KR900010981A - 질화 알루미늄 및 질화 알루미늄-붕규산 유리 복합 재료를 포함하는 전자 패키지(electronic package) - Google Patents

질화 알루미늄 및 질화 알루미늄-붕규산 유리 복합 재료를 포함하는 전자 패키지(electronic package) Download PDF

Info

Publication number
KR900010981A
KR900010981A KR1019890018881A KR890018881A KR900010981A KR 900010981 A KR900010981 A KR 900010981A KR 1019890018881 A KR1019890018881 A KR 1019890018881A KR 890018881 A KR890018881 A KR 890018881A KR 900010981 A KR900010981 A KR 900010981A
Authority
KR
South Korea
Prior art keywords
layer
borosilicate glass
sheet
sinterable
raw
Prior art date
Application number
KR1019890018881A
Other languages
English (en)
Other versions
KR0148115B1 (ko
Inventor
해리슨 앤로 잭
윙-경 라우 존
와렌 라이스 로이
Original Assignee
윌리암 더블유, 맥도웰 쥬니어
더블유. 알 그레이스 앤드 컴패니-콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리암 더블유, 맥도웰 쥬니어, 더블유. 알 그레이스 앤드 컴패니-콘 filed Critical 윌리암 더블유, 맥도웰 쥬니어
Publication of KR900010981A publication Critical patent/KR900010981A/ko
Application granted granted Critical
Publication of KR0148115B1 publication Critical patent/KR0148115B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C03C3/091—Glass compositions containing silica with 40% to 90% silica, by weight containing boron containing aluminium
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/632—Organic additives
    • C04B35/634—Polymers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
    • H01B3/087—Chemical composition of glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/486—Via connections through the substrate with or without pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/24983—Hardness

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Ceramic Products (AREA)
  • Laminated Bodies (AREA)

Abstract

내용 없음

Description

질화 알루미늄 및 질화 알루미늄-붕규산 유리 복합 재료를 포함하는 전자 패키지(electronic package)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예 1에서 제조된 전자 패키지의 평면도, 제2도는 2-2'선을 따라 절취한 제 1도 패키지 모퉁이의 확대 사시도, 제3도는 바이아(via)와 금속 피복막을 보여주기 위하여 3-3'선을 따라 절취한 제 2도의 개략적인 확대 단면도, 제4도는 미가공 리드 프레임(greenware lead frame)의 평면도, 제 5도는 5-5'선을 따라 절취한 리드 프레임의 단면도.

Claims (26)

  1. 고밀도화 AIN 베이스층 및 거기에 결합된 1이상이 고밀도와 AIN-붕규산 유리 복합 재료층을 포함하는, 전자 패키지에 사용되기 적합한 세라믹 지지 구조물.
  2. 제1항에 있어서, 한개 이상의 층이 금속으로 피복된 패키지.
  3. 제2항에 있어서, AIN 베이스가 금속으로 피복된 패키지.
  4. 제 1항에 있어서, 층들을 통해 전도성 바이아가 포함되어 있는 패키지.
  5. 제 2항에 있어서, 층들을 통해 전도성 바이아가 포함되어 있는 패키지.
  6. 제 1항에 있어서, AIN 베이스에 결합된 AIN-붕규산 유리층이 공극을 갖고 있는 패키지.
  7. (a)(1) 고밀도화 베이스, (2) 필수적으로 미분 소결성 입자와 결합제의 균질 혼합물로 구성된 1이상의 소결성 미가공 쉬이트 및 (3) 필수적으로 미분 비(非)소결성 입자와 결합제의 균질 혼합물로 구성된 비소결성 재료의 미가공 쉬이트를 포함하는 미가공 적층품을 고온 압축시키고, (b) 미소결성 재료를 제거하는 단계를 포함하는 전자 패키지의 제조방법.
  8. 제 7항에 있어서, 결합제가 산소 부재하의 열분해시 바람직하지 못한 잔류물을 남기지 않는 유기 결합제인 제조방법.
  9. 제 8항에 있어서, 결합제가 폴리에틸렌인 제조방법.
  10. 제 7항에 있어서, 고온 압축시키기 이전에 적층들중 1이상의 층을 금속으로 피복시키는 제조방법.
  11. 제 7항에 있어서, 고밀도화 베이스가 A1N이고; 소결성 미가공 쉬이트내의 입자들이 A1N 및 붕규산 유리의 혼합물이며; 비-소결성 미가공 쉬이트내의 비소결성 입자들이 BN인 제조방법.
  12. 제 7항에 있어서, 적층들이 금속 미립자와 결합제를 함유하는 바이아를 포함하는 제조방법.
  13. 제 11항에 있어서, 고온 압축을 약 600 내지 1400℃의 온도 및 약 500 내지 100 psi의 압력하에 약 1 내지 2시간동안 실시하는 제조방법.
  14. 제 11항에 있어서, 미가공 적층품이, (1)고밀도화 A1N 베이스;(2) 노출된 표면 공극의 윤곽을 형성하는 A1N-붕규산 유리의 미가공 쉬이트 1이상;(3) BN의 미가공 쉬이트 플러그를 둘러싸는 상기 공극 및 (4) BN의 미가공 쉬이트를 포함하는 제조방법.
  15. 제 14항에 있어서, 고온 압축시키기 이전에 적층들중 1 이상의 층을 금속으로 피복시키는 제조방법.
  16. 제 7항의 방법에 의하여 제조된 제품.
  17. 제 11항의 방법에 의하여 제조된 제품.
  18. 하기층들, 즉 (1) 고밀도 A1N 베이스를 포함하는 제 1층, (2) 원하는 모양의 소결성 및 비-소결성 미가공 쉬이트의 별개의 구역을 갖고 있는 미가공 세라믹 쉬이트를 포함하는 제 2층, 및 (3) 소결성 및 비-소결성 쉬이트 재료들이 상호 교환되도록 제 2층을 보충해주는 미가공 세라믹 복제물을 포한하는 제 3층으로 된 미가공 적층품을 고온 압축시키고, 상기 제 3층 및 비-소결성 재료를 제 2층으로부터 제거하여 고밀도 제품을 제조하는 방법.
  19. 제 18항에 있어서, 제 2층이 1이상의 미가공 쉬이트를 포함하고, 그에따라 제 3층이 비숫한 수의 보층 쉬이트를 포함하는 방법.
  20. 열전도율이 0.07W/cm2K이상인 고밀도 AIN-붕규산 유리 조성물.
  21. 제 20항에 있어서, 약 10 내지 28 중량%의 B2O3; 약 60 내지 81중량%의 SiO2; 약 1 내지 4중량%의 Al2O3; 약 60 내지 81중량%의 SiO2; 약 1 내지 4중량%의 Al2O3; 및 Li2O, Na2O, K2O 또는 Ca0로 이루어진 군에서 선택된 1이상의 구성원 2내지 10중량%를 필수 성분으로 갖는 붕규산 유리속에 A1N입자들이 거의 균일하게 분산되어 있는 분산액을 포함하는 조성물.
  22. 제 21항에 있어서, 조성물이 평균 약 0.1 내지 20 미크론의 입자 형태인 조성물.
  23. 제 21항에 있어서, A1N:붕규산 유리의 중량비가 약 1:0.45 내지 0.70인 조성물.
  24. (I)미분 A1N-붕규산 유리, 산소 부재하의 열분해시 바람직하지 못한 잔류물을 남기지 않는 유기 결합제 및 광물성 오일로 된 균질혼합물을 혼합하고, 이 혼합물을 고온하에 배합하여 유기 결합제의 용해를 수월하게 만들고, (II) 단계(I)의 배합된 혼합물을 다이를 통한 압출에 의해 성형하여 쉬이트를 형성시키고, (III) 유기 용매로 추출함으로써 광물성 오일을 제거하는 단계들을 포함하는, 세라믹 미가공 쉬이트 형성 방법.
  25. 제 24항에 있어서, 단계(II)에서 단계(I)의 배합된 혼합물을 편평한 쉬이트로 압축시킴으로써 세라믹 미가공 쉬이트를 형성시키는 방법.
  26. (a) A1N분말, 붕규산 유리 분말 및 산소 부재하의 열분해시 바람직하지 못한 잔류물을 남기지 않는 유기 결합제를 포함하는 1이상의 세라믹 미가공 쉬이트를 제조하고, (b) 질화붕소(BN) 분말 및 산소 부재하의 열분해시 바람직하지 못한 탄소성 잔류물을 남지지 않는 유기 결합제를 포함한 질화붕소 쉬이트를 단계(a)에서 제조된 세라믹 미가공 쉬이트의 각 면위에 올려놓아 복합체를 형성시키고, (c) 단계(b)에서 제조된 복합체를, 세라믹을 고밀도화하기에 충분한 온도 및 압력하에 고온압축시키고, (d) 고밀도 세라믹 쉬이트의 각 면위에서 BN층을 제거하는 단계들을 포함하는 고밀도 A1N-붕규산 유리 제품의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890018881A 1988-12-19 1989-12-19 질화 알루미늄 및 질화 알루미늄-붕규산 유리 복합 재료를 포함하는 전자 패키지 KR0148115B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US286,557 1988-12-19
US07/286,557 US5017434A (en) 1988-01-27 1988-12-19 Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite

Publications (2)

Publication Number Publication Date
KR900010981A true KR900010981A (ko) 1990-07-11
KR0148115B1 KR0148115B1 (ko) 1998-08-01

Family

ID=23099139

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018881A KR0148115B1 (ko) 1988-12-19 1989-12-19 질화 알루미늄 및 질화 알루미늄-붕규산 유리 복합 재료를 포함하는 전자 패키지

Country Status (6)

Country Link
US (1) US5017434A (ko)
EP (1) EP0374825A1 (ko)
JP (1) JPH02196073A (ko)
KR (1) KR0148115B1 (ko)
CA (1) CA1332176C (ko)
NO (1) NO895094L (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5346751A (en) * 1988-12-19 1994-09-13 W. R. Grace & Co.-Conn. Electronic package using closed pore composites
US5338975A (en) * 1990-07-02 1994-08-16 General Electric Company High density interconnect structure including a spacer structure and a gap
JPH04254477A (ja) * 1991-02-04 1992-09-09 Sumitomo Electric Ind Ltd ガラス−窒化アルミニウム複合材料
EP0535711A3 (en) * 1991-10-04 1993-12-01 Matsushita Electric Ind Co Ltd Method for producing multilayered ceramic substrate
JPH05206341A (ja) * 1991-10-11 1993-08-13 W R Grace & Co 開口流路のあるセラミツク基質
JP3003413B2 (ja) * 1992-09-21 2000-01-31 松下電器産業株式会社 多層セラミック基板の製造方法
JP3593707B2 (ja) * 1993-03-19 2004-11-24 住友電気工業株式会社 窒化アルミニウムセラミックスとその製造方法
US6696103B1 (en) 1993-03-19 2004-02-24 Sumitomo Electric Industries, Ltd. Aluminium nitride ceramics and method for preparing the same
AU8126894A (en) * 1993-10-29 1995-05-22 Advanced Refractory Technologies, Inc. Thermally-conductive di-electric composite materials, and methods of forming same
US5482903A (en) * 1993-12-22 1996-01-09 International Business Machines Corporation Aluminum nitride body utilizing a vitreous sintering additive
DE4441487C1 (de) * 1994-11-22 1996-05-23 Bosch Gmbh Robert Verfahren zum Herstellen einer Schichtstruktur auf einem wenigstens einlagigen Substrat
US5635008A (en) * 1995-08-07 1997-06-03 Trw Inc. High precision replication system
WO1999064195A2 (en) * 1998-06-05 1999-12-16 Dsm N.V. Curved ceramic moulded part
EP0970932A1 (en) * 1998-07-10 2000-01-12 Sumitomo Electric Industries, Ltd. Ceramic base material
CN111116234B (zh) * 2019-12-31 2021-10-26 中电国基南方集团有限公司 一种高温共烧陶瓷生瓷框的侧面印刷方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904551A (en) * 1973-12-19 1975-09-09 Grace W R & Co Process for preparing an auto exhaust catalytic converter
JPS5563900A (en) * 1978-11-08 1980-05-14 Fujitsu Ltd Multilyaer ceramic circuit board
USRE32111E (en) * 1980-11-06 1986-04-15 Fansteel Inc. Coated cemented carbide bodies
DE3247985C2 (de) * 1982-12-24 1992-04-16 W.C. Heraeus Gmbh, 6450 Hanau Keramischer Träger
JPS6073843A (ja) * 1983-09-30 1985-04-26 株式会社東芝 機能性セラミツクス
EP0153737B1 (en) * 1984-02-27 1993-07-28 Kabushiki Kaisha Toshiba Circuit substrate having high thermal conductivity
US4770953A (en) * 1986-02-20 1988-09-13 Kabushiki Kaisha Toshiba Aluminum nitride sintered body having conductive metallized layer
EP0396155B1 (en) * 1986-07-15 1993-12-08 E.I. Du Pont De Nemours And Company Glass ceramic dielectric compositions
US4775596A (en) * 1987-02-18 1988-10-04 Corning Glass Works Composite substrate for integrated circuits
US4920640A (en) * 1988-01-27 1990-05-01 W. R. Grace & Co.-Conn. Hot pressing dense ceramic sheets for electronic substrates and for multilayer electronic substrates

Also Published As

Publication number Publication date
NO895094D0 (no) 1989-12-18
NO895094L (no) 1990-06-20
EP0374825A1 (en) 1990-06-27
JPH02196073A (ja) 1990-08-02
US5017434A (en) 1991-05-21
KR0148115B1 (ko) 1998-08-01
CA1332176C (en) 1994-09-27

Similar Documents

Publication Publication Date Title
KR900010981A (ko) 질화 알루미늄 및 질화 알루미늄-붕규산 유리 복합 재료를 포함하는 전자 패키지(electronic package)
US4920640A (en) Hot pressing dense ceramic sheets for electronic substrates and for multilayer electronic substrates
US4867935A (en) Method for preparing ceramic tape compositions
JP2906282B2 (ja) ガラスセラミック・グリーンシートと多層基板、及び、その製造方法
EP0132740B1 (en) Method of forming a dielectric substrate
JPH11502806A (ja) 収縮整合セラミック複合材の製造方法
KR960010573A (ko) 위스커 보강된 알루미나 복합체의 무압 소결 방법
US4817276A (en) Process for producing ceramic substrates for microelectronic circuits
US5102749A (en) Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite
US5073526A (en) Electronic package comprising aluminum nitride and aluminum nitride-borosilicate glass composite
US5800761A (en) Method of making an interface layer for stacked lamination sizing and sintering
US7879169B2 (en) Method for producing ceramic compact
US6319343B1 (en) Green sheets of controlled microporosity and method of producing same
US5028650A (en) Boron nitride sheets
EP0386788A1 (en) Boron nitride sheets
CN1055350A (zh) 生坯陶瓷体烧成期间降低收缩的方法
US5346751A (en) Electronic package using closed pore composites
CN111470866A (zh) 金刚石-碳化硅复合材料及其制备方法、电子设备
US5866470A (en) Method of using an interface layer for stacked lamination sizing and sintering
CN1130608A (zh) 复合陶瓷生坯带及制造该生坯带的方法
KR0173233B1 (ko) 저유전율 다층 세라믹 회로기판의 제조방법
JP2611290B2 (ja) 高熱伝導性セラミック基板の製造方法
JP2986452B2 (ja) Ｍｌｃ工程に用いる薄膜のグリーンシート
JPS5978979A (ja) 有機結合材を含む焼結粉末成形体の脱脂方法
KR100843449B1 (ko) 세라믹 시트 제품 및 그 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120507

Year of fee payment: 15

EXPY Expiration of term