KR910020727A - Semiconductor memory sense amplifier driver circuit - Google Patents

Semiconductor memory sense amplifier driver circuit

Info

Publication number
KR910020727A
KR910020727A KR1019900007388A KR900007388A KR910020727A KR 910020727 A KR910020727 A KR 910020727A KR 1019900007388 A KR1019900007388 A KR 1019900007388A KR 900007388 A KR900007388 A KR 900007388A KR 910020727 A KR910020727 A KR 910020727A
Authority
KR
South Korea
Prior art keywords
semiconductor memory
driver circuit
sense amplifier
amplifier driver
memory sense
Prior art date
Application number
KR1019900007388A
Other languages
Korean (ko)
Other versions
KR920010346B1 (en
Inventor
민동선
황홍선
진대제
조수인
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019900007388A priority Critical patent/KR920010346B1/en
Priority to US07/550,997 priority patent/US5130580A/en
Priority to DE4023640A priority patent/DE4023640C2/en
Priority to FR9010674A priority patent/FR2662536A1/en
Priority to IT04851090A priority patent/IT1246334B/en
Priority to FR9014860A priority patent/FR2662843B1/en
Priority to FR9014861A priority patent/FR2662844B1/en
Priority to JP2336945A priority patent/JP2607309B2/en
Priority to CN91103355A priority patent/CN1023623C/en
Priority to GB9110880A priority patent/GB2246005B/en
Publication of KR910020727A publication Critical patent/KR910020727A/en
Application granted granted Critical
Publication of KR920010346B1 publication Critical patent/KR920010346B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Amplifiers (AREA)
  • Read Only Memory (AREA)
KR1019900007388A 1990-05-23 1990-05-23 Semiconductor memory sensor amp drive circuit KR920010346B1 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR1019900007388A KR920010346B1 (en) 1990-05-23 1990-05-23 Semiconductor memory sensor amp drive circuit
US07/550,997 US5130580A (en) 1990-05-23 1990-07-11 Sense amplifier driving circuit employing current mirror for semiconductor memory device
DE4023640A DE4023640C2 (en) 1990-05-23 1990-07-25 Sense amplifier driver circuit for a semiconductor memory
FR9010674A FR2662536A1 (en) 1990-05-23 1990-08-27 DETECTION AMPLIFIER DRIVING CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE.
IT04851090A IT1246334B (en) 1990-05-23 1990-11-23 PILOT CIRCUIT OF DETECTION AMPLIFIERS FOR SEMICONDUCTOR MEMORY DEVICE.
FR9014860A FR2662843B1 (en) 1990-05-23 1990-11-28 DETECTION AMPLIFIER DRIVING CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE.
FR9014861A FR2662844B1 (en) 1990-05-23 1990-11-28 DETECTION AMPLIFIER DRIVING CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE.
JP2336945A JP2607309B2 (en) 1990-05-23 1990-11-29 Semiconductor memory sense amplifier drive circuit
CN91103355A CN1023623C (en) 1990-05-23 1991-05-20 Sense amplifier driving circuit for semiconductor memory device
GB9110880A GB2246005B (en) 1990-05-23 1991-05-20 Sense amplifier driving circuit for a semiconductor memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900007388A KR920010346B1 (en) 1990-05-23 1990-05-23 Semiconductor memory sensor amp drive circuit

Publications (2)

Publication Number Publication Date
KR910020727A true KR910020727A (en) 1991-12-20
KR920010346B1 KR920010346B1 (en) 1992-11-27

Family

ID=19299314

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900007388A KR920010346B1 (en) 1990-05-23 1990-05-23 Semiconductor memory sensor amp drive circuit

Country Status (8)

Country Link
US (1) US5130580A (en)
JP (1) JP2607309B2 (en)
KR (1) KR920010346B1 (en)
CN (1) CN1023623C (en)
DE (1) DE4023640C2 (en)
FR (1) FR2662536A1 (en)
GB (1) GB2246005B (en)
IT (1) IT1246334B (en)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2789779B2 (en) * 1990-04-14 1998-08-20 日本電気株式会社 Memory device
JPH04356799A (en) * 1990-08-29 1992-12-10 Mitsubishi Electric Corp Semiconductor memory
US5334948A (en) * 1993-02-17 1994-08-02 National Semiconductor Corporation CMOS operational amplifier with improved rail-to-rail performance
US5721875A (en) * 1993-11-12 1998-02-24 Intel Corporation I/O transceiver having a pulsed latch receiver circuit
JPH07211081A (en) * 1994-01-06 1995-08-11 Mitsubishi Electric Corp Semiconductor memory device
KR0122108B1 (en) * 1994-06-10 1997-12-05 윤종용 Circuit and method for sensing bit-line signal in semiconductor memory unit
KR0121781B1 (en) * 1994-07-20 1997-12-05 김영환 Driving circuit for sensing amp. for bit-line
JPH08180697A (en) * 1994-09-16 1996-07-12 Texas Instr Inc <Ti> Reference circuit and method for supply of reference currentfor sense amplifier
US5508644A (en) * 1994-09-28 1996-04-16 Motorola, Inc. Sense amplifier for differential voltage detection with low input capacitance
KR0158476B1 (en) * 1994-12-20 1999-02-01 김광호 Bit-line sense circuit of semiconductor memory device
US5587684A (en) * 1995-05-12 1996-12-24 Exar Corporation Power down circuit for use in intergrated circuits
DE19536486C2 (en) * 1995-09-29 1997-08-07 Siemens Ag Evaluator and amplifier circuit
US5828239A (en) * 1997-04-14 1998-10-27 International Business Machines Corporation Sense amplifier circuit with minimized clock skew effect
US6002634A (en) * 1997-11-14 1999-12-14 Ramtron International Corporation Sense amplifier latch driver circuit for a 1T/1C ferroelectric memory
US6420908B2 (en) * 1999-01-05 2002-07-16 Infineon Technologies Ag Sense amplifier
JP3490045B2 (en) 2000-04-26 2004-01-26 Ｎｅｃマイクロシステム株式会社 Low noise buffer circuit
US6552581B1 (en) * 2000-08-25 2003-04-22 Agere Systems Inc. Current recycling circuit and a method of current recycling
US6507523B2 (en) 2000-12-20 2003-01-14 Micron Technology, Inc. Non-volatile memory with power standby
JP2002208277A (en) * 2001-01-05 2002-07-26 Toshiba Corp Sense amplifier control circuit for semiconductor memory
AU2003303685A1 (en) * 2003-01-08 2004-08-10 Agency For Science, Technology And Research Apparatus and method for making a constant current source
US7372746B2 (en) 2005-08-17 2008-05-13 Micron Technology, Inc. Low voltage sensing scheme having reduced active power down standby current
US9236102B2 (en) 2012-10-12 2016-01-12 Micron Technology, Inc. Apparatuses, circuits, and methods for biasing signal lines
US9042190B2 (en) * 2013-02-25 2015-05-26 Micron Technology, Inc. Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase
US9672875B2 (en) 2014-01-27 2017-06-06 Micron Technology, Inc. Methods and apparatuses for providing a program voltage responsive to a voltage determination
TW201817169A (en) * 2016-10-21 2018-05-01 燦瑞半導體有限公司 Gate driving circuit for driving high voltage or negative voltage speeds up transmission of circuit signals by way of utilizing instantaneous current
US9830994B1 (en) * 2017-02-02 2017-11-28 Sandisk Technologies Llc Sequential deselection of word lines for suppressing first read issue
US11258250B2 (en) * 2018-12-04 2022-02-22 Synaptics Incorporated Over current protection with improved stability systems and methods
CN111010147B (en) * 2019-12-04 2023-06-16 南京轨道交通系统工程有限公司 IGBT gate driver of double-slope peak suppression analog circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038646A (en) * 1976-03-12 1977-07-26 Intel Corporation Dynamic mos ram
US4694205A (en) * 1985-06-03 1987-09-15 Advanced Micro Devices, Inc. Midpoint sense amplification scheme for a CMOS DRAM
US4873673A (en) * 1986-12-03 1989-10-10 Hitachi, Ltd. Driver circuit having a current mirror circuit
US4888503A (en) * 1987-10-13 1989-12-19 Intel Corporation Constant current biased common gate differential sense amplifier
KR900008436B1 (en) * 1987-12-08 1990-11-20 삼성반도체통신 주식회사 Dual-stope waveform generating circuitry
KR910002033B1 (en) * 1988-07-11 1991-03-30 삼성전자 주식회사 Sense amp driving circuit for memory cell
KR920001325B1 (en) * 1989-06-10 1992-02-10 삼성전자 주식회사 Sense amp driver of memory device

Also Published As

Publication number Publication date
CN1023623C (en) 1994-01-26
CN1056763A (en) 1991-12-04
FR2662536A1 (en) 1991-11-29
DE4023640C2 (en) 2000-02-17
GB2246005A (en) 1992-01-15
DE4023640A1 (en) 1991-11-28
KR920010346B1 (en) 1992-11-27
US5130580A (en) 1992-07-14
IT9048510A1 (en) 1991-11-24
JP2607309B2 (en) 1997-05-07
GB2246005B (en) 1994-08-31
IT1246334B (en) 1994-11-17
JPH0430389A (en) 1992-02-03
GB9110880D0 (en) 1991-07-10
IT9048510A0 (en) 1990-11-23

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20091113

Year of fee payment: 18

EXPY Expiration of term