KR900003874B1 - Lead-frame - Google Patents

Lead-frame

Info

Publication number
KR900003874B1
KR900003874B1 KR1019870000194A KR870000194A KR900003874B1 KR 900003874 B1 KR900003874 B1 KR 900003874B1 KR 1019870000194 A KR1019870000194 A KR 1019870000194A KR 870000194 A KR870000194 A KR 870000194A KR 900003874 B1 KR900003874 B1 KR 900003874B1
Authority
KR
South Korea
Prior art keywords
aluminum
boundary edge
inner lead
cladding layer
clad layer
Prior art date
Application number
KR1019870000194A
Other languages
Korean (ko)
Other versions
KR870009465A (en
Inventor
야스하루 나까무라
Original Assignee
신고오덴기고오교오 가부시끼가이샤
미쓰노브 다개기오
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 신고오덴기고오교오 가부시끼가이샤, 미쓰노브 다개기오 filed Critical 신고오덴기고오교오 가부시끼가이샤
Publication of KR870009465A publication Critical patent/KR870009465A/en
Application granted granted Critical
Publication of KR900003874B1 publication Critical patent/KR900003874B1/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/49Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

The coining line (3) of an aluminium clad layer (2) is cut off with certain angle (Q) against the boundary layer (2a) of an inner lead not to wear off during the coinning. The angle is pref. greater than 10 degrees.

Description

리드프레임Leadframe

제 1(a), (b) 도는 각각 본 발명의 리드프레임의 일실시예를 나타낸 부분사시도.Figure 1 (a), (b) is a partial perspective view showing an embodiment of the lead frame of the present invention, respectively.

제 2(a), (b) 도는 각각 종래예를 나타낸 부분사시도.2 (a) and 2 (b) are partial perspective views each showing a conventional example.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 내측리드 2 : 알미늄크래드층1: inner lead 2: aluminum clad layer

2a : 경계단연 3 : 주조라인2a: boundary edge 3: casting line

본 발명은 반도체칩과 외부단자등을 전기적으로 접속하는 리드프레임에 관한 것이다.The present invention relates to a lead frame for electrically connecting a semiconductor chip and an external terminal.

일반적으로 리드프레임은 반도체칩과 와이어 접속에 의하여 전기적으로 접속하기 위하여 그 내측리드(inner lead)의 선단부에 알미늄크래드층(Aluminum-clad layer)을 형성하고 있다.In general, an aluminum clad layer is formed at a leading end of an inner lead to electrically connect the lead frame by a semiconductor chip and a wire connection.

제 2 도(a)는 종래의 내측리드 1을 나타내는 것으로 그 선단부에 알미늄크래드층 2가 압착등에 의해서 접합되어 있다. 이 내측리드 1은 알미늄크래드층 2를 형성하는 판조체(板條體)가 플래스로 뚫려 성형되면 그 어깨부분에 늘어뜨려짐이 생겨버려 알미늄크래드층 2의 표면이 평탄도를 상실하므로 반도체칩과 와이어 접속할 때에 접속불량을 일으킬 우려가 있다.FIG. 2 (a) shows a conventional inner lead 1, and an aluminum clad layer 2 is joined to the tip portion thereof by crimping or the like. The inner lid 1 is formed by laminating the plate-like body forming the aluminum cladding layer 2 with a flash, which is liable to fall on the shoulder portion, and the surface of the aluminum cladding layer 2 loses its flatness. There is a risk of connection failure when connecting the chip and wire.

그런데 종래에는 제 2 도(b)에 나타냄과 같이 내측리드 1의 선단부의 알미늄크래드층 2에 주조를 하여 평탄면을 향성하고 있었다.By the way, as shown in FIG. 2 (b), casting was carried out to the aluminum clad layer 2 of the front end part of the inner lid 1, and the flat surface was oriented.

그런데 종래에는 알미늄크래드층 2의 경계단연 2a를 주조라인 3과 평행으로 설비하고 있었으므로 내측리드 1이 뚫리는 판조체에 형성된 알미늄크래드층 2의 위치엊갈림등에 기인되어 경계단연 2a와 주조라인 3이 접근하든지 겹쳐지든지 하면 주조시에 작용하는 응력이 두 부재의 접합부인 알미늄크래드층 2의 경계단연 2a의 전장에 결쳐서 집중하게 되어 알미늄크래드층 2가 경계단연 2a부분에서 벗겨지는 바람직하지 않는 일이 있었다.However, in the past, the boundary edge 2a of the aluminum cladding layer 2 was installed in parallel with the casting line 3, and thus the boundary edge 2a and the casting line were caused due to the dislocation of the aluminum cladding layer 2 formed in the plate body through which the inner lead 1 was drilled. When 3 approaches or overlaps, the stress applied during casting concentrates on the entire length of the boundary edge 2a of the aluminum cladding layer 2, which is the joint of the two members, and the aluminum cladding layer 2 peels off at the boundary edge 2a. There was something undesirable.

이와같이 알미늄크래드층 2가 경계단연 2a부분에서 벗겨지면 알미늄크래드층 2자신이 내측리드 1의 기재부(基材部)로부터 벗겨짐이 유발되고, 나아가서는 접촉불량을 생기게 하는 우려가 있었다.When the aluminum clad layer 2 is peeled off at the boundary edge 2a in this manner, the aluminum clad layer 2 itself may be peeled off from the base portion of the inner lid 1, and there is a fear of causing contact failure.

본 발명은 이들 문제점에 비추어서 행해진 것으로 내측리드상에 형성된 크래드층의 경계단연이 주조를 해도 벗겨짐이 없고 내측리드와 반도체칩과의 와이어 접속상태를 항상 양호하게 유지할 수 있어 신뢰성이 높은 리드프레임을 제공하는 것을 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made in view of these problems, and the lead edge of the cladding layer formed on the inner lead is not peeled off even when casting, and the wire connection state between the inner lead and the semiconductor chip can be always maintained satisfactorily. It aims to provide.

본 발명의 리드프레임은 내측리드의 선단부의 표면에 알미늄, 동, 동합금등의 크래드층을 갖고, 그 선단부에 주조를 행하여 이루어지는 리드프레임에 있어서 상기 크래드층의 경계단연과 그 내측리드 선단부의 주조라인을 비스듬하게 설비한 것을 특징으로 하고 있다.The lead frame of the present invention has a clad layer made of aluminum, copper, copper alloy, etc. on the surface of the leading end of the inner lead, and is cast on the leading end of the lead frame to the boundary edge of the clad layer and the inner lead end of the lead frame. The casting line is installed at an angle.

이하 본 발명의 실시예를 제 1 도에 의해서 설명하겠다.An embodiment of the present invention will now be described with reference to FIG.

제 1 도(a)에 나타냄과 같이 본 실시예에 있어서는 내측리드 1의 선단부에 압착시킨 알미늄크래드층 2의 경계단연 2a에 대하여 주조라인 3이 경사지게 설비되어 있다. 그 경사각 θ는 주조깊이 및 크래드층 2의 두께등과 관련시켜 알미늄크래드층 2의 경계단연 2a가 벗겨지지 않는 크기로 결정한다. 실험에 의하면 경사각 θ는 10°이상으로 하면 좋다.As shown in FIG. 1 (a), in the present embodiment, the casting line 3 is inclined with respect to the boundary edge 2a of the aluminum clad layer 2 pressed against the tip end portion of the inner lead 1. As shown in FIG. The inclination angle θ is determined to be such that the boundary edge 2a of the aluminum cladding layer 2 does not peel off in relation to the casting depth, the thickness of the cladding layer 2, and the like. According to the experiment, the inclination angle θ may be 10 ° or more.

다음에 본 실험예의 작용을 설명하겠다.Next, the operation of the present experimental example will be described.

제 1 도(a)와 같이 알미늄크래드층 2의 경계단연 2a와 주조라인 3이 충분히 떨어져 있는 경우에는 알미늄크래드층 2부분에 주조를 하여도 경계단연 2a가 벗겨지는 일은 없다.As shown in Fig. 1 (a), when the boundary edge 2a of the aluminum cladding layer 2 and the casting line 3 are sufficiently separated, the boundary edge 2a does not peel off even when the aluminum cladding layer 2 is cast.

알미늄크래드층 2의 경계단연 2a와 주조라인 3이 근접하던가 겹쳐지는 경우에는 제 1 도(b)와 같이 구주조된다. 이 도면은 벗겨질 가능성이 가장 높은 경계단연 2a와 주조라인 3이 교차되고 있는 상태를 나타내고 있다.When the boundary edge 2a of the aluminum clad layer 2 and the casting line 3 are close to each other or overlap with each other, they are cast as shown in FIG. 1 (b). This figure shows the state where the boundary edge 2a and the casting line 3 intersect most likely to be peeled off.

그러나 본 실시예에 있어서는 알미늄크래드층 2의 주조는 주조라인 3이 경계단연 2a와 경사각 θ를 갖고 교차되게 행하여지므로 알미늄크래드층 2의 경계단연 2a부는 벗겨지지 않는다However, in this embodiment, the casting of the aluminum cladding layer 2 is performed so that the casting line 3 intersects the boundary edge 2a with the inclination angle θ, so that the boundary edge 2a of the aluminum cladding layer 2 is not peeled off.

왜냐하면, 제 1 도(b)에 있어서 알미늄크래드층 2의 경계단연 2a부분도 포함시켜 완전히 주조되고 있는 A부분 및 경계단연 2a와 주조라인 3이 충분히 떨어져 있는 C부분에 있어서는 경계단연 2a가 벗겨질 우려는 전혀없다 그리고 A부 및 C부의 사이의 B부에서는 경계단연 2a와 주조라인 3이 겹쳐져 있음과 더불어 양자가 근접하고 있는 것이지만 그 양측부의 A 및 C부에서 알미늄크래드층 2와 내측리드 1이 강고하게 압착되어 있으므로 경계단연 2a부가 벗겨짐을 방지할 수 있다. 따라서 본 실시예에 있어서는 알미늄크래드층 2의 경계단연 2a와 주조라인 3이 겹치든지 근접하든하여도 경계단연 2a가 벗겨지는 일은 전혀 없다.This is because in the first part (b), the boundary edge 2a is peeled off at the part A which is completely cast including the boundary edge 2a of the aluminum cladding layer 2 and the portion C which is sufficiently separated from the boundary edge 2a and the casting line 3. There is no quality concern, and in the B part between the A part and the C part, the boundary edges 2a and the casting line 3 overlap each other, and both are close together, but the aluminum clad layer 2 and the inner lead at the A and C parts of both sides are adjacent. Since 1 is firmly crimped, peeling off of boundary 2a part can be prevented. Therefore, in the present embodiment, even if the boundary edge 2a of the aluminum clad layer 2 and the casting line 3 overlap or are adjacent to each other, the boundary edge 2a does not peel off at all.

그러므로 종래와 같이 반도체칩과의 와이어 접속부인 알미늄크래드층 2가 내측리드 1로부터 벗겨지는 일이 없어진다.Therefore, the aluminum clad layer 2 which is a wire connection part with a semiconductor chip does not peel from the inner lead 1 like conventionally.

또한 본 실시예에서는 알미늄의 크래드층을 형성한 경우에 관해서 설명하였지만 동이나 동합금등 다른 이중금속을 사용한 경우에도 동일효과가 얻어지는 것은 물론이다.In addition, in the present embodiment, the case where an aluminum clad layer is formed has been described, but the same effect can be obtained even when other double metal such as copper or copper alloy is used.

이와같이 본 발명의 리드프레임은 구성되고 작용하는 것이므로 내측리드상에 형성된 크래드층이 주조를 하여도 벗겨지는 일이 없고 내측리드와 반도체칩과의 와이어 접속상태를 항시 양호하게 유지할 수 있어 신뢰성도 높아지는 등의 효과를 발휘한다.As such, the lead frame of the present invention is constructed and functioned so that the cladding layer formed on the inner lead does not peel off even when casting, and the wire connection state between the inner lead and the semiconductor chip can be maintained at all times and the reliability is high. The effect is such.

Claims (1)

내측리드의 선단부의 표면에 알미늄, 동, 동합금등의 크래드층을 갖고 이 선단부에 주조를 하여 이루어지는 리드프레임에 있어서 상기 크래드층의 경계단면과 그 내측리드 선단부의 주조라인을 경사지게 만드는 것을 특징으로 하는 리드프레임.In a lead frame having a cladding layer of aluminum, copper, copper alloy, etc. on the surface of the tip of the inner lead and casting the tip, the boundary surface of the clad layer and the casting line of the inner lead tip are inclined. Leadframe.
KR1019870000194A 1986-03-07 1987-01-13 Lead-frame KR900003874B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP61051057A JPS62208654A (en) 1986-03-07 1986-03-07 Lead frame
JP61-51057 1986-03-07

Publications (2)

Publication Number Publication Date
KR870009465A KR870009465A (en) 1987-10-26
KR900003874B1 true KR900003874B1 (en) 1990-06-02

Family

ID=12876176

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870000194A KR900003874B1 (en) 1986-03-07 1987-01-13 Lead-frame

Country Status (2)

Country Link
JP (1) JPS62208654A (en)
KR (1) KR900003874B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5437096A (en) * 1994-02-28 1995-08-01 Technical Materials, Inc. Method for making a multilayer metal leadframe
JPH0878604A (en) * 1994-08-31 1996-03-22 Nec Corp Lead frame for semiconductor device

Also Published As

Publication number Publication date
KR870009465A (en) 1987-10-26
JPS62208654A (en) 1987-09-12
JPH0365023B2 (en) 1991-10-09

Similar Documents

Publication Publication Date Title
KR850004174A (en) Semiconductor device
US5821154A (en) Semiconductor device
KR900003874B1 (en) Lead-frame
JP2908255B2 (en) Semiconductor device
JP3199028B2 (en) Semiconductor device and manufacturing method thereof
JPH04242966A (en) Resin sealed semiconductor device
JPH03218658A (en) Lead frame and semiconductor device
JPS637029B2 (en)
JP3304447B2 (en) Substrate for mounting electronic components
JPH06181276A (en) Lead for semiconductor device
JP2000049271A (en) Semiconductor device
JPH09223767A (en) Lead frame
JP2000150756A (en) Resin-sealed semiconductor deive and lead frame
JPS63140556A (en) Semiconductor device
JPS5826176B2 (en) Resin-encapsulated semiconductor device
JPH07131170A (en) Electronic device having printed board
JPH0758267A (en) Lead frame
JPS59169161A (en) Semiconductor device
JPS61111553A (en) Semiconductor device
JP2804765B2 (en) Substrate for mounting electronic components
JPS63248155A (en) Semiconductor device
JPH05335437A (en) Semiconductor device
JPH05102381A (en) Semiconductor device
JPS61222244A (en) Semiconductor device
JPH0240938A (en) Hybrid integrated circuit device

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050524

Year of fee payment: 16

LAPS Lapse due to unpaid annual fee