GB8728750D0 - Multilayered structures - Google Patents

Multilayered structures

Info

Publication number
GB8728750D0
GB8728750D0 GB878728750A GB8728750A GB8728750D0 GB 8728750 D0 GB8728750 D0 GB 8728750D0 GB 878728750 A GB878728750 A GB 878728750A GB 8728750 A GB8728750 A GB 8728750A GB 8728750 D0 GB8728750 D0 GB 8728750D0
Authority
GB
United Kingdom
Prior art keywords
multilayered structures
multilayered
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878728750A
Other versions
GB2199593A (en
GB2199593B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB8728750D0 publication Critical patent/GB8728750D0/en
Publication of GB2199593A publication Critical patent/GB2199593A/en
Application granted granted Critical
Publication of GB2199593B publication Critical patent/GB2199593B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)
GB8728750A 1986-12-09 1987-12-09 Method and apparatus for fabrication of multilayered structures. Expired - Fee Related GB2199593B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB868629409A GB8629409D0 (en) 1986-12-09 1986-12-09 Multilayered structures

Publications (3)

Publication Number Publication Date
GB8728750D0 true GB8728750D0 (en) 1988-01-27
GB2199593A GB2199593A (en) 1988-07-13
GB2199593B GB2199593B (en) 1991-08-14

Family

ID=10608702

Family Applications (2)

Application Number Title Priority Date Filing Date
GB868629409A Pending GB8629409D0 (en) 1986-12-09 1986-12-09 Multilayered structures
GB8728750A Expired - Fee Related GB2199593B (en) 1986-12-09 1987-12-09 Method and apparatus for fabrication of multilayered structures.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB868629409A Pending GB8629409D0 (en) 1986-12-09 1986-12-09 Multilayered structures

Country Status (4)

Country Link
EP (1) EP0292533A1 (en)
JP (1) JPH01502057A (en)
GB (2) GB8629409D0 (en)
WO (1) WO1988004332A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8823047D0 (en) * 1988-09-30 1988-11-09 Imperial College Fabrication of semiconductor nanostructures
US5486949A (en) 1989-06-20 1996-01-23 The Dow Chemical Company Birefringent interference polarizer
US6423419B1 (en) 1995-07-19 2002-07-23 Teer Coatings Limited Molybdenum-sulphur coatings
GB9514773D0 (en) * 1995-07-19 1995-09-20 Teer Coatings Ltd Methods for improving the sputter deposition of metal-sulphur coatings e.g.molybdenum disulphide(MoS2) coatings
JP3022328B2 (en) * 1996-06-19 2000-03-21 日本電気株式会社 Thin film formation method

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472751A (en) * 1965-06-16 1969-10-14 Ion Physics Corp Method and apparatus for forming deposits on a substrate by cathode sputtering using a focussed ion beam
GB1057119A (en) * 1965-11-16 1967-02-01 Hermsdorf Keramik Veb Method of and apparatus for the production of thin films on a substrate or carrier by ion beam sputtering
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
US4222814A (en) * 1978-01-26 1980-09-16 Sotek Corporation Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound
US4142958A (en) * 1978-04-13 1979-03-06 Litton Systems, Inc. Method for fabricating multi-layer optical films
US4261771A (en) * 1979-10-31 1981-04-14 Bell Telephone Laboratories, Incorporated Method of fabricating periodic monolayer semiconductor structures by molecular beam epitaxy
US4322453A (en) * 1980-12-08 1982-03-30 International Business Machines Corporation Conductivity WSi2 (tungsten silicide) films by Pt preanneal layering

Also Published As

Publication number Publication date
JPH01502057A (en) 1989-07-13
GB2199593A (en) 1988-07-13
WO1988004332A1 (en) 1988-06-16
GB2199593B (en) 1991-08-14
GB8629409D0 (en) 1987-01-21
EP0292533A1 (en) 1988-11-30

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941209