KR890016715A - 투명하고 전도성인 산화아연 레이어의 제조방법 - Google Patents

투명하고 전도성인 산화아연 레이어의 제조방법 Download PDF

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Publication number
KR890016715A
KR890016715A KR1019890004518A KR890004518A KR890016715A KR 890016715 A KR890016715 A KR 890016715A KR 1019890004518 A KR1019890004518 A KR 1019890004518A KR 890004518 A KR890004518 A KR 890004518A KR 890016715 A KR890016715 A KR 890016715A
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South Korea
Prior art keywords
substrate
zinc oxide
layer
heated
crystal structure
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KR1019890004518A
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English (en)
Inventor
오크틱 세너
페이턴츠 디비젼 아이씨아이
Original Assignee
그래함 도날드 아놀드
임페리알 케미칼 인더스트리스 피엘씨
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Application filed by 그래함 도날드 아놀드, 임페리알 케미칼 인더스트리스 피엘씨 filed Critical 그래함 도날드 아놀드
Publication of KR890016715A publication Critical patent/KR890016715A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1291—Process of deposition of the inorganic material by heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

내용 없음

Description

투명하고 전도성인 산화아연 레이어의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 방법을 실행하는데 적당한 장치를 표시한 것이다, 제 2 도는 장치내 노즐 배열의 저면도이다.

Claims (10)

  1. 열적으로 분해가능한 산화아연 전구체의 용액을 작은 방울(6a,6b)로 전환시키고, 이 작은 방울(6b)를 가열하여 용매를 증발시키며 기판을 전구체를 분해하기에 충분히 높은 온도까지 가열하며 또한 (a) 용매가 기판이나 산화아연 레이어와 접촉하게 됨없이 용매를 증발시키고 미립자 잔사(12)를 얻기 위해 상기 작은 방울을 복사 가열(10)하며 (b) 가열된 기판이나 기판상에 만들어진 산화아연의 레이어와 잔사가 접촉하게 되는 것으로 구성되는, 기판(8)상의 투명하고 전기적 전도성인 산화아연의 레이어(15)를 제조하는 방법.
  2. 제 1 항에 있어서, 가열하는 것이 잔사가 산화아연 레이어나 기판의 표면에 도달하기 전에 승화되기에 충분한 방법.
  3. 제 1 항에 있어서, 기판이 복사 가열(14)에 의해 가열되는 방법.
  4. 제 3 항에 있어서, 기판이 350-450℃까지 가열되는 방법.
  5. 전기한 항의 어느 한 항에 있어서, 용액이 압력하에서 구멍(2)를 통해 유출됨에 의해 작용 방울로 전환되는 방법.
  6. 제 5 항에 있어서, 비산화 담체 기체의 스트림이 구멍 근처에 위치한 최소한 하나의 유출구(4)로부터 유출되고 구멍으로부터 방출된 작은 방울과 융합되는 방법.
  7. 전기한 항의 어느 한 항에 있어서, 제조된 산화아연의 레이어가 비산화 대기하에서 최소한 5분 동안 390-500℃까지 가열됨에 의해 아닐링되는 방법.
  8. 제 7 항에 있어서, 비산화 대기가 질소와 수소의 혼합물로 구성되는 방법.
  9. 아연 원자 대 산소 원자의 비가 1:0.8 내지 1:0.97이고 산화아연이 특징적으로 육각형의 결정 구조를 가지며 결정(crystallite)은 이것의 (0002) 면이 주로 기판의 표면에 평행하도록 배향되는 결정 구조를 가진, 기판(8)의 표면에 지지되어 있는 투명하고 전기적 전도성인 산화아연의 레이어(15).
  10. 아연 원자 대 산소 원자의 비가 1:0.8 내지 1:0.97이고 토판트가 0.05-0.6at%의 안듐, 알루미늄 또는 터블을 포함하며 산화아연이 특징적으로 육각형의 결정구조를 가지며 결정(crystallite)은 이것의 (0002) 면이 주로 기판의 표면에 평행하도록 배향되는 결정 구조를 가진, 기판(8)의 표면에지지되어 있는 투명하고 전기적 전도성이며 도프된 산화아연의 레이어(15).
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890004518A 1988-04-06 1989-04-06 투명하고 전도성인 산화아연 레이어의 제조방법 KR890016715A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8808036.1 1988-04-06
GB8808036A GB2216903A (en) 1988-04-06 1988-04-06 Transparent conductive zinc oxide layer

Publications (1)

Publication Number Publication Date
KR890016715A true KR890016715A (ko) 1989-11-29

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KR1019890004518A KR890016715A (ko) 1988-04-06 1989-04-06 투명하고 전도성인 산화아연 레이어의 제조방법

Country Status (6)

Country Link
EP (1) EP0336574A1 (ko)
JP (1) JPH01301515A (ko)
KR (1) KR890016715A (ko)
AU (1) AU609277B2 (ko)
BR (1) BR8901586A (ko)
GB (2) GB2216903A (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2661623B1 (fr) * 1989-04-04 1992-07-17 Commissariat Energie Atomique Systeme d'injection d'aerosol pour elaboration de couches composites par pyrolyse.
US5190592A (en) * 1990-05-02 1993-03-02 Commissariat A L'energie Atomique Aerosol injection system for producing composite layers by pyrolysis
DE4304679C2 (de) * 1992-02-17 1996-03-21 Mitsubishi Electric Corp Verfahren zur Herstellung einer dünnen dielektrischen Schicht eines Oxid-Systems unter Verwendung des CVD-Verfahrens
DE19719162C2 (de) * 1997-05-06 2001-02-08 Fraunhofer Ges Forschung Verfahren zur Herstellung einer elektrisch leitenden ZnO enthaltenden Schicht auf einem Substrat
KR20010066533A (ko) * 1999-12-31 2001-07-11 정종순 안정한 코팅용 기화물 생성방법 및 장치
JP4114060B2 (ja) 2003-02-06 2008-07-09 セイコーエプソン株式会社 受光素子の製造方法
US8354294B2 (en) * 2006-01-24 2013-01-15 De Rochemont L Pierre Liquid chemical deposition apparatus and process and products therefrom
WO2013038484A1 (ja) * 2011-09-13 2013-03-21 東芝三菱電機産業システム株式会社 酸化膜成膜方法および酸化膜成膜装置
JP6510667B2 (ja) * 2015-10-19 2019-05-08 東芝三菱電機産業システム株式会社 成膜装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB704793A (en) * 1951-04-11 1954-03-03 Pittsburgh Plate Glass Co Method of producing an electroconductive article
BE538192A (ko) * 1953-02-24 1900-01-01
US2791521A (en) * 1953-04-02 1957-05-07 Gen Electric Electric resistance device provided with zinc oxide electroconductive coating
DE1496590C3 (de) * 1964-10-16 1973-10-31 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Verfahren zur Herstellung von warme reflektierenden SnO tief 2 Schichten mit reproduzierbaren optischen und elektrischen Eigenschaften auf Tragern
US4006378A (en) * 1975-10-01 1977-02-01 General Electric Company Optical coating with selectable transmittance characteristics and method of making the same
DE3166609D1 (en) * 1980-07-28 1984-11-15 Monsanto Co Improved method for producing semiconductor grade silicon
GB2131792A (en) * 1982-12-10 1984-06-27 Glaverbel Vitreous material bearing a multi-layer coating and method and apparatus for forming such coating
GB2139612B (en) * 1983-05-13 1987-03-11 Glaverbel Coating a hot vitreous substrate
DE3684414D1 (de) * 1985-05-10 1992-04-23 Gen Electric Verfahren und vorrichtung zum selektiven chemischen aufdampfen.

Also Published As

Publication number Publication date
EP0336574A1 (en) 1989-10-11
GB8808036D0 (en) 1988-05-05
GB2216903A (en) 1989-10-18
AU3245689A (en) 1989-10-19
BR8901586A (pt) 1989-11-21
JPH01301515A (ja) 1989-12-05
GB8905797D0 (en) 1989-04-26
AU609277B2 (en) 1991-04-26

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