KR900011534A - 다이어몬드류 박막의 제조방법 및 그 제조장치 - Google Patents
다이어몬드류 박막의 제조방법 및 그 제조장치Info
- Publication number
- KR900011534A KR900011534A KR1019900000370A KR900000370A KR900011534A KR 900011534 A KR900011534 A KR 900011534A KR 1019900000370 A KR1019900000370 A KR 1019900000370A KR 900000370 A KR900000370 A KR 900000370A KR 900011534 A KR900011534 A KR 900011534A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- thin film
- diamond thin
- same
- manufacturing same
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1-6292 | 1989-01-13 | ||
JP1006292A JPH02188494A (ja) | 1989-01-13 | 1989-01-13 | ダイヤモンド類薄膜の製造方法および製造装置 |
JP1006293A JPH02188495A (ja) | 1989-01-13 | 1989-01-13 | ダイヤモンド類薄膜の製造方法 |
JP1-6293 | 1989-01-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900011534A true KR900011534A (ko) | 1990-08-01 |
KR940003099B1 KR940003099B1 (ko) | 1994-04-13 |
Family
ID=26340390
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900000370A KR940003099B1 (ko) | 1989-01-13 | 1990-01-13 | 다이어몬드류 박막의 제조방법 및 그 제조장치 |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0378230A1 (ko) |
KR (1) | KR940003099B1 (ko) |
CA (1) | CA2007780A1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5022801A (en) * | 1990-07-18 | 1991-06-11 | The General Electric Company | CVD diamond coated twist drills |
US5096736A (en) * | 1990-08-07 | 1992-03-17 | General Electric Company | Cvd diamond for coating twist drills |
BR9500865A (pt) * | 1995-02-21 | 1997-04-29 | Inst Nacional De Pesquisas Esp | Brocas para uso odontológico ou uso correlato de desgaste ou perfuração revestidas com diamante obtido com as técnicas químicas de crescimento a partir da fase vapor -CVD(chemical vapor deposition) |
US5679159A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Spinning substrate holder for cutting tool inserts for improved arc-jet diamond deposition |
JP3719468B2 (ja) * | 1996-09-02 | 2005-11-24 | 株式会社デンソー | 蓄圧式燃料噴射装置 |
EP3285263B1 (en) * | 2015-04-15 | 2023-05-10 | Kaneka Corporation | Use of a carbon film as a charge stripping film configured to be part of an ion beam charge stripping device |
CN112996209B (zh) * | 2021-05-07 | 2021-08-10 | 四川大学 | 一种微波激发常压等离子体射流的结构和阵列结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58182819A (ja) * | 1982-04-20 | 1983-10-25 | Toshiba Corp | 加熱基台 |
-
1990
- 1990-01-12 EP EP90100625A patent/EP0378230A1/en not_active Withdrawn
- 1990-01-13 KR KR1019900000370A patent/KR940003099B1/ko not_active IP Right Cessation
- 1990-01-15 CA CA002007780A patent/CA2007780A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR940003099B1 (ko) | 1994-04-13 |
EP0378230A1 (en) | 1990-07-18 |
CA2007780A1 (en) | 1990-07-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
PT88418A (pt) | Method and apparatus for preparing textured apertured film | |
KR900005641A (ko) | 박막 형성장치 및 방법 | |
FI100409B (fi) | Menetelmä ja laitteisto ohutkalvojen valmistamiseksi | |
FI945612A (fi) | Menetelmä ja laite ohutkalvojen valmistamiseksi | |
KR950702144A (ko) | 웨이퍼 연마 방법 및 장치(Wafer polishing method and apparatus) | |
KR890700465A (ko) | 공동의 광 전도체와 그 제조 방법 및 장치 | |
KR900007586A (ko) | 타이어 성형 방법 및 그 장치 | |
DE69034121D1 (de) | Aufzeichnungsvorrichtung und -verfahren | |
KR900700401A (ko) | 유리 시이트를 탬퍼링하기 위한 장치 및 방법 | |
FI103737B1 (fi) | Menetelmä ja laite tekosaaren konstruktoimiseksi ja siten saatu rakenne | |
KR960010909A (ko) | 박막형성장치 및 박막형성방법 | |
KR890700405A (ko) | 피복장치와 방법 | |
NO892903L (no) | Fremgangsmaate og innretning for fremstilling av glidelaaser | |
EP0426931A3 (en) | Film bonding method and apparatus for performing same | |
KR960009003A (ko) | 박막형성방법 및 장치 | |
ITMI912085A1 (it) | Apparecchiatura e metodo per la misura di angoli | |
EP0438671A3 (en) | Abrasive film and method for production thereof | |
KR960701745A (ko) | 박막형성장치 및 박막형성방법(thin film forming apparatus and thin film forming method) | |
SG43247A1 (en) | Thin film bonding method and apparatus having structure for removing wetting agents | |
BR9001005A (pt) | Metodo e aparelho para fabricacao de fitas longitudinais de ziper | |
FI91048B (fi) | Menetelmä ja laite kuitulevyjen valmistamiseksi | |
EP0483880A3 (en) | Method for forming thin film and apparatus therefor | |
KR900011534A (ko) | 다이어몬드류 박막의 제조방법 및 그 제조장치 | |
IT8448946A0 (it) | Metodo e dispositivo per la fabbricazione di rulli | |
KR880701788A (ko) | 콘덴서용 금속화 필름과 그것을 제조하는 방법 및 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20020403 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |