CA2042078A1 - Time-stable labeling of individual atoms or groups of atoms in the surface of a solid, and the storage of information units in the atomic range - Google Patents
Time-stable labeling of individual atoms or groups of atoms in the surface of a solid, and the storage of information units in the atomic rangeInfo
- Publication number
- CA2042078A1 CA2042078A1 CA002042078A CA2042078A CA2042078A1 CA 2042078 A1 CA2042078 A1 CA 2042078A1 CA 002042078 A CA002042078 A CA 002042078A CA 2042078 A CA2042078 A CA 2042078A CA 2042078 A1 CA2042078 A1 CA 2042078A1
- Authority
- CA
- Canada
- Prior art keywords
- atoms
- atomic
- groups
- time
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/10—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using electron beam; Record carriers therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
- H01J2237/316—Changing physical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31735—Direct-write microstructures
- H01J2237/31738—Direct-write microstructures using STM
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Theoretical Computer Science (AREA)
- Optical Recording Or Reproduction (AREA)
- Heat Sensitive Colour Forming Recording (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Sampling And Sample Adjustment (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Disintegrating Or Milling (AREA)
- Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
Abstract
O.Z. 0050/41616 Abstract of the Disclosure: A process useful for informa-tion storage is described for the time-stable labeling of individual atoms or groups of atoms in the surface of a solid by means of a modified structural or electronic configuration.
Description
O.Z. 0050/~1616 T.ime-stable labelin~ of individual atoms or qroups of atoms _ n the surface of a sol.id, and the storaae of nformat on_units in the atomic ranqe The present in~ention relates to a process for the tLme-stable labeling of in~ividual atoms or atomic groups in the surface of a solid by means of a modified structural or electronic configuxation, and the use of this process for information storage.
The storage of information, in particular image and data signals, currently takes place predominantly using magne~ic or optical recording media. The infor-mation density which can be achieved using the latter i5 determined by the smallest info~mation units which can be written and read again by the process. In conventional magnetic stora~e media, these units are determined by the size of the magnetic domains (Wei~ regions)l from a mechanical point of view by the head gap of the read/write heads used and by the distance of the read/write uni~ from the actual infonma~ion carrier. In information carriers where the stored information is produced by a change in optical properties, the limit is the wavelength of the light used. The smallest information units here can thus not be smaller than about half the wa~elength of the light. An increase in storage density in op~ical recording carriers of thi~ type ha~ in the meantime also been achieved through op~ical near-field micro~copy, where the optical read unit is only a few nanometer~ above the information-carrying surfac~.
~he bes~ informa~ion dsn~ities achieYed here are in the order of about 20 nm.
A further increas~ in the information denæity is only possible by u~ing close-field techniques with a rssolu~ion in ~hs subnanome~er range. Suitable me~hods for thi~ purpose are scanning probe techniques, including the ~canning tunnsling microscope ~nd the atomic force microscope. These methodq allow imaging of surfaces on an atomic scale. It ha~ therefore been proposed to produce `~ 0 7 ~
The storage of information, in particular image and data signals, currently takes place predominantly using magne~ic or optical recording media. The infor-mation density which can be achieved using the latter i5 determined by the smallest info~mation units which can be written and read again by the process. In conventional magnetic stora~e media, these units are determined by the size of the magnetic domains (Wei~ regions)l from a mechanical point of view by the head gap of the read/write heads used and by the distance of the read/write uni~ from the actual infonma~ion carrier. In information carriers where the stored information is produced by a change in optical properties, the limit is the wavelength of the light used. The smallest information units here can thus not be smaller than about half the wa~elength of the light. An increase in storage density in op~ical recording carriers of thi~ type ha~ in the meantime also been achieved through op~ical near-field micro~copy, where the optical read unit is only a few nanometer~ above the information-carrying surfac~.
~he bes~ informa~ion dsn~ities achieYed here are in the order of about 20 nm.
A further increas~ in the information denæity is only possible by u~ing close-field techniques with a rssolu~ion in ~hs subnanome~er range. Suitable me~hods for thi~ purpose are scanning probe techniques, including the ~canning tunnsling microscope ~nd the atomic force microscope. These methodq allow imaging of surfaces on an atomic scale. It ha~ therefore been proposed to produce `~ 0 7 ~
- 2 - O.Z. 0050/41616 information s~orage media having the highest possible density, namely in the range of individual atoms or molecules. Success in developing these media would result in information densitieR in the terabyte/cm2 range.
S A number of proposals have been made for storing information in the nanometer range on inorganic or organic surfaces, including M.A. McCord et al., J. Vac.
Sci. Technol. B4, (1986), 86-88, R.M. Silver et al., Appl. Phys. Lett. 51 ~1987), 247-249 and U. Staufer et al., ~. Vac. Sci. Technol. A6 tl988), 537-539. The depo~ition of indi~idual atom~ has also been reported (R.S. Becker e~ al., Nature 325 (1987~ 415 421).
How2ver,-all the proposal~ hitherto for the provision of maximum-re301ution information storage media which also have, in particular, long-term stability are unsatisac~ory. Wherea organic storage media are incap-able of producing line widths of ~lO nm, inorganic systems, which can reproduce struc~ure3 down to 3 nm, are unstable over r~latively long periods, ie. from minutes to hours. In ~he case of the long-term stable structures in silicon which have previously been disclosed ~Van Lo~nen et al., Appl. Phys. Lett. 55 (1989), 1312 1314), by contrast, the atomic struc~ure i3 locally de~troyed, ie. the atomic ord~r ~ lo~t. A p.roces~ of this type is there~ore only ~uit~bl~ for producing non-~rasable ~torag~ ~edi~
It i~ th~r~fo ~ ~ ~b~ct of the present inven-tion to pro~lde a proce~ ~or the 3table labeling of atoms or a~omic ~roups which facilitates, in particular, ~t ~l~ ~torage o~ informa~lon withou~ the destruc~ion of the local atom~c lattice.
We have f~und that ~his ob~ect is achieved by a process for the ~tcble l~b~lin~ ~ atoms or groups of atoms in the surfac~ of a solid when individual atoms or groups of atoms in the suxface are converted into a con-figuration which i~ modified compared with ~he adjacent atoms without significantly modifying the atomic lattice 2~07~
, - 3 - O.Z. 0050t~1616 structure parallel to th~ surface and without the participation of foreign atom~.
The process according to the invention can be carried out, in particular, by effecting the structural or electronic change in conigura~ion in the surface of a semiconducting laminate material by applying an exter-nal electrical or magnetic field for a limited tLme and over a limited area.
In the process according to the invention, the modification in configuration is particulaxly advantage-ously achieved by producing the local geometric, structural or electronic reconfiguration by generating metastable, excited states in a double- or multiwell potential.
The proces~ according to the invention for stable labeling of individual atom~ or group~ of atoms can be par~icularly advantageously employed for s~oring informa-tion unit This provide~ a way of ~toring information in the atomic range and thu~ achieving a correspondingly high inform~tion density. However, the process according to the inven~ion can be u~ed not only for information storage, but also for erasing ~ored information. Thu~, information units stoxed by the process according to the invention can be erased again through relaxation by supplying energy, thus restoring the original state. For this purpose, the supply of thermal energy by h~ating the entire ~urface or by laser treatment of the entire surface or of points or expo~ing th~ surface to light is particularly ~uitable.
The proce~s according to the invention proceeds from the surface of a solid, in particular of a layPred semiconductor, u~ually compri~ing a chalcogenide, eg.
WSa2. The atomic labeling i~ earried out in the surface of a ~ubstance of thi t~pe u3ing the near field ~echnique, eg. by mean~ of a needle-~haped electrode of a surface-~ensitive scanning probe, for example a ~canning tunnel-ing micro~cope or a ~canning atomic force microscope, by 7 $
S A number of proposals have been made for storing information in the nanometer range on inorganic or organic surfaces, including M.A. McCord et al., J. Vac.
Sci. Technol. B4, (1986), 86-88, R.M. Silver et al., Appl. Phys. Lett. 51 ~1987), 247-249 and U. Staufer et al., ~. Vac. Sci. Technol. A6 tl988), 537-539. The depo~ition of indi~idual atom~ has also been reported (R.S. Becker e~ al., Nature 325 (1987~ 415 421).
How2ver,-all the proposal~ hitherto for the provision of maximum-re301ution information storage media which also have, in particular, long-term stability are unsatisac~ory. Wherea organic storage media are incap-able of producing line widths of ~lO nm, inorganic systems, which can reproduce struc~ure3 down to 3 nm, are unstable over r~latively long periods, ie. from minutes to hours. In ~he case of the long-term stable structures in silicon which have previously been disclosed ~Van Lo~nen et al., Appl. Phys. Lett. 55 (1989), 1312 1314), by contrast, the atomic struc~ure i3 locally de~troyed, ie. the atomic ord~r ~ lo~t. A p.roces~ of this type is there~ore only ~uit~bl~ for producing non-~rasable ~torag~ ~edi~
It i~ th~r~fo ~ ~ ~b~ct of the present inven-tion to pro~lde a proce~ ~or the 3table labeling of atoms or a~omic ~roups which facilitates, in particular, ~t ~l~ ~torage o~ informa~lon withou~ the destruc~ion of the local atom~c lattice.
We have f~und that ~his ob~ect is achieved by a process for the ~tcble l~b~lin~ ~ atoms or groups of atoms in the surfac~ of a solid when individual atoms or groups of atoms in the suxface are converted into a con-figuration which i~ modified compared with ~he adjacent atoms without significantly modifying the atomic lattice 2~07~
, - 3 - O.Z. 0050t~1616 structure parallel to th~ surface and without the participation of foreign atom~.
The process according to the invention can be carried out, in particular, by effecting the structural or electronic change in conigura~ion in the surface of a semiconducting laminate material by applying an exter-nal electrical or magnetic field for a limited tLme and over a limited area.
In the process according to the invention, the modification in configuration is particulaxly advantage-ously achieved by producing the local geometric, structural or electronic reconfiguration by generating metastable, excited states in a double- or multiwell potential.
The proces~ according to the invention for stable labeling of individual atom~ or group~ of atoms can be par~icularly advantageously employed for s~oring informa-tion unit This provide~ a way of ~toring information in the atomic range and thu~ achieving a correspondingly high inform~tion density. However, the process according to the inven~ion can be u~ed not only for information storage, but also for erasing ~ored information. Thu~, information units stoxed by the process according to the invention can be erased again through relaxation by supplying energy, thus restoring the original state. For this purpose, the supply of thermal energy by h~ating the entire ~urface or by laser treatment of the entire surface or of points or expo~ing th~ surface to light is particularly ~uitable.
The proce~s according to the invention proceeds from the surface of a solid, in particular of a layPred semiconductor, u~ually compri~ing a chalcogenide, eg.
WSa2. The atomic labeling i~ earried out in the surface of a ~ubstance of thi t~pe u3ing the near field ~echnique, eg. by mean~ of a needle-~haped electrode of a surface-~ensitive scanning probe, for example a ~canning tunnel-ing micro~cope or a ~canning atomic force microscope, by 7 $
- 4 - O.Z. 005~/41616 applying a short duration electrical or maynetic field.
Since the area of the maximum electrical field of a scanning probe of this type is preferably from 10 nm to O.1 nm on the surface of the semiconducting layered material, the atoms or atomic groups can thus be affec~ed. Thi~ local supply of energy mean~ that the atoms or atomic groups affected are apparently raised into a stable configuration above the mean level o the surrounding atoms. ~n essential feature here is that the procedure can be carried out under normal ambient condi-tion~, ie., for example, in air and at room temperature.
The aim of erasing the stored informa~ion again can be achieved , for example, by thermal treatment of the surface, as is possible, in~er alia, by laser ir-radiation. The atoms or atomic groups apparently raisedabove the mean level of the surrounding atom~ are thus arranged back into the previou~ structure.
~ he near-field technique used for writing the informati~n can be a conventional scanning tunneling microscopy or atomic force microscopy process. ~hP
arrangement of these near-field ltechniques for charac-terizing surfaces is known and has been describ~d (Y. Ku~
et al., Rev. Sci. Instrum. 60(2~ (1989), 165-180).
The proces~ according to the invention is des-cribed in illustrative termæ below:
The ~urface of a tungs~en diselenide sample wasfirst Lmaged with atomic re~olution using a scanning tunn~ling microscope (S~M). During the scan o~ ths tunneling tip over the sample, voltage pulses having an amplitude of from 0.8 to 10 volt were then applied, superimpo~ed on the tunneling voltage~ between the tunnelin~ tip and the ~ample by mean~ of a pul~e genera-tor. Subsequent sca~ning of the sample give~ structures on the surace with an extension increa~ing with the level of the voltage pulse~.
The switching of individual atom~ or atomic g~oup~ i8 ~hown in Fig. 2; Fig. 1 (image size 2~4.2~3 ~ 5 ~ . 0050/41616 approximatPly 100 x 100 A) shows the STN image of a grown tungsten diselenide surface, and Fig. 2 (image size approxima~ely 300 x 300 ~) shows the image of the same surface Lmmediately after application of approximately 1.5 volt pulses. Group~ comprising three atoms were specifically modified here, the rela~i~e position corres-ponding exactly to the positions of the tunneling tip at the time of the pulse. It was in this way possible to write patterns onto the sample; each voltage pulse labels, in a defined position, atoms for which the spatial or electronic configuration has been modified.
There was no problem in writing more than 100 structures using the same tip and subsequently imaging these with atomic resolution. There were normally no variations in imaging quality of the tip as a consequence of the pulsing.
Both writing and reading can be carried out under normal conditions, ie., in particular, without using an inert ga~, vacuum or low temperatures.
In addition, it was also possible to show, ~y mean~ of urther e~periments, that the use of a high vacuum has no observable effect on the wri~ing or reading operation.
In order to test the stability of the labels with ~ime, certain arrangement~ of labeled points, for example in triangle.~, in squares or as parallelogr~m~, were written ~pecif ically, the re~ultant structure~ were imaged, and their relativ~ position~ to one another were recorded; the structures were found again after two days in unchanged shape and in the ~ama ~rrangemen~. In particular, i~ was al~o pos~ible to ~how that they are stable no~ only in vacuo or under an inert gas, but also in air.
For application a~ a method for information storage, it i3 es~ential that the reading operation does not modify the ~tored informa~ion. To this end, both large and emall 3tructure~ (Fig. 2) on various tungs~en 2 1~ Q 7 ~
, - 6 - O.Z. 0050/41516 diselenide samples were scanned using the STM over several hours, during which time they were imaged up to 500 times. In no case was a modification due to the imaging process t= reading process when used as a data carrier) observed.
Structures on tungsten diselenide surfaces were most easily erased by heating the sample surface at about 600C for about 40 minutes. Surfaces covered with struc-tures, but still ordered on an atomic level become sompletely flat and structureless again on an atomic level due to ~his operation.
For use as an information storage device, the functions reading, writing and erasing have thus been demons~rated and the proce~ses used to achieve them have been indicated; for the structur~s generated in Fig. 2, a data density of about 10 terabytes/cm2 is produced, exceeding the storage density of magnetic hard disks or magnetooptical disks by several orders of magni~ude.
Since the area of the maximum electrical field of a scanning probe of this type is preferably from 10 nm to O.1 nm on the surface of the semiconducting layered material, the atoms or atomic groups can thus be affec~ed. Thi~ local supply of energy mean~ that the atoms or atomic groups affected are apparently raised into a stable configuration above the mean level o the surrounding atoms. ~n essential feature here is that the procedure can be carried out under normal ambient condi-tion~, ie., for example, in air and at room temperature.
The aim of erasing the stored informa~ion again can be achieved , for example, by thermal treatment of the surface, as is possible, in~er alia, by laser ir-radiation. The atoms or atomic groups apparently raisedabove the mean level of the surrounding atom~ are thus arranged back into the previou~ structure.
~ he near-field technique used for writing the informati~n can be a conventional scanning tunneling microscopy or atomic force microscopy process. ~hP
arrangement of these near-field ltechniques for charac-terizing surfaces is known and has been describ~d (Y. Ku~
et al., Rev. Sci. Instrum. 60(2~ (1989), 165-180).
The proces~ according to the invention is des-cribed in illustrative termæ below:
The ~urface of a tungs~en diselenide sample wasfirst Lmaged with atomic re~olution using a scanning tunn~ling microscope (S~M). During the scan o~ ths tunneling tip over the sample, voltage pulses having an amplitude of from 0.8 to 10 volt were then applied, superimpo~ed on the tunneling voltage~ between the tunnelin~ tip and the ~ample by mean~ of a pul~e genera-tor. Subsequent sca~ning of the sample give~ structures on the surace with an extension increa~ing with the level of the voltage pulse~.
The switching of individual atom~ or atomic g~oup~ i8 ~hown in Fig. 2; Fig. 1 (image size 2~4.2~3 ~ 5 ~ . 0050/41616 approximatPly 100 x 100 A) shows the STN image of a grown tungsten diselenide surface, and Fig. 2 (image size approxima~ely 300 x 300 ~) shows the image of the same surface Lmmediately after application of approximately 1.5 volt pulses. Group~ comprising three atoms were specifically modified here, the rela~i~e position corres-ponding exactly to the positions of the tunneling tip at the time of the pulse. It was in this way possible to write patterns onto the sample; each voltage pulse labels, in a defined position, atoms for which the spatial or electronic configuration has been modified.
There was no problem in writing more than 100 structures using the same tip and subsequently imaging these with atomic resolution. There were normally no variations in imaging quality of the tip as a consequence of the pulsing.
Both writing and reading can be carried out under normal conditions, ie., in particular, without using an inert ga~, vacuum or low temperatures.
In addition, it was also possible to show, ~y mean~ of urther e~periments, that the use of a high vacuum has no observable effect on the wri~ing or reading operation.
In order to test the stability of the labels with ~ime, certain arrangement~ of labeled points, for example in triangle.~, in squares or as parallelogr~m~, were written ~pecif ically, the re~ultant structure~ were imaged, and their relativ~ position~ to one another were recorded; the structures were found again after two days in unchanged shape and in the ~ama ~rrangemen~. In particular, i~ was al~o pos~ible to ~how that they are stable no~ only in vacuo or under an inert gas, but also in air.
For application a~ a method for information storage, it i3 es~ential that the reading operation does not modify the ~tored informa~ion. To this end, both large and emall 3tructure~ (Fig. 2) on various tungs~en 2 1~ Q 7 ~
, - 6 - O.Z. 0050/41516 diselenide samples were scanned using the STM over several hours, during which time they were imaged up to 500 times. In no case was a modification due to the imaging process t= reading process when used as a data carrier) observed.
Structures on tungsten diselenide surfaces were most easily erased by heating the sample surface at about 600C for about 40 minutes. Surfaces covered with struc-tures, but still ordered on an atomic level become sompletely flat and structureless again on an atomic level due to ~his operation.
For use as an information storage device, the functions reading, writing and erasing have thus been demons~rated and the proce~ses used to achieve them have been indicated; for the structur~s generated in Fig. 2, a data density of about 10 terabytes/cm2 is produced, exceeding the storage density of magnetic hard disks or magnetooptical disks by several orders of magni~ude.
Claims (5)
1. A process for the time-stable labeling of indivi-dual atoms or groups of atoms in the surface of a solid, which comprises converting individual atoms or groups of atoms in the surface into a structural or electronic configuration which is modified relative to the initial state without significantly modifying the atomic lattice structure parallel to the surface and without the participation of foreign atoms.
2. A process as claimed in claim 1, wherein the structural or electronic change in configuration is achieved by applying an external electrical or magnetic field for a limited time and over a limited area.
3. A process a claimed in claim 1, wherein the structural or electronic change in configuration is achieved by applying an external electrical or magnetic field for a limited time and over a limited area, which limited duration and area are generated by the tip of a surface-sensitive scanning probe.
4. A process as claimed in claim 1 or 2 or 3, wherein the surface employed is a semiconducting layered material.
5. A method of using a process for the stable labeling of individual atoms or atomic group as claimed in claim 1 for storing information units in the atomic range.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4015656A DE4015656A1 (en) | 1990-05-16 | 1990-05-16 | METHOD FOR THE TIMELY STABLE MARKING OF INDIVIDUAL ATOMS OR ATOMIC GROUPS OF A SOLID BODY SURFACE AND THE USE OF THIS METHOD FOR STORING INFORMATION UNITS IN THE ATOMIC AREA |
| DEP4015656.7 | 1990-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2042078A1 true CA2042078A1 (en) | 1991-11-17 |
Family
ID=6406494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002042078A Abandoned CA2042078A1 (en) | 1990-05-16 | 1991-05-13 | Time-stable labeling of individual atoms or groups of atoms in the surface of a solid, and the storage of information units in the atomic range |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP0457168B1 (en) |
| JP (1) | JPH04228131A (en) |
| KR (1) | KR910020673A (en) |
| AT (1) | ATE149263T1 (en) |
| AU (1) | AU7621491A (en) |
| CA (1) | CA2042078A1 (en) |
| DE (2) | DE4015656A1 (en) |
| FI (1) | FI912292A (en) |
| IE (1) | IE911565A1 (en) |
| TW (1) | TW274602B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4100254A1 (en) * | 1991-01-07 | 1992-07-09 | Basf Ag | METHOD FOR CHEMICAL MARKING OF SOLID BODY SURFACES ON THE ATOMARIC SCALE, AND USE OF THIS METHOD FOR STORING INFORMATION UNITS IN THE ATOMIC AREA |
| DE4120365A1 (en) * | 1991-06-20 | 1992-12-24 | Basf Ag | METHOD FOR TARGETED MODIFICATION OF INDIVIDUAL NANOMETER AND SUBNANOMETER STRUCTURES OF A SOLID BODY SURFACE |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3833894A (en) * | 1973-06-20 | 1974-09-03 | Ibm | Organic memory device |
| DE3607932A1 (en) * | 1986-03-11 | 1987-09-17 | Werner Prof Dr Kreutz | Data store, and process for producing a data store and a probe for information input and removal as well as erasure |
| DE3752099T2 (en) * | 1986-12-24 | 1997-11-13 | Canon Kk | Recording device and playback device |
| EP0307210A3 (en) * | 1987-09-10 | 1991-05-15 | Seiko Instruments Inc. | Memory writing apparatus |
| DE3943414A1 (en) * | 1989-12-30 | 1991-07-04 | Basf Ag | METHOD FOR STORING INFORMATION UNITS IN THE NANOMETER AREA |
-
1990
- 1990-05-16 DE DE4015656A patent/DE4015656A1/en not_active Withdrawn
-
1991
- 1991-04-24 JP JP3094166A patent/JPH04228131A/en not_active Withdrawn
- 1991-04-29 AU AU76214/91A patent/AU7621491A/en not_active Abandoned
- 1991-05-08 EP EP91107442A patent/EP0457168B1/en not_active Expired - Lifetime
- 1991-05-08 DE DE59108561T patent/DE59108561D1/en not_active Expired - Lifetime
- 1991-05-08 IE IE156591A patent/IE911565A1/en unknown
- 1991-05-08 AT AT91107442T patent/ATE149263T1/en not_active IP Right Cessation
- 1991-05-10 FI FI912292A patent/FI912292A/en unknown
- 1991-05-11 TW TW080103678A patent/TW274602B/zh active
- 1991-05-13 CA CA002042078A patent/CA2042078A1/en not_active Abandoned
- 1991-05-16 KR KR1019910007911A patent/KR910020673A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0457168A3 (en) | 1992-08-12 |
| DE4015656A1 (en) | 1991-11-21 |
| EP0457168B1 (en) | 1997-02-26 |
| DE59108561D1 (en) | 1997-04-03 |
| ATE149263T1 (en) | 1997-03-15 |
| KR910020673A (en) | 1991-12-20 |
| FI912292A0 (en) | 1991-05-10 |
| TW274602B (en) | 1996-04-21 |
| AU7621491A (en) | 1991-11-21 |
| IE911565A1 (en) | 1991-11-20 |
| FI912292A (en) | 1991-11-17 |
| JPH04228131A (en) | 1992-08-18 |
| EP0457168A2 (en) | 1991-11-21 |
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| FZDE | Discontinued |