KR890700263A - 다층 레지스트 구조를 가진 부품 및 이의 제조방법 - Google Patents

다층 레지스트 구조를 가진 부품 및 이의 제조방법

Info

Publication number
KR890700263A
KR890700263A KR1019880700803A KR880700803A KR890700263A KR 890700263 A KR890700263 A KR 890700263A KR 1019880700803 A KR1019880700803 A KR 1019880700803A KR 880700803 A KR880700803 A KR 880700803A KR 890700263 A KR890700263 A KR 890700263A
Authority
KR
South Korea
Prior art keywords
manufacturing
parts
multilayer resist
resist structure
multilayer
Prior art date
Application number
KR1019880700803A
Other languages
English (en)
Other versions
KR910007532B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR890700263A publication Critical patent/KR890700263A/ko
Application granted granted Critical
Publication of KR910007532B1 publication Critical patent/KR910007532B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1019880700803A 1986-11-12 1987-10-13 다층 레지스트 구조를 가진 부품 및 이의 제조 방법 KR910007532B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US92968386A 1986-11-12 1986-11-12
US86-929,683 1986-11-12
PCT/US1987/002611 WO1988003703A1 (en) 1986-11-12 1987-10-13 Multilayer resist structure

Publications (2)

Publication Number Publication Date
KR890700263A true KR890700263A (ko) 1989-03-10
KR910007532B1 KR910007532B1 (ko) 1991-09-27

Family

ID=25458273

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880700803A KR910007532B1 (ko) 1986-11-12 1987-10-13 다층 레지스트 구조를 가진 부품 및 이의 제조 방법

Country Status (5)

Country Link
EP (1) EP0289595A1 (ko)
JP (1) JPH01501345A (ko)
KR (1) KR910007532B1 (ko)
IL (1) IL84184A0 (ko)
WO (1) WO1988003703A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171401A (en) * 1990-06-04 1992-12-15 Eastman Kodak Company Plasma etching indium tin oxide
US5453157A (en) * 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
US11487205B2 (en) 2017-11-17 2022-11-01 Mitsui Chemicals, Inc. Semiconductor element intermediate, composition for forming metal-containing film, method of producing semiconductor element intermediate, and method of producing semiconductor element

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451971A (en) * 1982-08-02 1984-06-05 Fairchild Camera And Instrument Corporation Lift-off wafer processing
KR890003903B1 (ko) * 1983-06-29 1989-10-10 가부시끼가이샤 히다찌세이사꾸쇼 패턴 형성 방법
US4595649A (en) * 1985-02-19 1986-06-17 Allied Corporation Glassy TiO2 polymer films as electron beam charge dissipation layers

Also Published As

Publication number Publication date
KR910007532B1 (ko) 1991-09-27
WO1988003703A1 (en) 1988-05-19
EP0289595A1 (en) 1988-11-09
IL84184A0 (en) 1988-03-31
JPH01501345A (ja) 1989-05-11

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
NORF Unpaid initial registration fee