KR910005399A - Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device - Google Patents
Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device Download PDFInfo
- Publication number
- KR910005399A KR910005399A KR1019890012478A KR890012478A KR910005399A KR 910005399 A KR910005399 A KR 910005399A KR 1019890012478 A KR1019890012478 A KR 1019890012478A KR 890012478 A KR890012478 A KR 890012478A KR 910005399 A KR910005399 A KR 910005399A
- Authority
- KR
- South Korea
- Prior art keywords
- polycrystalline silicon
- buried contact
- manufacturing
- silicon structure
- semiconductor device
- Prior art date
Links
Landscapes
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 매몰접촉장과 다결정 실리콘 구조를 갖는 반도체 소자를 제조순서대로 나타낸 단면도이고,2 is a cross-sectional view showing a semiconductor device having a buried contact field and a polycrystalline silicon structure of the present invention in the order of manufacture;
제3도는 제1도 및 제2도에 따른 반도체 소자를 비교하여 나타낸 평면도 및 측면도이다.3 is a plan view and a side view showing a comparison of semiconductor devices according to FIGS. 1 and 2.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890012478A KR910005399A (en) | 1989-08-31 | 1989-08-31 | Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890012478A KR910005399A (en) | 1989-08-31 | 1989-08-31 | Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910005399A true KR910005399A (en) | 1991-03-30 |
Family
ID=67661621
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890012478A KR910005399A (en) | 1989-08-31 | 1989-08-31 | Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR910005399A (en) |
-
1989
- 1989-08-31 KR KR1019890012478A patent/KR910005399A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890003038A (en) | Semiconductor manufacturing process with pedestal structure | |
KR910007103A (en) | Method for manufacturing self-aligned contacts in semiconductor devices | |
KR950007141A (en) | Semiconductor thin film transistor manufacturing method | |
KR960042931A (en) | Manufacturing Method of Semiconductor Device Having SOI Structure | |
KR910005399A (en) | Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
KR960019768A (en) | Transistor Manufacturing Method | |
KR100258577B1 (en) | Semiconductor device manufacturing method | |
KR970054268A (en) | Manufacturing Method of Semiconductor SOH Element | |
KR960039430A (en) | Semiconductor device having high voltage MOS transistor and manufacturing method thereof | |
KR970008422A (en) | Manufacturing method of semiconductor device | |
KR950021781A (en) | Method for forming gate sidewall spacer of semiconductor device | |
KR960043052A (en) | Method for manufacturing semiconductor device having LDD (Lightly Doped Drain) structure | |
KR970023885A (en) | Manufacturing method of MOS field effect transistor | |
KR970030631A (en) | Device Separation Method of Semiconductor Device | |
KR900015320A (en) | Trench fine pattern formation method | |
KR960015813A (en) | MOSFET formation method | |
KR890005883A (en) | Manufacturing Method of Semiconductor Device | |
KR960035902A (en) | Low doping drain thin film transistor manufacturing method | |
KR960002704A (en) | Gate electrode formation method of transistor | |
KR970053843A (en) | Semiconductor device and manufacturing method thereof | |
KR950019939A (en) | Contact Forming Method of Semiconductor Device | |
KR910013260A (en) | DRAM manufacturing method | |
KR920020606A (en) | Semiconductor device and manufacturing method | |
KR930003366A (en) | Device Separation Method of Semiconductor Device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |