KR910005399A - Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device - Google Patents

Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device Download PDF

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Publication number
KR910005399A
KR910005399A KR1019890012478A KR890012478A KR910005399A KR 910005399 A KR910005399 A KR 910005399A KR 1019890012478 A KR1019890012478 A KR 1019890012478A KR 890012478 A KR890012478 A KR 890012478A KR 910005399 A KR910005399 A KR 910005399A
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KR
South Korea
Prior art keywords
polycrystalline silicon
buried contact
manufacturing
silicon structure
semiconductor device
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Application number
KR1019890012478A
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Korean (ko)
Inventor
박성모
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019890012478A priority Critical patent/KR910005399A/en
Publication of KR910005399A publication Critical patent/KR910005399A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

내용 없음No content

Description

반도체 소자의 매몰접촉장과 다결정 실리콘 구조의 제조방법Method of manufacturing a buried contact field and a polycrystalline silicon structure of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도는 본 발명의 매몰접촉장과 다결정 실리콘 구조를 갖는 반도체 소자를 제조순서대로 나타낸 단면도이고,2 is a cross-sectional view showing a semiconductor device having a buried contact field and a polycrystalline silicon structure of the present invention in the order of manufacture;

제3도는 제1도 및 제2도에 따른 반도체 소자를 비교하여 나타낸 평면도 및 측면도이다.3 is a plan view and a side view showing a comparison of semiconductor devices according to FIGS. 1 and 2.

Claims (2)

반도체 소자의 메몰접촉장과 다결정 실리콘 구조의 제조방법에 있어서, P형 기판위에 게이트 산화막을 형성하고, 매몰층 마스크로 감광제를 현상한후 N형 이온을 주입하고, 상기한 매몰층 마스크 보다 접촉 크기가 작은추가 매몰층 마스크로 감광제를 현상한 후 게이트 산화막을 습식 식각법에 의해 식각하여 매몰접촉장을 형성하고, 상기한 마스크를 제거한 후 다결정 실리콘을 증착하고 N형 불순물을 도핑한 후 다결정 실리콘 마스크를 사용하여 패턴을 형성하는 것을 특징으로 하는 매몰 접촉창과 다결정 실리콘 구조의 제조방법.In the method of manufacturing a buried contact field of a semiconductor device and a polycrystalline silicon structure, a gate oxide film is formed on a P-type substrate, a photoresist is developed using an investment layer mask, and then N-type ions are implanted, and the contact size is larger than that of the investment layer mask. After the photoresist is developed with a buried layer mask, the gate oxide film is etched by a wet etching method to form a buried contact field. After removing the mask, the polycrystalline silicon is deposited and the N-type impurity is doped. Method of manufacturing a buried contact window and a polycrystalline silicon structure, characterized in that to form a pattern using. 제1항에 있어서, 매몰 접촉창이 다결정 실리콘층 보다 작게 구성되는 것을 특징으로 하는 제조방법.The method of claim 1 wherein the buried contact window is smaller than the polycrystalline silicon layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890012478A 1989-08-31 1989-08-31 Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device KR910005399A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890012478A KR910005399A (en) 1989-08-31 1989-08-31 Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890012478A KR910005399A (en) 1989-08-31 1989-08-31 Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device

Publications (1)

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KR910005399A true KR910005399A (en) 1991-03-30

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KR1019890012478A KR910005399A (en) 1989-08-31 1989-08-31 Method of manufacturing a buried contact window and a polycrystalline silicon structure of a semiconductor device

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KR (1) KR910005399A (en)

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