KR910015503A - 유리상에 옥시탄화규소 층을형성시키는 방법, 이로부터 수득된 유리 및 반도체 층을 포함하는 글레이징에서의 이의 용도. - Google Patents

유리상에 옥시탄화규소 층을형성시키는 방법, 이로부터 수득된 유리 및 반도체 층을 포함하는 글레이징에서의 이의 용도. Download PDF

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KR910015503A
KR910015503A KR1019910001948A KR910001948A KR910015503A KR 910015503 A KR910015503 A KR 910015503A KR 1019910001948 A KR1019910001948 A KR 1019910001948A KR 910001948 A KR910001948 A KR 910001948A KR 910015503 A KR910015503 A KR 910015503A
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glass
layer
glazing
semiconductor layer
silicon oxycarbide
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KR1019910001948A
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English (en)
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소비네 뱅상
우다르 장-프랑소와
프란시스코 코보 에딜라 안젤
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에스. 르 바게레즈
생-고뱅 비뜨라쥬 엥떼르나시오날
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Publication of KR910015503A publication Critical patent/KR910015503A/ko

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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
    • C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3429—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating
    • C03C17/3441—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials at least one of the coatings being a non-oxide coating comprising carbon, a carbide or oxycarbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/21—Oxides
    • C03C2217/213—SiO2
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/28—Other inorganic materials
    • C03C2217/282—Carbides, silicides
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase
    • C03C2218/152—Deposition methods from the vapour phase by cvd

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음

Description

유리상에 옥시탄화규소 층을형성시키는 방법.이로부터 수득된 유리 및 반도체 층을 포함하는 글레이징에서의 이의 용도.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (19)

  1. 750℃이하로 가열한 유리 지지체상에, 증기상침착(CVD)에 의해 실란, 포화 탄화수소 및 산화제를 포함하는 기체 혼합물을 분무시킴을 특징으로 하여 옥시탄화규소 층을 형성시키는 방법.
  2. 제1항에 있어서, 탄화수소가 탄소수 1내지 4의 포화 지방족 탄화수소인 방법.
  3. 제2항에 잇어서, 탄화수소가 프로판 또는 부탄인 방법.
  4. 제1항 내지 3항 중 어느 한 항에 있어서, 산화제가 이산화탄소 또는 산화질로(I)인 방법.
  5. 제1항 내지 3항 중 어느 한 항에 있어서, 실란에 대한 포화 탄화수소의 용적비가 2:1 내지 5:1인 방법.
  6. 제1항 내지 3항 중 어느 한 항에 있어서, 실란에 대한 이산화탄소의 용적비가 10:1 내지 20:1인 방법.
  7. 제1항 내지 3항 중 어느 한 항에 있어서, 실란에 대한 산화질소(I)의 용적비가 1:1 내지 5:1인 방법.
  8. 제1항 내지 6항 중 어느 한 항에 있어서, 포화탄화수소에 대한 이산화탄소의 용적비가 2:1 내지 10:1인 방법.
  9. 제1항 내지 5항 및 제7항 중 어느 한 항에 있어서, 포화 탄화수소에 대한 산화질소(I)의 용적비가 0.5:1 내지 3:1인 방법.
  10. 제1항 내지 9항 중 어느 한 항에 있어서, 옥시탄화규소 층을 플로우트 노(float furnace)내에서 형성시키는 방법.
  11. 유리 지지체 및 두께가 50내지 100mm이고 굴절률이 1.6 내지 1.9인 옥시탄화규소 층을 포함하는, 제1항 내지 10항 중 어느 한 항에 따른 방법에 의해 수득된 유리.
  12. 제11항에 있어서, 옥시탄화규소 층상에 형성된, 두께가 100내지 800nm인 투명한 반도체 박층을 포함하는 유리.
  13. 제12항에 있어서, 반도체 층이 불소-도핑(dopping)된 산화 주석층, 주석-도핑된 산화인듐 층 또는 알루미늄 또는 인듐-도핑된 산화아연 층인 유리.
  14. 두께가 약 300nm이고 복사율이 0.17 내지 0.20인 불소-도핑된 산화주석 반도체 층을 포함하는 제13항에 따른 유리의 저복사 글레이징(glazing)으로서의 용도.
  15. 두께가 180nm이고 복사율이 0.11인 주석-도핑된 산화인듐 반도체 층을 포함하는 제13항에 따른 유리의 저복사 글레이징으로서의 용도.
  16. 광학전자 장치용 기질로서의 제12항 또는 13항에 따른 유리의 용도.
  17. 액정 디스플레이(display)용으로 사용될 수 있는, 알칼리성 이온에 대해 차단 특성을 갖는 기질로서의 제12항 또는 13항에 따른 유리의 용도.
  18. 반도체 층과 접촉하도록 위치시킨 플라스틱 중합체 시트(예 : 폴리우레탄)및 글레이징의 상하 가장자리를 따라 위치한 전류 공급 도선을 포함하는 가열된 적층 글레이징으로서의 제 12항 또는 13항에 따른 유리의 용도.
  19. 반도체 층과 접촉하도록 위치시킨, 유리 플레이트와 연결된 PVB, PVC 또는 PU형의 삽입된 플라스틱 중합체 시트 및 글레이징의 상하 가장자리를 따라 위치시킨 전류 공급 도선을 포함하는 가열된 적층 글레이징으로서의 제12항 또는 13항에 따른 유리의 용도.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910001948A 1990-02-07 1991-02-05 유리상에 옥시탄화규소 층을형성시키는 방법, 이로부터 수득된 유리 및 반도체 층을 포함하는 글레이징에서의 이의 용도. KR910015503A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9001390 1990-02-07
FR9001390A FR2657866A1 (fr) 1990-02-07 1990-02-07 Procede de formation d'une couche d'oxycarbure de silicium sur du verre, verre obtenu et son utilisation dans des vitrages a couche semi-conductrice.

Publications (1)

Publication Number Publication Date
KR910015503A true KR910015503A (ko) 1991-09-30

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KR1019910001948A KR910015503A (ko) 1990-02-07 1991-02-05 유리상에 옥시탄화규소 층을형성시키는 방법, 이로부터 수득된 유리 및 반도체 층을 포함하는 글레이징에서의 이의 용도.

Country Status (4)

Country Link
EP (1) EP0441705A1 (ko)
JP (1) JPH04214047A (ko)
KR (1) KR910015503A (ko)
FR (1) FR2657866A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2684095B1 (fr) * 1991-11-26 1994-10-21 Saint Gobain Vitrage Int Produit a substrat en verre muni d'une couche a basse emissivite.
NO931606L (no) * 1992-05-26 1993-11-29 Saint Gobain Vitrage Vindusplate med en funksjonell film
FR2701474B1 (fr) * 1993-02-11 1995-03-31 Saint Gobain Vitrage Int Vitrage muni d'une couche fonctionnelle.
FR2704545B1 (fr) * 1993-04-29 1995-06-09 Saint Gobain Vitrage Int Vitrage muni d'une couche fonctionnelle conductrice et/ou basse-émissive.
US5723172A (en) * 1994-03-11 1998-03-03 Dan Sherman Method for forming a protective coating on glass
US5665424A (en) * 1994-03-11 1997-09-09 Sherman; Dan Method for making glass articles having a permanent protective coating
FR2866643B1 (fr) * 2004-02-24 2006-05-26 Saint Gobain Substrat, notamment verrier, a surface hydrophobe, avec une durabilite amelioree des proprietes hydrophobes
WO2017005621A1 (en) * 2015-07-07 2017-01-12 Agc Glass Europe Glass substrate with increased weathering and chemcial resistance

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2545983B1 (fr) * 1980-09-10 1987-10-30 Air Liquide Procede d'opalisation d'ampoules d'eclairage par voie gazeuse
JPS60166471A (ja) * 1984-02-10 1985-08-29 Hitachi Ltd 感熱記録ヘツド
GB8630918D0 (en) * 1986-12-24 1987-02-04 Pilkington Brothers Plc Coatings on glass
GB8814922D0 (en) * 1988-06-23 1988-07-27 Pilkington Plc Coatings on glass

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EP0441705A1 (fr) 1991-08-14
FR2657866A1 (fr) 1991-08-09
JPH04214047A (ja) 1992-08-05

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