KR900012375A - How to form L. D. D region of MOSFET - Google Patents

How to form L. D. D region of MOSFET Download PDF

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Publication number
KR900012375A
KR900012375A KR1019890000061A KR890000061A KR900012375A KR 900012375 A KR900012375 A KR 900012375A KR 1019890000061 A KR1019890000061 A KR 1019890000061A KR 890000061 A KR890000061 A KR 890000061A KR 900012375 A KR900012375 A KR 900012375A
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KR
South Korea
Prior art keywords
polysilicon
region
right sides
lower left
photoresist film
Prior art date
Application number
KR1019890000061A
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Korean (ko)
Inventor
안동준
구영모
유호경
윤종윤
김세정
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정몽헌
현대전자산업 주식회사
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Priority to KR1019890000061A priority Critical patent/KR900012375A/en
Publication of KR900012375A publication Critical patent/KR900012375A/en

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Abstract

내용 없음No content

Description

MOSFET의 L.D.D영역 형성방법How to form L.D.D area of MOSFET

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 1도는 실리콘 기판 상부에 게이트 전극과 감광막을 형성하고 각각 일정부분 제거시킨 상태의 단면도, 제 2도는 감광막 상부에서 이온주입으로 N+ 영역을 형성시킨 상태의 단면도, 제 3도는 감광막을 제거하고 이온주입으로 N-영역을 형성시킨 상태의 단면도.FIG. 1 is a cross-sectional view of a gate electrode and a photoresist film formed on a silicon substrate and partially removed, and FIG. 2 is a cross-sectional view of an N + region formed by ion implantation on a photoresist film. Cross-sectional view of a state in which an N-region is formed.

Claims (1)

실리콘 기판 상부에 게이트 산화막, 게이트 전극용 폴리실리콘 및 감광막을 순차적으로 형성한다음, 감광막의 일정부분을 남기고 제거하여 이루어지는 MOSFET 소자의 소오스 및 드레인 전극을 제조하는 방법에 있어서, 감광막 하부의 게이트 전극용 폴리실리콘을 등방성 식각방법으로 식각하고 불순물 (N+또는 P)을 이온주입으로 게이트 전극용 폴리실리콘 좌우면 하단에서 일정간격을 이격시켜 N영역을 형성하고, 상기감광막을 제거하고 불순물(N- 또는 P-)을 이온주입으로 게이트 전극용 폴리실리콘 좌우면 하단에 N-영역을 형성하는 것을 특징으로 하는 MOSFET의 L.D.D영역 형성방법.A method of manufacturing a source and drain electrode of a MOSFET device formed by sequentially forming a gate oxide film, a polysilicon for a gate electrode, and a photoresist film on a silicon substrate, and then leaving a portion of the photoresist film. Polysilicon is etched by isotropic etching and impurities (N + or P ) By ion implantation, spaced a certain distance from the lower left and right sides of the polysilicon for the gate electrode N Forming a region, and removing the photosensitive film and implanting impurities (N- or P-) into ions to form N-regions on the lower left and right sides of the polysilicon for gate electrodes. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890000061A 1989-01-06 1989-01-06 How to form L. D. D region of MOSFET KR900012375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890000061A KR900012375A (en) 1989-01-06 1989-01-06 How to form L. D. D region of MOSFET

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890000061A KR900012375A (en) 1989-01-06 1989-01-06 How to form L. D. D region of MOSFET

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KR900012375A true KR900012375A (en) 1990-08-04

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KR1019890000061A KR900012375A (en) 1989-01-06 1989-01-06 How to form L. D. D region of MOSFET

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