KR940010321B1 - Method of tape automatic bonding inner lead bonding using wedge bonding - Google Patents
Method of tape automatic bonding inner lead bonding using wedge bonding Download PDFInfo
- Publication number
- KR940010321B1 KR940010321B1 KR1019910023951A KR910023951A KR940010321B1 KR 940010321 B1 KR940010321 B1 KR 940010321B1 KR 1019910023951 A KR1019910023951 A KR 1019910023951A KR 910023951 A KR910023951 A KR 910023951A KR 940010321 B1 KR940010321 B1 KR 940010321B1
- Authority
- KR
- South Korea
- Prior art keywords
- bonding
- inner lead
- wedge
- hole
- chip
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- IZJSTXINDUKPRP-UHFFFAOYSA-N aluminum lead Chemical compound [Al].[Pb] IZJSTXINDUKPRP-UHFFFAOYSA-N 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
제 1 도는 종래의 TAB ILB방법을 나타내는 도면.1 is a diagram showing a conventional TAB ILB method.
제 2 도는 본 발명에 따른 내부 리이드 구조를 나타내는 정면도(a)와 수직단면도(b)2 is a front view (a) and a vertical cross-sectional view (b) showing an internal lead structure according to the present invention.
제 3 도는 본 발명의 웨지본딩을 이용하여 LIB하는 방법을 나타내는 도면.3 is a view showing a method for LIB using the wedge bonding of the present invention.
본 발명은 웨지본딩(Wedge bonding)을 이용하여 범프(Bump)를 형성하지 않고 탭(TAB automatic bonding ; 이하 TAB라 칭함)의 내부 리이드 본딩(Inner lead bonding 이하 ILB라 칭함)을 수행하는 방법에 관한 것이다.The present invention relates to a method for performing internal lead bonding (hereinafter referred to as inner lead bonding or ILB) of a tab (TAB automatic bonding (hereinafter referred to as TAB)) without forming a bump using wedge bonding. will be.
최근 전자기기는 고기능화, 대용량화, 소형화 및 박형화의 추세에 있으며, 또한 반도체 소자는 다기능화, 다핀화, 고속화, 고신뢰성 확보 및 표면실장형으로 나아가고 있다.In recent years, electronic devices are becoming more functional, larger in size, smaller in size, and thinner in thickness. Also, semiconductor devices are becoming multifunctional, multi-pin, high speed, high reliability, and surface mounted.
이에 따라 반도체 소자의 I/O증가 및 박형화, 기판면적 감소, 실장밀도향상등 종합적인 실장기술변화에 우수한 기능을 발휘하고 있는 탭기술이 주목되고 있다.As a result, the tap technology that has excellent functions in comprehensive package technology changes such as I / O increase and thinning of semiconductor devices, reduction of substrate area, and improvement in mounting density has been attracting attention.
탭은 초기에 시계, 계산기, 전탁 등의 저핀, 소형칩 적용분야에서 LCD드라이버(Driver), 애식(Asic), 마이콤(Micom), 메모리 소자등의 다핀, 대형칩 적용분야에 이르기까지 응용범위가 확대되고 있다.Taps initially range from low-pin and small chip applications such as clocks, calculators, and deposits to multi-pin and large chip applications such as LCD drivers, asics, micom, and memory devices. It is expanding.
탭의 어셈블리 공정중 가장 중요한 공정이 ILB(Inner lead bonding)공정이며, 이를 제 1 도를 참조하여 상세히 설명하면 다음과 같다.The most important process of the tab assembly process is an inner lead bonding (ILB) process, which will be described in detail with reference to FIG.
폴리이미드(Polyimide, 1)에 접착제로 부착된 내부 리이드 선단하부에 Au범프(Bump, 17)를 형성하거나, 찹의 알루미늄(A1)패드 부위(5)에 Au범프(Bump)를 형성하며 리이드 프레임과 칩을 전기적으로 연결시키기 위해 서모드(Thermode, 18)로 열압착하여 패드의 알루미늄 금속(5)-범프(Bump, 17)-내부 리이드(Inner lead, 14)들이 결합하여 접합되게 된다.The lead frame is formed by forming Au bumps (17) on the lower end of the inner lead attached to the polyimide (1) with an adhesive or by forming Au bumps on the aluminum (A1) pad portion 5 of the chop. In order to electrically connect the chip to the thermal mode (Thermode, 18), the aluminum metal (5) -bump (17) -inner leads (14) of the pad are joined together.
이런 접합방식에는 개개의 리이드를 접속시키는 싱글 본딩(Single bonding) 방식과 다수의 리이드를 동시에 접속시키는 갱 본딩(Gang bonding, multi bonding) 방식이 있다.Such bonding methods include a single bonding method for connecting individual leads and a gang bonding method for connecting a plurality of leads at the same time.
그러나, 상기와 같은 방법은 기술적으로 형성하기가 상당히 어려운 칩 범프나 리이드 범프를 형성하여야 하며 그에 따른 소요비용이 많이 들고, 연결부분에 불량이 생겼을 때 하는 재작업(Rework)을 하기 어려운 문제점이 있다.However, the above method has to form a chip bump or lead bump that is technically difficult to form technically, the cost is high, and there is a problem that it is difficult to rework when a defect occurs in the connection part. .
따라서, 본 발명은 상기와 같은 문제점을 해결하기 위해 범프(Bump)를 형성하지 않고 칩과 내부 리이드를 접속함으로써, 공정을 단순화시키고 소요비용을 절감시킨 웨지본딩(Wedge bonding)을 이용하는 TAB ILB 방법을 제공하는데에 그 목적이 있다.Accordingly, the present invention provides a TAB ILB method using wedge bonding, which simplifies the process and reduces the cost by connecting the chip and the inner lead without forming a bump to solve the above problems. The purpose is to provide.
상기한 목적을 달성하기 위한 본 발명의 구성은 내부 리이드의 선단에 본딩용 구멍(hole)과 칩의 알루미늄 패드부분을 정확히 얼라인(Align)하는 단계와 상기 얼라인된 구멍을 통해 알루미늄 도선으로 웨지본딩(Wedge bonding)을 하는 단계로 이루어지는 것을 특징으로 한다.The configuration of the present invention for achieving the above object is to accurately align the bonding hole and the aluminum pad portion of the chip at the tip of the inner lead and the wedge with aluminum lead through the aligned hole. Characterized in that the step (Wedge bonding) consisting of.
이하, 예시도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the exemplary drawings will be described in detail.
제 1 도는 종래의 TAB ILB 방법을 나타내는 도면이고, 제 2 도는 본 발명에 따른 내부 리이드 구조를 나타내는 정면도(a)와 수직단면도(b)이며, 이는 125㎛ 두께의 폴리이미드 필름(Polyimide film, 1) 상부에 20㎛ 두께에 접착제(2)를 도포한 후, 선단에 둥글게 만들어 접촉용 구멍(hole, 3)이 형성된 35㎛ 두께의 동박 내부 리이드(4)를 접착하고, 상기 접촉용 구멍에 맞게 폴리이미드 필름도 함께 뚫어놓은 구조를 나타낸다.FIG. 1 is a view showing a conventional TAB ILB method, and FIG. 2 is a front view (a) and a vertical cross-sectional view (b) showing an internal lead structure according to the present invention, which is a polyimide film having a thickness of 125 μm. 1) After applying the adhesive 2 to the thickness 20㎛ on the top, and rounded at the tip to adhere the 35μm thick copper foil inner lead (4) having a contact hole (3), to the contact hole The polyimide film suitably also shows the structure which was drilled together.
제 3 도는 본 발명의 웨지본딩(Wedge bonding)을 이용하여 TAB ILB하는 방법을 나타낸 도면으로 내부리이드(4)의 선단에 형성된 본딩용 구멍(bonding hole, 3)이 칩(7)의 알루미늄 패드부분(5)에 정확히 얼라인되면, 상기구멍(3)을 통해서 알루미늄 도선(6)을 쇄기모양으로 웨지본딩한다.3 is a diagram illustrating a method of TAB ILB using wedge bonding according to the present invention, wherein a bonding hole 3 formed at the tip of the inner lead 4 has an aluminum pad portion of the chip 7. Once correctly aligned with (5), the aluminum conductor 6 is wedge-bonded in a wedge shape through the hole 3.
위와 같이 함으로써 칩 패드의 알루미늄(5)-내부 리이드(4)-쇄기모양의 금속도선(6)이 함께 전기적으로 접속되게 되며, 이후 본딩용 금속도선의 절단은 초음파의 입, 출력을 접촉센서로 제어하는 별도의 수단을 사용한다.As described above, the aluminum (5), the inner lead (4) and the wedge-shaped metal conductors 6 of the chip pad are electrically connected together. Subsequently, the cutting of the bonding metal conductors uses the input and output of ultrasonic waves to the contact sensor. Use a separate means to control.
이상에서 설명된 바와 같이 본 발명에 의하면, 범프(Bump)를 사용하지 않고 칩과 내부 리이드를 접속시킴으로써 공정을 단순화시키고, 소요비용을 절감시키며 접속된 부위가 불량일 때 다시 작업하는 재작업(Rework)을 쉽게 할 수 있는 효과가 있다.As described above, according to the present invention, the process is simplified by connecting the chip and the inner lead without using a bump, reducing the cost and reworking when the connected part is defective. There is an effect that can be easily done.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910023951A KR940010321B1 (en) | 1991-12-23 | 1991-12-23 | Method of tape automatic bonding inner lead bonding using wedge bonding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910023951A KR940010321B1 (en) | 1991-12-23 | 1991-12-23 | Method of tape automatic bonding inner lead bonding using wedge bonding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930014908A KR930014908A (en) | 1993-07-23 |
| KR940010321B1 true KR940010321B1 (en) | 1994-10-22 |
Family
ID=19325612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910023951A KR940010321B1 (en) | 1991-12-23 | 1991-12-23 | Method of tape automatic bonding inner lead bonding using wedge bonding |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR940010321B1 (en) |
-
1991
- 1991-12-23 KR KR1019910023951A patent/KR940010321B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR930014908A (en) | 1993-07-23 |
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