KR900005151B1 - 집적회로에 있어서의 보호장치 - Google Patents
집적회로에 있어서의 보호장치 Download PDFInfo
- Publication number
- KR900005151B1 KR900005151B1 KR1019850005503A KR850005503A KR900005151B1 KR 900005151 B1 KR900005151 B1 KR 900005151B1 KR 1019850005503 A KR1019850005503 A KR 1019850005503A KR 850005503 A KR850005503 A KR 850005503A KR 900005151 B1 KR900005151 B1 KR 900005151B1
- Authority
- KR
- South Korea
- Prior art keywords
- resistor
- diffusion region
- protective device
- circuit
- substrate
- Prior art date
Links
- 238000009792 diffusion process Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000005360 phosphosilicate glass Substances 0.000 claims abstract 2
- 230000001681 protective effect Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- OYLRFHLPEAGKJU-UHFFFAOYSA-N phosphane silicic acid Chemical compound P.[Si](O)(O)(O)O OYLRFHLPEAGKJU-UHFFFAOYSA-N 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010280 constant potential charging Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005339 levitation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16F—SPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
- F16F3/00—Spring units consisting of several springs, e.g. for obtaining a desired spring characteristic
- F16F3/08—Spring units consisting of several springs, e.g. for obtaining a desired spring characteristic with springs made of a material having high internal friction, e.g. rubber
- F16F3/087—Units comprising several springs made of plastics or the like material
- F16F3/0873—Units comprising several springs made of plastics or the like material of the same material or the material not being specified
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Vibration Prevention Devices (AREA)
- Springs (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59166923A JPS6145124A (ja) | 1984-08-09 | 1984-08-09 | 防振装置 |
| JP59-166823 | 1984-08-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR860002144A KR860002144A (ko) | 1986-03-26 |
| KR900005151B1 true KR900005151B1 (ko) | 1990-07-20 |
Family
ID=15840159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019850005503A KR900005151B1 (ko) | 1984-08-09 | 1985-07-30 | 집적회로에 있어서의 보호장치 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS6145124A (no) |
| KR (1) | KR900005151B1 (no) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5096153A (en) * | 1990-10-19 | 1992-03-17 | Onan Corporation | Shock and vibration mount |
| DE4119605C1 (no) * | 1991-06-14 | 1992-11-26 | Stop-Choc Schwingungstechnik Gmbh & Co Kg, 7253 Renningen, De | |
| DE29710578U1 (de) * | 1997-06-17 | 1997-08-28 | Woco Franz-Josef Wolf & Co, 63628 Bad Soden-Salmünster | Einknüpflager |
| KR20020078836A (ko) * | 2001-04-10 | 2002-10-19 | 현대자동차주식회사 | 새시 프레임 차량의 개선된 차체 고정장치 |
| US7048265B2 (en) * | 2003-07-21 | 2006-05-23 | Basf Corporation | Two stage isolation mount assembly |
| JP4256278B2 (ja) * | 2004-02-17 | 2009-04-22 | カヤバ工業株式会社 | ラバーブッシュ |
| US7261365B2 (en) | 2005-03-09 | 2007-08-28 | Basf Corporation | Vehicle body mount assembly |
| JP4562659B2 (ja) * | 2006-01-17 | 2010-10-13 | 日東工業株式会社 | 電気電子機器収納用キャビネット |
| JP5528979B2 (ja) * | 2010-10-05 | 2014-06-25 | 日信工業株式会社 | 車両用ブレーキ装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5425221Y2 (no) * | 1976-08-04 | 1979-08-23 |
-
1984
- 1984-08-09 JP JP59166923A patent/JPS6145124A/ja active Granted
-
1985
- 1985-07-30 KR KR1019850005503A patent/KR900005151B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0556413B2 (no) | 1993-08-19 |
| JPS6145124A (ja) | 1986-03-05 |
| KR860002144A (ko) | 1986-03-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 19940713 Year of fee payment: 5 |
|
| LAPS | Lapse due to unpaid annual fee |