KR900002663B1 - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

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Publication number
KR900002663B1
KR900002663B1 KR1019860008671A KR860008671A KR900002663B1 KR 900002663 B1 KR900002663 B1 KR 900002663B1 KR 1019860008671 A KR1019860008671 A KR 1019860008671A KR 860008671 A KR860008671 A KR 860008671A KR 900002663 B1 KR900002663 B1 KR 900002663B1
Authority
KR
South Korea
Prior art keywords
electric
potential
bit line
signal
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860008671A
Other languages
English (en)
Korean (ko)
Other versions
KR870006622A (ko
Inventor
야스히로 고시니
가즈야시 후지시마
마사기 구마노야
히데시 미야다께
히데도 히다까
사쓰미 도오사까
Original Assignee
미쓰비시 뎅기 가부시끼가이샤
시기 모리야
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 뎅기 가부시끼가이샤, 시기 모리야 filed Critical 미쓰비시 뎅기 가부시끼가이샤
Publication of KR870006622A publication Critical patent/KR870006622A/ko
Application granted granted Critical
Publication of KR900002663B1 publication Critical patent/KR900002663B1/ko
Expired legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
KR1019860008671A 1985-12-06 1986-10-16 반도체 기억장치 Expired KR900002663B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-275566 1985-12-06
JP60275566A JPS62134894A (ja) 1985-12-06 1985-12-06 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR870006622A KR870006622A (ko) 1987-07-13
KR900002663B1 true KR900002663B1 (ko) 1990-04-21

Family

ID=17557232

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860008671A Expired KR900002663B1 (ko) 1985-12-06 1986-10-16 반도체 기억장치

Country Status (3)

Country Link
US (1) US4809230A (https=)
JP (1) JPS62134894A (https=)
KR (1) KR900002663B1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5226147A (en) * 1987-11-06 1993-07-06 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device for simple cache system
US5031150A (en) * 1988-08-26 1991-07-09 Kabushiki Kaisha Toshiba Control circuit for a semiconductor memory device and semiconductor memory system
JP2818203B2 (ja) * 1988-08-26 1998-10-30 株式会社東芝 ダイナミック型メモリ及びダイナミック型メモリシステム
GB9007793D0 (en) * 1990-04-06 1990-06-06 Foss Richard C Dram cell plate and precharge voltage generator
US5260904A (en) * 1990-05-31 1993-11-09 Oki Electric Industry Co., Ltd. Data bus clamp circuit for a semiconductor memory device
JPH0438697A (ja) * 1990-05-31 1992-02-07 Oki Electric Ind Co Ltd 半導体記憶装置のデータバスクランプ回路
US5317212A (en) * 1993-03-19 1994-05-31 Wahlstrom Sven E Dynamic control of configurable logic
KR0179551B1 (ko) * 1995-11-01 1999-04-15 김주용 고전위 발생기
US5602785A (en) * 1995-12-13 1997-02-11 Micron Technology, Inc. P-channel sense amplifier pull-up circuit with a timed pulse for use in DRAM memories having non-bootstrapped word lines
KR100486222B1 (ko) * 1997-12-12 2005-08-01 삼성전자주식회사 반도체 메모리 장치의 워드 라인 풀업 드라이버 제어 회로
US6021072A (en) * 1998-07-27 2000-02-01 Motorola, Inc. Method and apparatus for precharging bitlines in a nonvolatile memory

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5358736A (en) * 1976-11-08 1978-05-26 Toshiba Corp Input/output control system for mos dynamic random access memory
US4543501A (en) * 1978-09-22 1985-09-24 Texas Instruments Incorporated High performance dynamic sense amplifier with dual channel grounding transistor
US4291392A (en) * 1980-02-06 1981-09-22 Mostek Corporation Timing of active pullup for dynamic semiconductor memory
JPS59132492A (ja) * 1982-12-22 1984-07-30 Fujitsu Ltd 半導体記憶装置
JPS59139195A (ja) * 1983-01-26 1984-08-09 Mitsubishi Electric Corp 半導体記憶装置
US4528696A (en) * 1983-04-25 1985-07-09 General Electric Company Arrangement for providing signalling tones and volume control signals
JPS59203298A (ja) * 1983-05-04 1984-11-17 Nec Corp 半導体メモリ
JPS60198620A (ja) * 1984-03-21 1985-10-08 Sharp Corp Ｌｓｉ化したタイミング発生回路
US4633443A (en) * 1984-07-09 1986-12-30 Texas Instruments Incorporated Dynamic read/write memory circuits with equal-sized dummy and storage capacitors
US4638459A (en) * 1985-01-31 1987-01-20 Standard Microsystems Corp. Virtual ground read only memory

Also Published As

Publication number Publication date
US4809230A (en) 1989-02-28
JPH0522316B2 (https=) 1993-03-29
KR870006622A (ko) 1987-07-13
JPS62134894A (ja) 1987-06-17

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