KR910020732A - 의사 스태틱 ram의 제어회로 - Google Patents
의사 스태틱 ram의 제어회로 Download PDFInfo
- Publication number
- KR910020732A KR910020732A KR1019910008047A KR910008047A KR910020732A KR 910020732 A KR910020732 A KR 910020732A KR 1019910008047 A KR1019910008047 A KR 1019910008047A KR 910008047 A KR910008047 A KR 910008047A KR 910020732 A KR910020732 A KR 910020732A
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- control
- control circuit
- control signal
- static ram
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
- G11C11/40615—Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 구성을 도시해 놓은 회로도, 제3도는 제1도의 회로동작을 설명하기 위한 타이밍챠트, 제4도는 CS대기모드를 설명하기 위한 타이밍챠트.
Claims (1)
- 칩이네이블신호가 공급되고, 이 칩이네이블신호의 의 레벨변화에 동기해서 침선택신호를 래치하기 위해 이용되는 제1제어신호군을 발생시키는 제1제어회로(1)와, 칩선택신호(CS) 및 상기 제1제어신호군이 공급되고, 이 제1제어신호군에 근거해서 칩선택신호를 래치하며, 이 래치신호에 따른 제2제어신호를 발생시키는 제2제어회로(2) 및, 기록네이블신호및 상기 제1제어신호군의 일부신호와 상기 제2제어신호가 공급되고, 제1제어신호군의 일부신호와 상기 제2제어신호에 따라서 기록이네이블신호의 제어를 행하여, 내부에서 사용되는 데이터기록제어용 제3제어신호를 발생시키는 제3제어회로(3)를 구비하여 구성된 것을 특징으로 하는 의사 스태틱 RAM의 제어회로.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2-130893 | 1990-05-21 | ||
JP2130893A JP2744115B2 (ja) | 1990-05-21 | 1990-05-21 | 疑似スタティックramの制御回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910020732A true KR910020732A (ko) | 1991-12-20 |
KR950007141B1 KR950007141B1 (ko) | 1995-06-30 |
Family
ID=15045179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910008047A KR950007141B1 (ko) | 1990-05-21 | 1991-05-17 | 의사 스태틱 ram의 제어회로 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5301164A (ko) |
EP (1) | EP0458213B1 (ko) |
JP (1) | JP2744115B2 (ko) |
KR (1) | KR950007141B1 (ko) |
DE (1) | DE69116426T2 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5617551A (en) * | 1992-09-18 | 1997-04-01 | New Media Corporation | Controller for refreshing a PSRAM using individual automatic refresh cycles |
US5590088A (en) * | 1993-07-13 | 1996-12-31 | Seiko Epson Corporation | Semiconductor memory device with enable signal conversion circuit operative for reducing current consumption |
KR0119886B1 (ko) * | 1994-07-27 | 1997-10-17 | 김광호 | 반도체 메모리 장치의 모드설정회로 및 그 방법 |
US5657293A (en) * | 1995-08-23 | 1997-08-12 | Micron Technology, Inc. | Integrated circuit memory with back end mode disable |
KR100431303B1 (ko) | 2002-06-28 | 2004-05-12 | 주식회사 하이닉스반도체 | 페이지 기록 모드를 수행할 수 있는 슈도 스태틱램 |
CN1310299C (zh) * | 2003-05-21 | 2007-04-11 | 中国科学院计算技术研究所 | 基于电路静态时延特性的冒险检测和消除方法 |
US6985385B2 (en) * | 2003-08-26 | 2006-01-10 | Grandis, Inc. | Magnetic memory element utilizing spin transfer switching and storing multiple bits |
KR100695512B1 (ko) | 2005-06-30 | 2007-03-15 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 |
US10332586B1 (en) | 2017-12-19 | 2019-06-25 | Micron Technology, Inc. | Apparatuses and methods for subrow addressing |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6052513B2 (ja) * | 1981-12-02 | 1985-11-19 | 富士通株式会社 | 半導体記憶装置 |
US4710903A (en) * | 1986-03-31 | 1987-12-01 | Wang Laboratories, Inc. | Pseudo-static memory subsystem |
JPH0644393B2 (ja) * | 1986-04-08 | 1994-06-08 | 日本電気株式会社 | 半導体メモリ |
JPS63166093A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | 半導体メモリの制御回路 |
JP2569033B2 (ja) * | 1987-01-16 | 1997-01-08 | 株式会社日立製作所 | 半導体記憶装置 |
JP2585602B2 (ja) * | 1987-06-10 | 1997-02-26 | 株式会社日立製作所 | 半導体記憶装置 |
US4879683A (en) * | 1987-09-28 | 1989-11-07 | Texas Instruments Incorporated | A gaas register file having a plurality of latches |
JPH01194194A (ja) * | 1988-01-29 | 1989-08-04 | Nec Ic Microcomput Syst Ltd | 半導体メモリ装置 |
JPH01205788A (ja) * | 1988-02-12 | 1989-08-18 | Toshiba Corp | 半導体集積回路 |
JP2598081B2 (ja) * | 1988-05-16 | 1997-04-09 | 株式会社東芝 | 半導体メモリ |
-
1990
- 1990-05-21 JP JP2130893A patent/JP2744115B2/ja not_active Expired - Lifetime
-
1991
- 1991-05-17 DE DE69116426T patent/DE69116426T2/de not_active Expired - Lifetime
- 1991-05-17 KR KR1019910008047A patent/KR950007141B1/ko not_active IP Right Cessation
- 1991-05-17 EP EP91108048A patent/EP0458213B1/en not_active Expired - Lifetime
- 1991-05-20 US US07/702,375 patent/US5301164A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69116426D1 (de) | 1996-02-29 |
KR950007141B1 (ko) | 1995-06-30 |
JPH0426986A (ja) | 1992-01-30 |
EP0458213B1 (en) | 1996-01-17 |
US5301164A (en) | 1994-04-05 |
JP2744115B2 (ja) | 1998-04-28 |
EP0458213A2 (en) | 1991-11-27 |
EP0458213A3 (en) | 1993-01-27 |
DE69116426T2 (de) | 1996-06-05 |
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