KR890011018A - 진공장치 - Google Patents

진공장치 Download PDF

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Publication number
KR890011018A
KR890011018A KR1019880017147A KR880017147A KR890011018A KR 890011018 A KR890011018 A KR 890011018A KR 1019880017147 A KR1019880017147 A KR 1019880017147A KR 880017147 A KR880017147 A KR 880017147A KR 890011018 A KR890011018 A KR 890011018A
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KR
South Korea
Prior art keywords
vacuum
working chamber
prechamber
sample
connecting portions
Prior art date
Application number
KR1019880017147A
Other languages
English (en)
Other versions
KR930000598B1 (ko
Inventor
야스오 무나가타
미네오 고토우
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR890011018A publication Critical patent/KR890011018A/ko
Application granted granted Critical
Publication of KR930000598B1 publication Critical patent/KR930000598B1/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/18Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00Material or article handling
    • Y10S414/135Associated with semiconductor wafer handling
    • Y10S414/139Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

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  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음

Description

진공장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 진공워킹챔버와 진공프리챔버를 분리시킨 상태를 나타낸 측면도.
제 2도는 진공워킹챔버와 진공프리챔버를 연결시킨 상태를 나타낸 측면도.
제 3도는 진공프리챔버의 시료공급부에 대한 확대 사시도.

Claims (8)

  1. 시료(A)에 대해 일정한 프로세스를 수행하는 진공워킹챔버(1)와, 진공상태에서 상기 진공워킹챔버(1)내부의 시료를 교환하는 진공프리챔버(2)로 이루어진 진공장치에 있어서, 상기 진공워킹챔버(1)와 진공프리챔버(2)가 각각 별개로 형성되어 연결 및 분리가 자유롭게 되도록 구성됨과 더불어, 양 챔버(1,2)의 연결부(10,11)나 이 연결부(10,11)의 하단부에는 그 연결부(10,11)를 개폐시키는 게이트밸브(12,13)가 설치된 것을 특징으로 하는 진공장치.
  2. 제 1 항에 있어서, 상기 진공워킹챔버(1)와 진공프리챔버(2)중 최소한 어느 한쪽을 다른쪽 방향으로 자유롭게 평행이동시켜 양 챔버(1,2)를 연결시키거나 분리시키도록 구성된 것을 특징으로 하는 진공장치.
  3. 제 1 항에 있어서, 상기 진공워킹챔버(1)와 진공프리챔버(2)중 최소한 한쪽을 다른쪽 방향으로 자유롭게 회전시켜 양 챔버(1,2)를 연결시키거나 분리시키도록 구성된 것을 특징으로 하는 진공장치.
  4. 제 1 항에 있어서, 상기 진공워킹챔버(1)와 진공프리챔버(2)는 그 연결부(10,11)가 대치.고정되고, 양 연결부(10,11)사이에 게이트밸브(12,13)가 수납된 중간분리체(16)가 자유롭게 끼워져 장착되도록 설치된 것을 특징으로 하는 진공장치.
  5. 제 1 항 내지 제 4 항중 어느 한항에 있어서, 상기 진공워킹챔버(1)에서의 프로세스는 에너지비임으로 시료(A)에 묘사패턴을 형성시키는 것임을 특징으로 하는 진공장치.
  6. 제 5 항에 있어서, 상기 에너지비임이 전자선인 것을 특징으로 하는 진공장치.
  7. 제 1 항 내지 제 4 항중 어느 한항에 있어서, 상기 진공워킹챔버(1)에서의 프로세스는 에너지비임으로 시료(A)를 측정하거나 관찰하는 것임을 특징으로 하는 진공장치.
  8. 제 7 항에 있어서, 상기 에너지비임이 전자선인 것을 특징으로 하는 진공장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880017147A 1987-12-21 1988-12-21 진공장치 KR930000598B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62323334A JPH0668962B2 (ja) 1987-12-21 1987-12-21 真空装置及びそれを用いてプロセスを行う方法
JP62-323334 1987-12-21
JP87-323334 1987-12-21

Publications (2)

Publication Number Publication Date
KR890011018A true KR890011018A (ko) 1989-08-12
KR930000598B1 KR930000598B1 (ko) 1993-01-25

Family

ID=18153638

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880017147A KR930000598B1 (ko) 1987-12-21 1988-12-21 진공장치

Country Status (3)

Country Link
US (1) US4948979A (ko)
JP (1) JPH0668962B2 (ko)
KR (1) KR930000598B1 (ko)

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JP2555973B2 (ja) * 1994-04-08 1996-11-20 日本電気株式会社 超高真空搬送装置
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TW499696B (en) * 1999-04-27 2002-08-21 Tokyo Electron Ltd Processing apparatus and processing method
US6414328B1 (en) 1999-11-05 2002-07-02 Kair Nussupov Method and apparatus for the conveying and positioning of ion implantation targets
US6800172B2 (en) * 2002-02-22 2004-10-05 Micron Technology, Inc. Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
US6814813B2 (en) 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US6858264B2 (en) * 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6838114B2 (en) 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6955725B2 (en) 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
JP4182539B2 (ja) * 2002-09-30 2008-11-19 日本精工株式会社 位置決め装置
US6926775B2 (en) 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
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US7235138B2 (en) 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
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US7906393B2 (en) * 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
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JP4406666B2 (ja) * 2008-02-20 2010-02-03 シャープ株式会社 真空処理装置および真空処理工場
JP4766500B2 (ja) * 2009-08-26 2011-09-07 シャープ株式会社 真空処理装置、および真空処理工場
JP5669514B2 (ja) * 2010-10-14 2015-02-12 キヤノン株式会社 処理設備、保守装置、および物品の製造方法
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Also Published As

Publication number Publication date
JPH0668962B2 (ja) 1994-08-31
JPH01163951A (ja) 1989-06-28
US4948979A (en) 1990-08-14
KR930000598B1 (ko) 1993-01-25

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