KR910020673A - 고체표면내 개개원자 또는 원자그룹의 시간에 안정한 라벨링 방법 및 원자범위의 정보단위의 저장방법 - Google Patents

고체표면내 개개원자 또는 원자그룹의 시간에 안정한 라벨링 방법 및 원자범위의 정보단위의 저장방법 Download PDF

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KR910020673A
KR910020673A KR1019910007911A KR910007911A KR910020673A KR 910020673 A KR910020673 A KR 910020673A KR 1019910007911 A KR1019910007911 A KR 1019910007911A KR 910007911 A KR910007911 A KR 910007911A KR 910020673 A KR910020673 A KR 910020673A
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South Korea
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KR1019910007911A
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푸히스 하랄트
쉼멜 토마스
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라이싱어, 바르츠
바스프 악티엔게젤샤프트
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Publication of KR910020673A publication Critical patent/KR910020673A/ko

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/316—Changing physical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H01J2237/31738—Direct-write microstructures using STM

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Theoretical Computer Science (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
  • Heat Sensitive Colour Forming Recording (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Disintegrating Or Milling (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)

Abstract

내용 없음

Description

고체표면내 개개원자 또는 원자그룹의 시간에 안정한 라벨링 방법 및 원자범위의 정보단위의 저장방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이셀렌화 텅스텐 표면의 STM(스캐닝 터널링 현미경)영상사진, 제2도는 약 1. 5V 펄스를 가한 후에의 제1도에 기재된 표면과 같은 표면의 영상사진.

Claims (5)

  1. 표면에 평행한 원자격자구조를 크게 변형시키지 않고 외부원자들을 참여시키지 않으면서 표면내 개개원자 또는 원자그룹을 초기상태에 비해 변형된 구조 또는 전자배열로 전환시키는 것으로 이루어진, 고체표면내 개개원자 또는 원자그룹의 시간에 안정한 라벨링 방법.
  2. 제1항에 있어서, 구조 또는 전자배열의 변환은 제한지역에서 제한시간동안 외부전기장 또는 자기장을 가하여 달성됨을 특징으로 하는 방법.
  3. 제1항에 있어서, 구조 또는 전자배열의 변환은 제한지역에서 제한시간동안 외부전기장 또는 자기장을 가하여 달성되며, 제한시간 및 지역은 표면 민감 스캐닝 프로브의 팁에 의해 발생됨을 특징으로 하는 방법.
  4. 제1또는 2또는 3항중 어느 한 항에 있어서, 사용된 표면이 반도체 적충된 재료임을 특징으로 하는 방법.
  5. 제1항에 기재된 개개원자 또는 원자그룹이 안정한 라벨링 방법을 사용하는, 정보단위를 원자범위로 저정하기 위한 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910007911A 1990-05-16 1991-05-16 고체표면내 개개원자 또는 원자그룹의 시간에 안정한 라벨링 방법 및 원자범위의 정보단위의 저장방법 KR910020673A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4015656.7 1990-05-16
DE4015656A DE4015656A1 (de) 1990-05-16 1990-05-16 Verfahren zur zeitlich stabilen markierung einzelner atome oder atomgruppen einer festkoerperoberflaeche sowie verwendung dieses verfahrens zur speicherung von informationseinheiten im atomaren bereich

Publications (1)

Publication Number Publication Date
KR910020673A true KR910020673A (ko) 1991-12-20

Family

ID=6406494

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910007911A KR910020673A (ko) 1990-05-16 1991-05-16 고체표면내 개개원자 또는 원자그룹의 시간에 안정한 라벨링 방법 및 원자범위의 정보단위의 저장방법

Country Status (10)

Country Link
EP (1) EP0457168B1 (ko)
JP (1) JPH04228131A (ko)
KR (1) KR910020673A (ko)
AT (1) ATE149263T1 (ko)
AU (1) AU7621491A (ko)
CA (1) CA2042078A1 (ko)
DE (2) DE4015656A1 (ko)
FI (1) FI912292A (ko)
IE (1) IE911565A1 (ko)
TW (1) TW274602B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4100254A1 (de) * 1991-01-07 1992-07-09 Basf Ag Verfahren zur chemischen markierung von festkoerperoberflaechen auf atomarer skala sowie verwendung dieses verfahrens zur speicherung von informationseinheiten im atomaren bereich
DE4120365A1 (de) * 1991-06-20 1992-12-24 Basf Ag Verfahren zur gezielten modifikation einzelner nanometer- und subnanometer-strukturen einer festkoerperoberflaeche

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833894A (en) * 1973-06-20 1974-09-03 Ibm Organic memory device
DE3607932A1 (de) * 1986-03-11 1987-09-17 Werner Prof Dr Kreutz Datenspeicher, sowie verfahren zur herstellung eines datenspeichers und einer sonde zur informationseingabe und abnahme sowie loeschung
EP0272935B1 (en) * 1986-12-24 1994-03-16 Canon Kabushiki Kaisha Recording device and reproducing device
EP0307210A3 (en) * 1987-09-10 1991-05-15 Seiko Instruments Inc. Memory writing apparatus
DE3943414A1 (de) * 1989-12-30 1991-07-04 Basf Ag Verfahren zur speicherung von informationseinheiten im nanometerbereich

Also Published As

Publication number Publication date
ATE149263T1 (de) 1997-03-15
EP0457168B1 (de) 1997-02-26
DE59108561D1 (de) 1997-04-03
DE4015656A1 (de) 1991-11-21
AU7621491A (en) 1991-11-21
JPH04228131A (ja) 1992-08-18
FI912292A0 (fi) 1991-05-10
CA2042078A1 (en) 1991-11-17
FI912292A (fi) 1991-11-17
EP0457168A2 (de) 1991-11-21
IE911565A1 (en) 1991-11-20
EP0457168A3 (en) 1992-08-12
TW274602B (ko) 1996-04-21

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