GB8823047D0 - Fabrication of semiconductor nanostructures - Google Patents

Fabrication of semiconductor nanostructures

Info

Publication number
GB8823047D0
GB8823047D0 GB888823047A GB8823047A GB8823047D0 GB 8823047 D0 GB8823047 D0 GB 8823047D0 GB 888823047 A GB888823047 A GB 888823047A GB 8823047 A GB8823047 A GB 8823047A GB 8823047 D0 GB8823047 D0 GB 8823047D0
Authority
GB
United Kingdom
Prior art keywords
fabrication
semiconductor nanostructures
nanostructures
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GB888823047A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial College of Science Technology and Medicine
Original Assignee
Imperial College of Science Technology and Medicine
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial College of Science Technology and Medicine filed Critical Imperial College of Science Technology and Medicine
Priority to GB888823047A priority Critical patent/GB8823047D0/en
Publication of GB8823047D0 publication Critical patent/GB8823047D0/en
Priority to PCT/GB1989/001162 priority patent/WO1990003659A1/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
GB888823047A 1988-09-30 1988-09-30 Fabrication of semiconductor nanostructures Pending GB8823047D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB888823047A GB8823047D0 (en) 1988-09-30 1988-09-30 Fabrication of semiconductor nanostructures
PCT/GB1989/001162 WO1990003659A1 (en) 1988-09-30 1989-09-29 Fabrication of semiconductor nanostructures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB888823047A GB8823047D0 (en) 1988-09-30 1988-09-30 Fabrication of semiconductor nanostructures

Publications (1)

Publication Number Publication Date
GB8823047D0 true GB8823047D0 (en) 1988-11-09

Family

ID=10644561

Family Applications (1)

Application Number Title Priority Date Filing Date
GB888823047A Pending GB8823047D0 (en) 1988-09-30 1988-09-30 Fabrication of semiconductor nanostructures

Country Status (2)

Country Link
GB (1) GB8823047D0 (en)
WO (1) WO1990003659A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10044040A1 (en) * 2000-08-30 2002-03-14 Univ Berlin Tech Method for improving the efficiency of epitaxially produced quantum dot semiconductor devices with one or more quantum dot layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
GB8629409D0 (en) * 1986-12-09 1987-01-21 Evans B L Multilayered structures

Also Published As

Publication number Publication date
WO1990003659A1 (en) 1990-04-05

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