KR910005482A - Mes fet의 제조방법 - Google Patents
Mes fet의 제조방법Info
- Publication number
- KR910005482A KR910005482A KR1019900012284A KR900012284A KR910005482A KR 910005482 A KR910005482 A KR 910005482A KR 1019900012284 A KR1019900012284 A KR 1019900012284A KR 900012284 A KR900012284 A KR 900012284A KR 910005482 A KR910005482 A KR 910005482A
- Authority
- KR
- South Korea
- Prior art keywords
- mes fet
- fet manufacturing
- manufacturing
- mes
- fet
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
- H01L21/26553—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1208507A JPH0372634A (ja) | 1989-08-11 | 1989-08-11 | Mes fetの製造方法 |
JP1-208507 | 1989-08-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910005482A true KR910005482A (ko) | 1991-03-30 |
KR940006710B1 KR940006710B1 (ko) | 1994-07-25 |
Family
ID=16557304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900012284A KR940006710B1 (ko) | 1989-08-11 | 1990-08-10 | Mes fet의 제조방법 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0412502A1 (ko) |
JP (1) | JPH0372634A (ko) |
KR (1) | KR940006710B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100350309B1 (ko) * | 1999-03-05 | 2002-08-24 | 주식회사 파워넷 | 녹음부 및 재생부 분리형 보이스 메모장치 및 그 녹음 및 재생방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2694920B1 (fr) * | 1992-08-20 | 1994-10-28 | Oreal | Dispositif pour conserver séparés l'un de l'autre au moins deux produits et pour effectuer leur mélange à un instant souhaité. |
KR20010106874A (ko) * | 2000-05-23 | 2001-12-07 | 정일구 | 순간 혼합 뚜껑 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2631873C2 (de) * | 1976-07-15 | 1986-07-31 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand |
US4344980A (en) * | 1981-03-25 | 1982-08-17 | The United States Of America As Represented By The Secretary Of The Navy | Superior ohmic contacts to III-V semiconductor by virtue of double donor impurity |
US4505023A (en) * | 1982-09-29 | 1985-03-19 | The United States Of America As Represented By The Secretary Of The Navy | Method of making a planar INP insulated gate field transistor by a virtual self-aligned process |
EP0112657B1 (en) * | 1982-11-29 | 1990-06-20 | Fujitsu Limited | Field effect transistor and process for fabricating it |
JPS6010787A (ja) * | 1983-06-30 | 1985-01-19 | Sanyo Electric Co Ltd | シヨツトキ−障壁型fetの製造方法 |
JPS6032364A (ja) * | 1983-08-01 | 1985-02-19 | Toshiba Corp | 半導体装置の製造方法 |
JPS6086866A (ja) * | 1983-10-19 | 1985-05-16 | Matsushita Electronics Corp | 電界効果トランジスタおよびその製造方法 |
-
1989
- 1989-08-11 JP JP1208507A patent/JPH0372634A/ja active Pending
-
1990
- 1990-08-07 EP EP90115162A patent/EP0412502A1/en not_active Withdrawn
- 1990-08-10 KR KR1019900012284A patent/KR940006710B1/ko not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100350309B1 (ko) * | 1999-03-05 | 2002-08-24 | 주식회사 파워넷 | 녹음부 및 재생부 분리형 보이스 메모장치 및 그 녹음 및 재생방법 |
Also Published As
Publication number | Publication date |
---|---|
JPH0372634A (ja) | 1991-03-27 |
EP0412502A1 (en) | 1991-02-13 |
KR940006710B1 (ko) | 1994-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20040709 Year of fee payment: 11 |
|
LAPS | Lapse due to unpaid annual fee |