KR900701042A - 단축 도전 물품의 이용 - Google Patents
단축 도전 물품의 이용Info
- Publication number
- KR900701042A KR900701042A KR1019890701828A KR890701828A KR900701042A KR 900701042 A KR900701042 A KR 900701042A KR 1019890701828 A KR1019890701828 A KR 1019890701828A KR 890701828 A KR890701828 A KR 890701828A KR 900701042 A KR900701042 A KR 900701042A
- Authority
- KR
- South Korea
- Prior art keywords
- conductive
- article
- substrate
- connection
- solder
- Prior art date
Links
- 229910000679 solder Inorganic materials 0.000 claims description 15
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims 33
- 239000000758 substrate Substances 0.000 claims 31
- 239000000463 material Substances 0.000 claims 26
- 238000000034 method Methods 0.000 claims 13
- 239000002184 metal Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 7
- 239000010931 gold Substances 0.000 claims 7
- 229910052737 gold Inorganic materials 0.000 claims 7
- 238000004377 microelectronic Methods 0.000 claims 3
- 239000004642 Polyimide Substances 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000005755 formation reaction Methods 0.000 claims 2
- 229920001721 polyimide Polymers 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 claims 1
- -1 4,4'-diaminobiphenyl ether Chemical compound 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 claims 1
- 150000004683 dihydrates Chemical class 0.000 claims 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 1
- 238000007654 immersion Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 238000000608 laser ablation Methods 0.000 claims 1
- 238000006116 polymerization reaction Methods 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 208000037062 Polyps Diseases 0.000 description 1
Classifications
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- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/02—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating by means of a press ; Diffusion bonding
- B23K20/023—Thermo-compression bonding
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- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부도면에서 제 FC 1도는 공지된 "폴리 칩" 조립체의 땜납 범프된 칩을 나타낸다.
제 FC 2도는 본 발명에 따른 단축 도전 물품에 본딩되기 전의 "폴립 칩" 조립체를 나타낸다.
제 FC 3도는 하이브리드 회로보오드 또는 멀티칩모듈에 본딩되기 전에, 열압축에 의해 "폴리 칩"에 본딩된 제 2도의 단축도전 물품을 나타낸다.
Claims (42)
- (a) 제 1의 기판상의 연결위치를 제 2의 기판상의 상응하는 연결위치와 면대면으로 정렬하고, (b) 각 쌍의 대향하는 연결위치간에 정렬되는 관통구멍을 적어도 하나 갖는 절연시이트 재료로 구성되는 단축도전 물품을 대향하는 기판 사이에 위치시키고, 그리고 (c) 관통구멍에 있는 도전 재료의 단부들을 각각의 상응하는 대향연결위치쌍에 본딩하는 것으로 이루어지며, 상기 관통구멍들은 시이트 재료의 주표면들 간에 고전통로를 제공하고 상기 주표면들을 넘어 돌출하는 도전 재료로 내부적으로 도금되어 있으며, 양 연결위치에 본딩될 수 있는 본딩재료를 포함하고, 각 쌍의 연결위치 중 하나 또는 둘 다는 본딩 전에 사실상 가용성 본딩재료가 없는 것을 특징으로 하는 제 1의 기판상의 연결위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 제 1항에 있어서, 도전재료는 각 관통구멍의 도금된 금속 튜브를 포함하는 것을 특징으로 하는 제 1의 기판상의 연결위치와 제 2의 기판상의 상응하는 연결 제 1의 기판 상의 연결위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 제 1항 또는 제 2항에 있어서, 본딩재료는 각 관통구멍의 적어도 한단부에 있는 땜납인 것을 특징으로 하는 제 1의 기판상의 연결위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 제 1항 또는 제 2항에 있어서, 본딩재료는 각 관통구멍의 적어도 한단부에 있는 금인 것을 특징으로 하는 제 1의 기판상의 연결위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 제 4항에 있어서, 상기 금은 적어도 1.5 바람직하게는 적어도 2마이크로미터의 두께를 갖는 것을 특징으로 하는 제 1의 기판상의 연결위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 제 1항 내지 제 5항 중 어느 항에 있어서, 도전재료는 열압축 본딩에 의해 연결위치에 본딩되는 것을 특징으로 하는 제 1의 기판상의 연결위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 어떤 전기한 항에 있어서, 단축 도전 물품은 각 쌍의 대향하는 연결위치 사이에 단지 하나의 도전재료를 포함하는 관통구멍만을 갖는 것을 특징으로 하는 제 1의 기판상의 연결 위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 제 1항 내지 제 6항 중 어느 항에 있어서, 단축 도전 물품은 각 쌍의 대향하는 연결위치 간에 도전재료를 포함하는 관통구멍을 하나 이상 갖는 것을 특징으로 하는 제 1의 기판상의 연결위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 어떤 전기한 항에 있어서, 단축도전 물품은 대향하는 연결위치쌍 사이에 정렬되지 않는 시이트재료 구역에 도전재료를 포함하는 관통구멍을 갖는 것을 특징으로 하는 제 1의 기판상의 연결위치와 제 2의 기판상의 상응하는 연결위치 사이에 영구적인 전기적 연결을 형성하는 방법.
- 제 1의 기판이 제 1항 내지 제 9항 중 어느 항에 따른 방법에 의해 제 2의 기판에 적으적으로 연결되는 것으로 구성되는 어셈블리.
- 제 10항에 있어서, 상기 기판 중 적어도 하나는 초소형회로 칩인 것을 특징으로 하는 어셈블리.
- (a) 지지재료의 에지를 넘어 돌출한 도체의 지지되지 않는 단부는 연결이 형성되야 할 직접회로 마이크로일렉트로닉 장치상의 연결위치에 개별적으로 정렬되고, (b) 시이트재료의 주표면 구역들 중 한 표면 구역으로부터 다른 표면 구역으로 도전통로를 제공하는 도전재료를 포함하는 관통구멍을 갖는 절연시이트 재료로 구성되는 단축 도전 물품은 각 연결위치와 각 연결위치와 정렬되는 도체단부 사이에 정렬되는 적어도 하나의 그러한 통로의 각각의 단부에 위치되고, (c) 그렇게 정렬된 통로(들)의 단부는 각각 연결 위치에 그리고 도체단부에 본딩되는 것으로 이루어지는 것을 특징으로 하는 직접회로 마이크로일렉트로닉 장치상의 연결위치 어레이와 지지재료의 에지를 넘어 돌출한 도체의 지지되지 않은 단부 어레이를 갖고 필름 또는 테이프 지지재료에 지지되는 전기도체 사이에 전기적 연결을 형성하는 방법.
- 절연 시이트 재료와 대립된 주표면 구역간에 전기적으로 분리된 도전통로를 제공하는(바람직하게 상기 시이트 재료의 구멍 내에 밀착 고정되는) 도전 재료로 구성되고, (바람직하게, 시이트 표면구역들 중 한 표면 구역을 넘어 돌출한) 상기 통로의 한단부에 있는 도전재료는 열압축에 본딩될 수 있고, 그리고 상기 통로의 다른 단부에 있는 도전재료는 땜납에 의해 본딩될 수 있는 것을 특징으로 하는 이방 도전 물품.
- 제 13항에 있어서, 이방 도전 물품은 사실상 단축 도전성인 것을 특징으로 하는 이방 도전 물품.
- 제 13항에 또는 제 14항에 있어서, 시이트 재료는 도전재료를 포함하는 관통구멍을 갖는 것을 특징으로 하는 이방 도전 물품.
- 제 15항에 있어서, 각 관통구멍의 도전재료는 나머지 관통구멍의 도전재료로부터 전기적으로 분리되어 있는 것을 특징으로 하는 이방 도전 물품.
- 제 14항 또는 제 15항에 있어서, 관통구멍들은 금속 관형성물로 내부적으로 도금되는 것을 특징으로 하는 이방도전 물품.
- 제 13항 내지 제 17항 중 어느 항에 있어서, 열압축 본딩 가능한 재료는 금 금속으로 구성되고, 땜납본딩 가능한 재료는 적어도 하나의 다른 금속으로 구성되는 것을 특징으로 하는 이방 도전 물품.
- 제 13항 내지 제 18항 중 어느 항에 있어서, 상기 통로의 양단부에 금 금속을 포함하는 것을 특징으로 하는 이방 도전 물품.
- 제 18항 또는 제 19항에 있어서, 도전통로는 열압축 본딩될 수 없는 적어도 하나의 금속을 포함하고, 한 단부 또는 양단부에 적어도 2마이크로미터의 두께를 갖는 금 금속을 보유하는 것을 특징으로 하는 이방 도전 물품.
- 제 13항 내지 제 20항 중 어느 항에 있어서, 도전재료는 통로의 땜납 본딩가능 단부를 본딩하기 위한 땜납을 보유하는 것을 특징으로 하는 이방 도전 물품.
- 제 13항 내지 제 21항 중 어느항에 있어서, 땜납 본딩가능 도전재료는 인접한 시이트 표면구역을 넘어 돌출하는 것을 특징으로 하는 이방 도전 물품.
- 제 13항 내지 제 21항 중 어느 항에 있어서, 리세스보다 더 넓은 도전부재 표면이 리세스 위에 놓이기 위해 리세스를 포함하는 시이트표면과 접촉될 경우 도전부재와의 전기접촉이 형성되는 것을 피하기 위해 땜납본딩가능 도전재료가 시이트 표면의 훨씬 아래에서 끝난다는 점에서, 땜납본딩 가능 도전재료는 시이트표면 레벨 아래의 리세스에서 끝나는 것을 특징으로 하는 이방도전 물품.
- 제 13항 내지 제 23항 중 어느 항에 있어서, 제 2의 기판상의 상응하는 연결위치 패턴과 면대면으로 정렬될 때 제 1의 기판상의 예정된 연결위치 패턴과 전기적 연결을 형성하기위하여, 이방도전 물품은 시이트 재료가 상응하는 연결위치 쌍과 접촉하고 있는 각 통로의 각 단부에 있는 도전재료를 갖는 기판 사이에 배열될 때 대향하는 연결을 형성하기 위해 상기 연결위치 패턴에 상응하는 도전통로 패턴을 갖는 것을 특징으로 하는 이방 도전 물품.
- 제 13항 내지 제 23항 중 어느 항에 있어서, 이방 도전 물품의 적어도 일부는 시이트표면의 평방 밀리미터당 적어도 25개의 도전통로를 갖는 것을 특징으로 하는 이방 도전 물품.
- 제 13항 내지 제 25항 중 어느 항에 있어서, 직접회로 반도체 장치상의 연결위치에 열압축 본딩되는 도전통로들중 적어도 일부의 열압축 본딩 가능한 단부를 갖는 것을 특징으로 하는 이방 도전 물품.
- 제 26항에 있어서, 마이크로일렉트릭 상호연결회로에 땜납본딩되는 도전통로중 적어도 일부의 땜납 본딩 가능한 단부를 갖는 것을 특징으로하는 이방 도전 물품.
- 제 13항 또는 제 25항 중 어느항에 있어서, 마이크로일렉트로닉 상호 연결회로에 열압축 본딩되는 도전통로들중 적어도 일부의 열압축 본딩 가능한 단부를 갖는 것을 특징으로하는 이방 도전 물품.
- 제 28에 있어서, 집적회로 반도체 장치상의 연결위치에 땜납본딩되는 도전통로들중 적어도 일부의 땜납 본딩 가능한 단부를 갖는 것을 특징으로하는 이방 도전 물품.
- 시이트 재료의 대립된 주표면 구역간의 구멍 내에 밀착 고정 되고 전기적으로 분리된 도전통로를 제공하는 도전재료와 절연재료로 구성되고, 상기 통로의 한 단부에 있는 도전통로의 최소본딩온도 보다 낮은 온도에서 본딩될 수 있는 것을 특징으로하는 이방(바람직하게 사실상은 단축)도전 물품.
- 제 19항에 있어서, 본딩 가능한 재료는 상기통로의 한단부에 있는 제 1의 땜납과 상기통로의 다른 단부에 있는 제 2의 땜납으로 구성되는 것을 특징으로하는 이방 도전 물품.
- 제 13항 내지 제 31항에 따른 이방 도전 물품은, (a) 상기통로의 한단부에 있는 도체에 열압축 본딩되고, 그리고 상기통로의 다른 단부에 있는 도체에 땜납본딩되고, 또는 (b) 제 1의 최소 본딩온도를 갖는 땜납에 의해 상기 통로의 한 단부에 있는 도체에 땜납 본딩되고, 그리고 제 1의 최소본딩 온도보다 낮은 제 2의 최소본딩 온도를 갖는 땜납에 의해 제 1의 최소본딩 온도 아래에서 상기통로의 다른 단부에 있는 도체의 땜납 본딩되는 것으로 이루어지는 것을 특징으로 하는 전기적연결을 형성하는 방법.
- 시이트 재료의 주표면들간에 도전통로를 제공하는 도전재료를 개별적으로 포함하는 관통구멍을 갖는 절연시이트 재료로 구성되고, 접촉을 위해 노출되는 도전재료의 표면은 적어도 2마이크로미터 두께의 금으로 구성되는 것을 특징으로 하는 단축도전물품.
- 제 33항에 있어서, 금은 관통구멍에 도금된 다른 금속으로 된 관형성물의 적어도 일부상에 도금되는 것을 특징으로 하는 단축 도전 물품.
- 전기한 어느 항에 기술되어 있는 바와 같은 도전재료를 포함하는 2 이상의 관통 구멍 어레이를 포함하는 절연시이트 재료의 스트립으로 구성되는 물품.
- 제 35항에 있어서, 기계적인 바람직하게 자동적인 공급수단에 의해 프로세싱 장치에 공급하기에 적당한 것을 특징으로 하는 물품.
- 어떤 전기한 항에 있어서, 상기 절연시이트 재료는 ASTM D882에 따라 4일 동안 100℃에서의 물에 침지된 후 그 최초 신장의 적어도 50%, 바람직하게는 적어도 75% 더 바람직하게는 적어도 85%를 유지할 수 있는 포리이미드인 것을 특징으로하는 방법, 어셈블리, 또는 물품.
- 어떤 전기한 항에 있어서, 상기 절연시이트 재료는 4,4'-베페닐 이수물과(4,4'-디아미노비페닐, 또는 4,4'-디아미노비페닐 에테르, 또는 페닐렌디아민, 바람직하게는 P-페닐렌디아밀)의 중합으로부터 유도된 폴리이미드인 것을 특징으로 하는 방법, 어셈블리, 또는 물품.
- 어떤 전기한 항에 있어서, 도전통로의 적어도 일부, 바람직하게는 사실상 전부는 직경이 200마이크로미터보다 크지 않거나, 바람직하게는 100마이크로미터 보다 크지 않을 것을 특징으로 하는 방법, 어셈블리, 또는 물품.
- 어떤 전기한 항에 있어서, 상기 구멍은 레이저 드링링, 바람직하게는 U.V. 레이저 어블레이션에 의해 만들어지는 것을 특징으로 하는 방법, 어셈블리, 또는 물품.
- 어떤 전기한 항에 있어서, 상기 구멍은 구멍축에 대해 10° 이하, 바람직하게는 8° 이하로 테이퍼되어 있는 것을 특징으로 하는 방법, 어셈블리, 또는 물품.
- 제 41항에 있어서, 테이퍼는 6° 이하, 바람직하게는 4° 이하인 것을 특징으로하는 방법, 어셈블리 또는 물품.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8802565 | 1988-02-05 | ||
GB888802565A GB8802565D0 (en) | 1988-02-05 | 1988-02-05 | Uses of uniaxially electrically conductive articles |
GB888819895A GB8819895D0 (en) | 1988-08-22 | 1988-08-22 | Anisotropically electrically conductive article |
GB8819895.7 | 1988-08-22 | ||
GB8823053.7 | 1988-09-30 | ||
GB888823053A GB8823053D0 (en) | 1988-09-30 | 1988-09-30 | Uses of uniaxially electrically conductive articles |
GB888828245A GB8828245D0 (en) | 1988-12-02 | 1988-12-02 | Anisotropically electrically conductive articles |
GB8828245.4 | 1988-12-02 | ||
PCT/GB1989/000111 WO1989007339A1 (en) | 1988-02-05 | 1989-02-03 | Uses of uniaxially electrically conductive articles |
Publications (1)
Publication Number | Publication Date |
---|---|
KR900701042A true KR900701042A (ko) | 1990-08-17 |
Family
ID=27450040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890701828A KR900701042A (ko) | 1988-02-05 | 1989-02-03 | 단축 도전 물품의 이용 |
Country Status (5)
Country | Link |
---|---|
EP (2) | EP0440615A1 (ko) |
JP (1) | JP2758053B2 (ko) |
KR (1) | KR900701042A (ko) |
CA (1) | CA1321659C (ko) |
WO (1) | WO1989007339A1 (ko) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2780375B2 (ja) * | 1989-09-11 | 1998-07-30 | 新日本製鐵株式会社 | Tabテープと半導体チップを接続する方法およびそれに用いるバンプシート |
JP2779853B2 (ja) * | 1989-12-06 | 1998-07-23 | イビデン株式会社 | インナーリードと電子部品との接続中間体の製造方法 |
CA2034702A1 (en) * | 1990-01-23 | 1991-07-24 | Masanori Nishiguchi | Method for packaging semiconductor device |
DE69233684D1 (de) | 1991-02-22 | 2007-04-12 | Canon Kk | Elektrischer Verbindungskörper und Herstellungsverfahren dafür |
DE69229661T2 (de) * | 1991-04-26 | 1999-12-30 | Citizen Watch Co Ltd | Verfahren zur Herstellung einer Anschlusstruktur für eine Halbleiteranordnung |
US5585282A (en) * | 1991-06-04 | 1996-12-17 | Micron Technology, Inc. | Process for forming a raised portion on a projecting contact for electrical testing of a semiconductor |
US5334804A (en) * | 1992-11-17 | 1994-08-02 | Fujitsu Limited | Wire interconnect structures for connecting an integrated circuit to a substrate |
US5474458A (en) * | 1993-07-13 | 1995-12-12 | Fujitsu Limited | Interconnect carriers having high-density vertical connectors and methods for making the same |
US5326428A (en) | 1993-09-03 | 1994-07-05 | Micron Semiconductor, Inc. | Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability |
US5478779A (en) * | 1994-03-07 | 1995-12-26 | Micron Technology, Inc. | Electrically conductive projections and semiconductor processing method of forming same |
US5801915A (en) * | 1994-01-31 | 1998-09-01 | Applied Materials, Inc. | Electrostatic chuck having a unidirectionally conducting coupler layer |
US5665989A (en) * | 1995-01-03 | 1997-09-09 | Lsi Logic | Programmable microsystems in silicon |
DE10343257B4 (de) * | 2003-09-17 | 2009-06-10 | Qimonda Ag | Verfahren zur Herstellung von Zwischenverbindungen bei Chip-Sandwich-Anordnungen |
EP1796443A1 (de) * | 2005-12-09 | 2007-06-13 | Delphi Technologies, Inc. | Kontaktelement und elektrisches Verbindungssystem |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4332341A (en) * | 1979-12-26 | 1982-06-01 | Bell Telephone Laboratories, Incorporated | Fabrication of circuit packages using solid phase solder bonding |
US4667219A (en) * | 1984-04-27 | 1987-05-19 | Trilogy Computer Development Partners, Ltd. | Semiconductor chip interface |
CA1238959A (en) * | 1984-08-09 | 1988-07-05 | Robert R. Rohloff | Area-bonding tape |
EP0183598A3 (en) * | 1984-11-13 | 1987-01-28 | Augat Inc. | A shielded integrated circuit package |
CA1284523C (en) * | 1985-08-05 | 1991-05-28 | Leo G. Svendsen | Uniaxially electrically conductive articles with porous insulating substrate |
US4700473A (en) * | 1986-01-03 | 1987-10-20 | Motorola Inc. | Method of making an ultra high density pad array chip carrier |
AU598253B2 (en) * | 1986-05-07 | 1990-06-21 | Digital Equipment Corporation | System for detachably mounting semi-conductors on conductor substrates |
-
1989
- 1989-02-03 WO PCT/GB1989/000111 patent/WO1989007339A1/en not_active Application Discontinuation
- 1989-02-03 KR KR1019890701828A patent/KR900701042A/ko not_active Application Discontinuation
- 1989-02-03 EP EP89902401A patent/EP0440615A1/en active Pending
- 1989-02-03 JP JP1502204A patent/JP2758053B2/ja not_active Expired - Fee Related
- 1989-02-03 EP EP89301107A patent/EP0329314A1/en not_active Ceased
- 1989-02-06 CA CA000590179A patent/CA1321659C/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH03502511A (ja) | 1991-06-06 |
JP2758053B2 (ja) | 1998-05-25 |
EP0329314A1 (en) | 1989-08-23 |
EP0440615A1 (en) | 1991-08-14 |
WO1989007339A1 (en) | 1989-08-10 |
CA1321659C (en) | 1993-08-24 |
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