KR930000943A - 고체 표면내 개별적인 나노미터 및 서브나노미터 구조의 선별적인 수정방법 - Google Patents

고체 표면내 개별적인 나노미터 및 서브나노미터 구조의 선별적인 수정방법 Download PDF

Info

Publication number
KR930000943A
KR930000943A KR1019920010638A KR920010638A KR930000943A KR 930000943 A KR930000943 A KR 930000943A KR 1019920010638 A KR1019920010638 A KR 1019920010638A KR 920010638 A KR920010638 A KR 920010638A KR 930000943 A KR930000943 A KR 930000943A
Authority
KR
South Korea
Prior art keywords
nanometer
structures
subnanometer
modification
probe
Prior art date
Application number
KR1019920010638A
Other languages
English (en)
Inventor
푹스 하랄트
쉼멜 토마스
Original Assignee
빅케, 바르츠
바스프 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 빅케, 바르츠, 바스프 악티엔게젤샤프트 filed Critical 빅케, 바르츠
Publication of KR930000943A publication Critical patent/KR930000943A/ko

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G11B9/1472—Record carriers for recording or reproduction involving the use of microscopic probe means characterised by the form
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q80/00—Applications, other than SPM, of scanning-probe techniques
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/86—Scanning probe structure
    • Y10S977/861—Scanning tunneling probe

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Abstract

내용 없음

Description

고체 표면내 개별적인 나노미터 및 서브나노미터 구조의 선별적인 수정방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 구조의 선택적 수정을 도시한 도면,
제2도는 본 발명에 따른 방법에 의해서 돌설부상을 통과하는 탐침의 궤도를 도시한 도면,
제3도는 본 발명에 따른 표면 수정전에 WSe2의 질서 정연한 원자 구조를 촬영한 사진,
제4도는 대응되는 점에서 4개의 전압 펄스들에 의해서 생기는 선에서의 4개의 돌설부를 촬영한 사진,
제5도는 본 발명에 다른 수정방법 직후에 제4도에 활영된 구조를 재촬영한 사진.

Claims (12)

  1. 고체의 표면에서 나노미터 및 서브나노미터 규모를 갖는 아주 미세한 구조의 선별적 수정과 가역적 제거를 하기 위한 방법에 있어서, 탐침, 예를들어, 표면위의 움스트롱 범위의 거리에 위치하거나 표면과 접촉하여서 본질적으로 같은 거리에 있는 구조위를 이동하는 것을 구성하고 그래서 이러한 구조에 변화를 유발시키는 방법.
  2. 제1항에 있어서, 사용되는 탐침이 스캔닝 터널링 마이크로스코프(STM)의 끝 부분이 되도록 하는 방법.
  3. 제1항에 있어서, 사용되는 탐침이 스캔닝 원자힘 마이크로스코프(STM)의 레버의 끝부분이 되도록 하는 방법.
  4. 제1항에 있어서, 반도체 층 재료의 표면 구조가 조작되도록 하는 방법.
  5. 제1항에 있어서, 표면의 부분적인 소성 변형을 일으키도록 하는 방법.
  6. 제1항인 구조 수정 전후에 나노미터 혹은 서브나노미터 규모의 부분적 선명도로 고체 표면을 영상화하는 방법에 있어서, 구조 수정에 사용된 것과 같은 표면에 민감한 주사 탐침을 사용하여 영상화를 수행하는 방법.
  7. 기계적 변형에 의하여 또는 일시적인 전장의 부분적인 사용에 의하여 같거나 다른 탐침을 사용하여 먼저 만들어진 구조를 수정하기 위한 제1항인 방법의 용도.
  8. 표면상에 위치한 나노미터 구조와 표면상에 선별적으로 먼저 증착된 나노미터 구조상에 사용하기 위한 제1항인 방법의 용도.
  9. 제1항에 있어서, 표면의 원자 순서가 제1항인 간섭에 의하여 수정 부분에서 부분적으로라도 교란되거나 파괴되지 않도록 하는 방법.
  10. 정보단위를 저장하고 개별적 그리고 미리 저장된 정보 단위를 선별적으로 수정하기 위한 제1항 내지 제5항과 제7항 내지 제9항인 방법의 용도.
  11. 개별적인 구조 마다 하나 이상의 비트를 저장하기 위한 제1항 내지 제5항 그리고 제7항 내지 제10항인 방법의 용법에 있어서, 그 구조가 기존의 수정 방법에 의하여 적어도 두개의 명백히 서로 구별할 수 있는 한정된 그리고 시간적으로 안정된 상태의 하나(표면 구조가 대응점에 없는 2진 상태에 추가하여)로 전환되는 방법의 용도.
  12. 각개의 정보 단위를 선별적으로 지우고 또 기입된 정보 단위의 전체 라인들을 지우기 위한 제1항 내지 제5항 및 제7항 내지 제11항인 방법의 용도.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임
KR1019920010638A 1991-06-20 1992-06-19 고체 표면내 개별적인 나노미터 및 서브나노미터 구조의 선별적인 수정방법 KR930000943A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4120365A DE4120365A1 (de) 1991-06-20 1991-06-20 Verfahren zur gezielten modifikation einzelner nanometer- und subnanometer-strukturen einer festkoerperoberflaeche
DEP4120365.8 1991-06-20

Publications (1)

Publication Number Publication Date
KR930000943A true KR930000943A (ko) 1993-01-16

Family

ID=6434367

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920010638A KR930000943A (ko) 1991-06-20 1992-06-19 고체 표면내 개별적인 나노미터 및 서브나노미터 구조의 선별적인 수정방법

Country Status (7)

Country Link
US (1) US5343042A (ko)
EP (1) EP0519269B1 (ko)
JP (1) JPH05242849A (ko)
KR (1) KR930000943A (ko)
CA (1) CA2070210A1 (ko)
DE (2) DE4120365A1 (ko)
TW (1) TW227049B (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06187675A (ja) * 1992-09-25 1994-07-08 Canon Inc 情報処理装置、及びそれを用いる情報処理方法
JP2541091B2 (ja) * 1993-02-26 1996-10-09 日本電気株式会社 炭素材料とその製造方法
DE4342314C2 (de) * 1993-12-11 1997-08-14 Joachim Behrendt Verfahren zur Erzeugung von Strukturen
US5831181A (en) * 1995-09-29 1998-11-03 The Regents Of The University Of California Automated tool for precision machining and imaging
DE19733520C2 (de) * 1997-08-02 1999-08-05 Dresden Ev Inst Festkoerper Verfahren zur Nanostrukturierung von amorphen Kohlenstoffschichten
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
US6197455B1 (en) 1999-01-14 2001-03-06 Advanced Micro Devices, Inc. Lithographic mask repair using a scanning tunneling microscope
DE10024059A1 (de) * 2000-05-11 2002-07-11 Ludwig Brehmer Optisch induzierte Oberflächenmodifizierung im Nanometerbereich
US6862921B2 (en) * 2001-03-09 2005-03-08 Veeco Instruments Inc. Method and apparatus for manipulating a sample
US7233517B2 (en) * 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
KR20050065902A (ko) * 2003-12-26 2005-06-30 한국전자통신연구원 나노 포어 형성 방법
US7463573B2 (en) 2005-06-24 2008-12-09 Nanochip, Inc. Patterned media for a high density data storage device
US7367119B2 (en) 2005-06-24 2008-05-06 Nanochip, Inc. Method for forming a reinforced tip for a probe storage device
US7309630B2 (en) 2005-07-08 2007-12-18 Nanochip, Inc. Method for forming patterned media for a high density data storage device
CN106370891B (zh) * 2016-10-24 2023-09-15 中南大学 扫描隧道显微镜扫描探针的制备方法及控制电路
CN109655400B (zh) * 2018-12-26 2021-02-26 天地科技股份有限公司 巷道塑性区分析方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878213A (en) * 1984-09-14 1989-10-31 Xerox Corporation System for recording and readout of information at atomic scale densities and method therefor
DE3772048D1 (de) * 1986-12-07 1991-09-12 Lasarray Holding Ag Verfahren und vorrichtung zur erzeugung von materialstrukturen im bereich atomarer dimensionen.
US4916688A (en) * 1988-03-31 1990-04-10 International Business Machines Corporation Data storage method using state transformable materials
US5144581A (en) * 1989-02-09 1992-09-01 Olympus Optical Co., Ltd. Apparatus including atomic probes utilizing tunnel current to read, write and erase data
US4896044A (en) * 1989-02-17 1990-01-23 Purdue Research Foundation Scanning tunneling microscope nanoetching method
US5015323A (en) * 1989-10-10 1991-05-14 The United States Of America As Represented By The Secretary Of Commerce Multi-tipped field-emission tool for nanostructure fabrication
US5144148A (en) * 1989-11-07 1992-09-01 International Business Machines Corporation Process for repositioning atoms on a surface using a scanning tunneling microscope
US4987312A (en) * 1989-11-07 1991-01-22 International Business Machines Corporation Process for repositioning atoms on a surface using a scanning tunneling microscope
DE3943414A1 (de) * 1989-12-30 1991-07-04 Basf Ag Verfahren zur speicherung von informationseinheiten im nanometerbereich
JP2999282B2 (ja) * 1990-03-09 2000-01-17 キヤノン株式会社 記録再生方法及び装置
DE4015656A1 (de) * 1990-05-16 1991-11-21 Basf Ag Verfahren zur zeitlich stabilen markierung einzelner atome oder atomgruppen einer festkoerperoberflaeche sowie verwendung dieses verfahrens zur speicherung von informationseinheiten im atomaren bereich
DE4021075A1 (de) * 1990-07-03 1992-01-09 Basf Ag Verfahren zur speicherung von informationseinheiten im nanometerbereich
US5138174A (en) * 1991-07-16 1992-08-11 E. I. Du Pont De Nemours And Company Nanometer-scale structures and lithography

Also Published As

Publication number Publication date
EP0519269B1 (de) 1997-02-26
CA2070210A1 (en) 1992-12-21
DE4120365A1 (de) 1992-12-24
DE59208060D1 (de) 1997-04-03
JPH05242849A (ja) 1993-09-21
EP0519269A1 (de) 1992-12-23
TW227049B (ko) 1994-07-21
US5343042A (en) 1994-08-30

Similar Documents

Publication Publication Date Title
KR930000943A (ko) 고체 표면내 개별적인 나노미터 및 서브나노미터 구조의 선별적인 수정방법
Rugar et al. Atomic force microscopy
Chen Introduction to Scanning Tunneling Microscopy Third Edition
Pérez‐Murano et al. Nanometer‐scale oxidation of Si (100) surfaces by tapping mode atomic force microscopy
CN1020976C (zh) 表面亚微米处理方法及设备
DE69128317D1 (de) Fühlervorrichtung zum Nachweis von Mikroverschiebungen sowie Mikroskop- und Informationsverarbeitungseinrichtungen, die eine solche Vorrichtung verwenden
Cho et al. Terabit inch− 2 ferroelectric data storage using scanning nonlinear dielectric microscopy nanodomain engineering system
KR920015315A (ko) 원자 규모로의 고체 표면의 화학적 라벨링 및 원자범위로의 정보 단위의 저장
Braun et al. Observation of charge-density wave domains on the Cr (110) surface by low-temperature scanning tunneling microscopy
Dürig et al. “Millipede”–an AFM data storage system at the frontier of nanotribology
Bernhardt et al. Mechanisms for the deposition of nanometer‐sized structures from organic fluids using the scanning tunneling microscope
US5359199A (en) Specific modification of the surfaces of solids in the nanometer range by local delamination, and the storage of information units
Albrecht Advances in atomic force microscopy and scanning tunneling microscopy
Rabe et al. Scanning tunneling microscopy of chain-molecules at solid-fluid-interfaces
US7253409B2 (en) Electrochemical nano-patterning using ionic conductors
KR920003273A (ko) 고체표면내의 개개원자 또는 원자그룹의 시간에 안정한 라벨링 방법 및 원자범위로 정보단위를 저장하기 위한 방법
Wada Atom Electronics: A proposal of nano-scale devices based on atom/molecule switching
QUATE Metal-vacuum-metal tunneling(Final Technical Report, 1 Sep. 1984- 31 Aug. 1990)
KR910020673A (ko) 고체표면내 개개원자 또는 원자그룹의 시간에 안정한 라벨링 방법 및 원자범위의 정보단위의 저장방법
Barrett Development and applications of atomic force microscopy
DE3943414A1 (de) Verfahren zur speicherung von informationseinheiten im nanometerbereich
Stahl Electronic transport in ropes of single wall carbon nanotubes
Yukhnevich et al. STM probe stimulated creation of nanosize memory devices
Yanagida et al. Construction of C60 monolayer based on structural relaxation on the water surface
Wada A proposal of atom electronics based on atom/molecule switching devices

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application