KR910013573A - Method and apparatus for forming via hole - Google Patents

Method and apparatus for forming via hole Download PDF

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Publication number
KR910013573A
KR910013573A KR1019890019448A KR890019448A KR910013573A KR 910013573 A KR910013573 A KR 910013573A KR 1019890019448 A KR1019890019448 A KR 1019890019448A KR 890019448 A KR890019448 A KR 890019448A KR 910013573 A KR910013573 A KR 910013573A
Authority
KR
South Korea
Prior art keywords
via hole
electron gun
forming
grid assembly
insulating layer
Prior art date
Application number
KR1019890019448A
Other languages
Korean (ko)
Inventor
윤기천
Original Assignee
김정배
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김정배, 삼성전관 주식회사 filed Critical 김정배
Priority to KR1019890019448A priority Critical patent/KR910013573A/en
Publication of KR910013573A publication Critical patent/KR910013573A/en

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Abstract

내용 없음.No content.

Description

비어홀 형성방법 및 장치Method and apparatus for forming via hole

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 비어홀 형성장치를 나타낸 도면,1 is a view showing a via hole forming apparatus of the present invention,

제2도는 비어홀이 형성된 박막트랜지스터의 평면도.2 is a plan view of a thin film transistor having a via hole formed therein.

Claims (2)

액정TV용 박막 트랜지스터 제조시 드레인전극과 화소전극을 접촉시키기 위하여 화소전극 상부의 절연층을 소정의 크기로 에칭하여 비어홀을 형성하는 방법에 있어서, 전자총에서 방사된 전자빔을 그리도 어셈블리로 가속, 편향시키고, 프로그램 로직회로로 전자빔을 구사하여 절연층을 에칭하는 비어홀 형성방법.A method of forming a via hole by etching an insulating layer on an upper part of a pixel electrode to a predetermined size in order to contact a drain electrode and a pixel electrode in manufacturing a thin film transistor for a liquid crystal TV. And forming a via hole using an electron beam with a program logic circuit to etch the insulating layer. 전자총(30)의 양단에 마그네트(31)이 실치되고, 전자총(30)과 일정간격을 두고 그리드 어셈블리(32)가 설치되며, 진공챔버(33) 내부에 그리드 어셈블리(32)가 설치되며, 진공챔버(33) 내부에 그리드 어셈블리(32)와 일정 간격을 두고 기판(36)이 설치되고, 전자총(30)에 프로그램 로직회로(37)와 파워 서플라이(38) 연결되어 구성되는 것을 특징으로 하는 비어홀 형성장치.The magnets 31 are mounted on both ends of the electron gun 30, the grid assembly 32 is installed at a predetermined interval from the electron gun 30, the grid assembly 32 is installed inside the vacuum chamber 33, and the vacuum is mounted. The via hole, characterized in that the substrate 36 is installed in the chamber 33 at regular intervals from the grid assembly 32, and the program logic circuit 37 and the power supply 38 are connected to the electron gun 30. Forming device. ※ 참고사항 : 최초출된 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the original contents.
KR1019890019448A 1989-12-23 1989-12-23 Method and apparatus for forming via hole KR910013573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890019448A KR910013573A (en) 1989-12-23 1989-12-23 Method and apparatus for forming via hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890019448A KR910013573A (en) 1989-12-23 1989-12-23 Method and apparatus for forming via hole

Publications (1)

Publication Number Publication Date
KR910013573A true KR910013573A (en) 1991-08-08

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ID=67662540

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890019448A KR910013573A (en) 1989-12-23 1989-12-23 Method and apparatus for forming via hole

Country Status (1)

Country Link
KR (1) KR910013573A (en)

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