KR910019256A - N-channel transistor manufacturing method - Google Patents

N-channel transistor manufacturing method Download PDF

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Publication number
KR910019256A
KR910019256A KR1019900005062A KR900005062A KR910019256A KR 910019256 A KR910019256 A KR 910019256A KR 1019900005062 A KR1019900005062 A KR 1019900005062A KR 900005062 A KR900005062 A KR 900005062A KR 910019256 A KR910019256 A KR 910019256A
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KR
South Korea
Prior art keywords
oxide film
channel transistor
transistor manufacturing
nitride
etched
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Application number
KR1019900005062A
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Korean (ko)
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KR930001900B1 (en
Inventor
김달수
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문정환
금성일렉트론 주식회사
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Priority to KR1019900005062A priority Critical patent/KR930001900B1/en
Publication of KR910019256A publication Critical patent/KR910019256A/en
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Publication of KR930001900B1 publication Critical patent/KR930001900B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

내용 없음No content

Description

앤-채널 트랜지스터 제조방법N-channel transistor manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 3 도는 본 발명의 채널 제조공정을 설명하기 위한 단면도3 is a cross-sectional view illustrating a channel manufacturing process of the present invention.

Claims (2)

베이스 산화와 질화막 디포지션 그리고 액티브 영역 마스크와 상기 질화막 에치 실시후 P형 기판(1)위에 3000A 두께의 필드 산화막(2)을 형성하고 에치되지 않은 질화막 제거후 게이트 산화막(3)을 성장시키며 폴리실리콘(4)과 3500A 두께의 산화막(5) 디포지션후 상기 폴리실리콘(4)과 산화막(5)을 선택적으로 제거하고 B+나 B++혹은 B+++이온을 주입한 후 통상의 후공정을 실시함을 특징으로 하는 앤-채널 트랜지스터의 제조방법.After the base oxide and nitride deposition, the active region mask and the nitride film are etched, a 3000A thick field oxide film 2 is formed on the P-type substrate 1, and the gate oxide film 3 is grown after removing the etched nitride film. 4 and 3500A oxide film 5 after the deposition of polysilicon 4, and then selectively removing the oxide film 5 and implanting B + B ++ and B +++ ions or after the normal process of a thickness A method of manufacturing an n-channel transistor, characterized in that to perform. 제 1 항에 있어서, 이온주입은 100kev∼500kev 이내의 에너지 범위에서 5×1012∼1×1014/cm2이내의 양을 주입함을 특징으로 하는 앤-채널 트랜지스터 제조방법.The method of claim 1, wherein the ion implantation injects an amount of 5 × 10 12 to 1 × 10 14 / cm 2 within an energy range of 100 to 500 kev. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900005062A 1990-04-12 1990-04-12 Manufacturing method of transistor KR930001900B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900005062A KR930001900B1 (en) 1990-04-12 1990-04-12 Manufacturing method of transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900005062A KR930001900B1 (en) 1990-04-12 1990-04-12 Manufacturing method of transistor

Publications (2)

Publication Number Publication Date
KR910019256A true KR910019256A (en) 1991-11-30
KR930001900B1 KR930001900B1 (en) 1993-03-19

Family

ID=19297938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900005062A KR930001900B1 (en) 1990-04-12 1990-04-12 Manufacturing method of transistor

Country Status (1)

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KR (1) KR930001900B1 (en)

Also Published As

Publication number Publication date
KR930001900B1 (en) 1993-03-19

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