 1992-03-31

Family

ID=13135685

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8903204A KR920002673B1 (en) 1988-03-16 1989-03-15 Source voltage-up detection circuit

Country Status (5)

Country Link
US (1) US5017803A (ko)
EP (1) EP0333405B1 (ko)
JP (1) JP2578465B2 (ko)
KR (1) KR920002673B1 (ko)
DE (1) DE68922766T2 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239500A (en) * 1989-09-29 1993-08-24 Centre Suisse D'electronique Et De Microtechnique S.A. Process of storing analog quantities and device for the implementation thereof
JP3059737B2 (ja) * 1989-12-25 2000-07-04 シャープ株式会社 半導体記憶装置
JPH0474015A (ja) * 1990-07-13 1992-03-09 Mitsubishi Electric Corp 半導体集積回路装置
US5248907A (en) * 1992-02-18 1993-09-28 Samsung Semiconductor, Inc. Output buffer with controlled output level
FR2691289A1 (fr) * 1992-05-15 1993-11-19 Thomson Csf Dispositif semiconducteur à effet de champ, procédé de réalisation et application à un dispositif à commande matricielle.
EP0596637A1 (en) * 1992-11-02 1994-05-11 STMicroelectronics, Inc. Input buffer circuit
EP0700159A1 (en) * 1994-08-31 1996-03-06 STMicroelectronics S.r.l. Threshold detection circuit
JP3409938B2 (ja) * 1995-03-02 2003-05-26 株式会社東芝 パワーオンリセット回路
US5555166A (en) * 1995-06-06 1996-09-10 Micron Technology, Inc. Self-timing power-up circuit
DE10146831B4 (de) * 2001-09-24 2006-06-22 Atmel Germany Gmbh Verfahren zur Erzeugung eines zeitlich begrenzten Signals
JP3597501B2 (ja) * 2001-11-20 2004-12-08 松下電器産業株式会社 半導体集積回路
SE526731C2 (sv) * 2003-10-30 2005-11-01 Infineon Technologies Ag Uppstartningsövervakningskrets
US7944769B1 (en) * 2009-10-14 2011-05-17 Xilinx, Inc. System for power-on detection
US8432727B2 (en) * 2010-04-29 2013-04-30 Qualcomm Incorporated Invalid write prevention for STT-MRAM array
KR102409970B1 (ko) * 2015-11-18 2022-06-17 삼성디스플레이 주식회사 스캔라인 드라이버 및 이를 포함하는 디스플레이 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4245165A (en) * 1978-11-29 1981-01-13 International Business Machines Corporation Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control
JPS6197576A (ja) * 1984-10-19 1986-05-16 Toshiba Corp 高電位検知回路
JPH07105704B2 (ja) * 1985-08-12 1995-11-13 松下電器産業株式会社 電圧検出回路
US4742492A (en) * 1985-09-27 1988-05-03 Texas Instruments Incorporated EEPROM memory cell having improved breakdown characteristics and driving circuitry therefor

Also Published As

Publication number Publication date
EP0333405A2 (en) 1989-09-20
KR890015507A (ko) 1989-10-30
EP0333405B1 (en) 1995-05-24
DE68922766D1 (de) 1995-06-29
JP2578465B2 (ja) 1997-02-05
DE68922766T2 (de) 1995-09-28
EP0333405A3 (en) 1991-01-09
JPH01235412A (ja) 1989-09-20
US5017803A (en) 1991-05-21

Similar Documents

Publication Publication Date Title
EP0325029A3 (en) Dowhole orbital seismic source
GB2211042B (en) Detector circuit
KR0139545B1 (en) Amplifier circuit
GB8910574D0 (en) Seismic source
KR920002673B1 (en) Source voltage-up detection circuit
GB2221814B (en) Motion detection circuits
GB2227862B (en) An operations processor
GB8817256D0 (en) Hydrophone
GB2217095B (en) Drop-out detection circuits
GB2221294B (en) Detection circuitry
GB2219162B (en) Amplifier circuit
GB8908909D0 (en) Amplifier circuit
GB2214645B (en) Range-selecting circuit
GB2214334B (en) Integrated circuit
KR960009138B1 (en) Detecting circuit
ZA89653B (en) Detection devices
GB8715390D0 (en) Radiation source detection
GB8827071D0 (en) Amplifier circuit
GB2226724B (en) Multisound detection circuit
GB8814657D0 (en) Integrated circuit
GB8813459D0 (en) Fog detection unit
HUT55572A (en) Continous current source
GB8814562D0 (en) Detection
GB2219437B (en) Circuit arrangements
GB8827545D0 (en) Circuits

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030320

Year of fee payment: 12

LAPS Lapse due to unpaid annual fee