IL84184A0 - Multilayer resist structure - Google Patents

Multilayer resist structure

Info

Publication number
IL84184A0
IL84184A0 IL84184A IL8418487A IL84184A0 IL 84184 A0 IL84184 A0 IL 84184A0 IL 84184 A IL84184 A IL 84184A IL 8418487 A IL8418487 A IL 8418487A IL 84184 A0 IL84184 A0 IL 84184A0
Authority
IL
Israel
Prior art keywords
multilayer resist
resist structure
multilayer
resist
Prior art date
Application number
IL84184A
Other languages
English (en)
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IL84184A0 publication Critical patent/IL84184A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Architecture (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
IL84184A 1986-11-12 1987-10-16 Multilayer resist structure IL84184A0 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US92968386A 1986-11-12 1986-11-12

Publications (1)

Publication Number Publication Date
IL84184A0 true IL84184A0 (en) 1988-03-31

Family

ID=25458273

Family Applications (1)

Application Number Title Priority Date Filing Date
IL84184A IL84184A0 (en) 1986-11-12 1987-10-16 Multilayer resist structure

Country Status (5)

Country Link
EP (1) EP0289595A1 (xx)
JP (1) JPH01501345A (xx)
KR (1) KR910007532B1 (xx)
IL (1) IL84184A0 (xx)
WO (1) WO1988003703A1 (xx)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171401A (en) * 1990-06-04 1992-12-15 Eastman Kodak Company Plasma etching indium tin oxide
US5453157A (en) * 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
US11487205B2 (en) 2017-11-17 2022-11-01 Mitsui Chemicals, Inc. Semiconductor element intermediate, composition for forming metal-containing film, method of producing semiconductor element intermediate, and method of producing semiconductor element

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451971A (en) * 1982-08-02 1984-06-05 Fairchild Camera And Instrument Corporation Lift-off wafer processing
KR890003903B1 (ko) * 1983-06-29 1989-10-10 가부시끼가이샤 히다찌세이사꾸쇼 패턴 형성 방법
US4595649A (en) * 1985-02-19 1986-06-17 Allied Corporation Glassy TiO2 polymer films as electron beam charge dissipation layers

Also Published As

Publication number Publication date
KR910007532B1 (ko) 1991-09-27
WO1988003703A1 (en) 1988-05-19
EP0289595A1 (en) 1988-11-09
KR890700263A (ko) 1989-03-10
JPH01501345A (ja) 1989-05-11

Similar Documents

Publication Publication Date Title
GB2187674B (en) Multi-layer polymeric structure
EP0265797A3 (en) Synchrotron
EP0261664A3 (en) Magnetic multilayer structure
EP0271097A3 (en) Laminated structures
EP0230344A3 (en) Laminated structure
IL84298A0 (en) Improved photosensitive laminate
GB2201201B (en) Gasketed structure
GB8626129D0 (en) Pile-framed structure
ZA867247B (en) Multilayered structure
EP0228249A3 (en) Multi-layer laminated structures
IL90868A0 (en) Multilayered structures
GB8602331D0 (en) Multilayer systems
GB2197681B (en) Locksets
GB2211352B (en) Multilayer wiring structure
GB8711425D0 (en) Notice board
GB8629409D0 (en) Multilayered structures
IL84184A0 (en) Multilayer resist structure
EP0198337A3 (en) Multilayered structure
GB8620372D0 (en) Structures
GB8602330D0 (en) Multilayer systems
GB8719491D0 (en) Structures
GB2189493B (en) Self-developing resist
GB8710368D0 (en) Structures
GB8628911D0 (en) Fabricating metal-clad laminate
ZA895220B (en) Multilayered structures