KR910000303A - 대형 또는 비정형 다이어몬드 연마층용 툴 - Google Patents

대형 또는 비정형 다이어몬드 연마층용 툴 Download PDF

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Publication number
KR910000303A
KR910000303A KR1019900008733A KR900008733A KR910000303A KR 910000303 A KR910000303 A KR 910000303A KR 1019900008733 A KR1019900008733 A KR 1019900008733A KR 900008733 A KR900008733 A KR 900008733A KR 910000303 A KR910000303 A KR 910000303A
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KR
South Korea
Prior art keywords
tool
diamond
substrate
sheet
diamond sheet
Prior art date
Application number
KR1019900008733A
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English (en)
Inventor
도날드 기글 폴
얼 슬루츠 데이비드
Original Assignee
아더 엠.킹
제너럴 일렉트릭 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아더 엠.킹, 제너럴 일렉트릭 캄파니 filed Critical 아더 엠.킹
Publication of KR910000303A publication Critical patent/KR910000303A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
    • B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Ceramic Products (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)

Abstract

내용 없음

Description

대형 또는 비정형 다이어몬드 연마층용 툴
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 장치의 개략적인 단면도,
제2도는 본 발명에 따른 장치의 소조립체의 개략적인 단면도.

Claims (13)

  1. 기판에 브레이징된 완전한 밀도를 가진 다이어몬드 시트를 구비한 것을 특징으로 하는 툴.
  2. 제1항에 있어서, 다이어몬드 시트는 화학증착법에 의해 제조된 것을 특징으로 하는 툴.
  3. 제2항에 있어서, 다이어몬드 시트가 적어도 약 0.1mm의 두께를 가진것을 특징으로 하는 툴.
  4. 제3항에 있어서, 다이어몬드의 가장긴 치수가 적어도 약 30mm인 것을 특징으로 하는 툴.
  5. 제4항에 있어서, 다이어몬드가 약 0.1mm내지 약 1.0mm의 두께를 가지며 적어도 약 50mm의 가장긴 치수를 가진것을 특징으로 하는 툴.
  6. 제1항에 있어서, 기판이 시멘트 결합된 카바이드인 것을 특징으로 하는 툴.
  7. 제6항에 있어서, 다이어몬드시트가 카바이드 형성 요소를 포함한 브레이즈 합금과 함께 시멘트 결합된 카바이드 기판에 브레이징된 것을 특징으로 하는 툴.
  8. 제7항에 있어서, 카바이드 형성 성분은 크롬 또는 티탄인 것을 특징으로 하는 툴.
  9. 카바이드 형성 요소를 가진 브레이즈 합금과 함께 시멘트 결합된 카바이드 기판에 브레이징된 화학증착법에 의해 제조된 완전한 밀도를 가지며 열적으로 안정된 다이어몬드 시트로 구성된 툴로서, 상기 다이어몬드 시트가 적어도 약 0.1mm의 두께와 적어도 약 50mm의 가장긴 치수를 가진 것을 특징으로 하는 툴.
  10. 제9항에 있어서, 툴이 비정형의 형상을 가진 것을 특징으로 하는 툴.
  11. 툴을 제조하는 방법으로서, (1) 브레이징될 기판의 치수와 대략적으로 동일한 치수로 저합도포법에 의해 제조된 다이어몬드시트를 가공하는 단계와, (2) 상기 다이어몬드 시트와 기판 사이에 브레이즈 합금을 도포하는 단계와, (3) 상기 브레이즈 합금을 적어도 부분적으로 용융시키기에 충분한 온도까지 (2)단계 이후에 가열하는 단계와, (4) (3)단계의 합성물질을 냉각하는 단계와, (5) 실제적으로 동일한 치수로 상기 합성물질의기판 및/또는 다이어몬드 층을 가공하는 단계를 구비하는 것을 특징으로 하는 툴 제조방법.
  12. 제11항에 있어서, (3)단계가 진공로내에서 달성되는 것을 특징으로 하는 툴 제조방법.
  13. 제11항에 있어서, 화학증착법에 의해 표면에 다이어몬드의 시트를 성장시키고 (1)단계 이전에 상기 진공로로부터 다이어몬드 시트를 제거하는 단계를 구비한 것을 특징으로 하는 툴 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900008733A 1989-06-15 1990-06-14 대형 또는 비정형 다이어몬드 연마층용 툴 KR910000303A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36682389A 1989-06-15 1989-06-15
US366,823 1989-06-15

Publications (1)

Publication Number Publication Date
KR910000303A true KR910000303A (ko) 1991-01-29

Family

ID=23444699

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900008733A KR910000303A (ko) 1989-06-15 1990-06-14 대형 또는 비정형 다이어몬드 연마층용 툴

Country Status (6)

Country Link
EP (1) EP0402671A1 (ko)
JP (1) JPH0369568A (ko)
KR (1) KR910000303A (ko)
CA (1) CA2012821A1 (ko)
IE (1) IE901296A1 (ko)
ZA (1) ZA901817B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2651947B2 (ja) * 1990-03-26 1997-09-10 株式会社半導体エネルギー研究所 ダイヤモンド薄膜コーティング部材およびダイヤモンド薄膜コーティング方法
JP2840788B2 (ja) * 1990-05-30 1998-12-24 株式会社半導体エネルギー研究所 ダイヤモンド成分を含む表面保護膜
EP0492160A1 (en) * 1990-12-20 1992-07-01 General Electric Company Symmetric CVD diamond articles and method of their preparation
US5500248A (en) * 1994-08-04 1996-03-19 General Electric Company Fabrication of air brazable diamond tool
US5529805A (en) * 1994-09-22 1996-06-25 General Electric Company Method for manufacturing a diamond article
US5626909A (en) * 1994-12-07 1997-05-06 General Electric Company Fabrication of brazable in air tool inserts
KR101021461B1 (ko) 2002-07-26 2011-03-16 미쓰비시 마테리알 가부시키가이샤 초경합금제 부재와 다이아몬드제 부재의 접합 구조 및접합 방법, 굴삭 공구의 절단편, 절단 부재, 및 굴삭 공구
JP2008006507A (ja) * 2006-06-26 2008-01-17 Ebara Corp ダイヤモンド研磨工具、ダイヤモンド研磨工具の作成方法、ダイヤモンド研磨工具の再生方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4224380A (en) * 1978-03-28 1980-09-23 General Electric Company Temperature resistant abrasive compact and method for making same
US4247305A (en) * 1979-07-27 1981-01-27 General Electric Company Abrasive structures and methods of their preparation
US4403015A (en) * 1979-10-06 1983-09-06 Sumitomo Electric Industries, Ltd. Compound sintered compact for use in a tool and the method for producing the same
US4380471A (en) * 1981-01-05 1983-04-19 General Electric Company Polycrystalline diamond and cemented carbide substrate and synthesizing process therefor
SE457537B (sv) * 1981-09-04 1989-01-09 Sumitomo Electric Industries Diamantpresskropp foer ett verktyg samt saett att framstaella densamma
US4534773A (en) * 1983-01-10 1985-08-13 Cornelius Phaal Abrasive product and method for manufacturing
SE442305B (sv) * 1984-06-27 1985-12-16 Santrade Ltd Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen
SE453474B (sv) * 1984-06-27 1988-02-08 Santrade Ltd Kompoundkropp belagd med skikt av polykristallin diamant
US4900628A (en) * 1986-07-23 1990-02-13 Sumitomo Electric Industries, Ltd. Gaseous phase synthesized diamond and method for synthesizing same

Also Published As

Publication number Publication date
IE901296A1 (en) 1991-01-02
IE901296L (en) 1990-12-15
ZA901817B (en) 1991-04-24
JPH0369568A (ja) 1991-03-25
CA2012821A1 (en) 1990-12-15
EP0402671A1 (en) 1990-12-19

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