KR880702008A - E 모드 fet 및 d 모드 fet vlsi 회로용 쇼트키 다이오드 논리 회로 - Google Patents

E 모드 fet 및 d 모드 fet vlsi 회로용 쇼트키 다이오드 논리 회로

Info

Publication number
KR880702008A
KR880702008A KR1019880700565A KR880700565A KR880702008A KR 880702008 A KR880702008 A KR 880702008A KR 1019880700565 A KR1019880700565 A KR 1019880700565A KR 880700565 A KR880700565 A KR 880700565A KR 880702008 A KR880702008 A KR 880702008A
Authority
KR
South Korea
Prior art keywords
mode fet
logic circuit
schottky diode
vlsi circuits
diode logic
Prior art date
Application number
KR1019880700565A
Other languages
English (en)
Inventor
게리 엠. 리
안드르제즈 펙잘스키
Original Assignee
허니웰 인코오포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허니웰 인코오포레이티드 filed Critical 허니웰 인코오포레이티드
Publication of KR880702008A publication Critical patent/KR880702008A/ko

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0956Schottky diode FET logic
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00369Modifications for compensating variations of temperature, supply voltage or other physical parameters
    • H03K19/00384Modifications for compensating variations of temperature, supply voltage or other physical parameters in field effect transistor circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
KR1019880700565A 1986-09-23 1988-05-21 E 모드 fet 및 d 모드 fet vlsi 회로용 쇼트키 다이오드 논리 회로 KR880702008A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/910,545 US4798979A (en) 1986-09-23 1986-09-23 Schottky diode logic for E-mode FET/D-mode FET VLSI circuits
PCT/US1987/001990 WO1988002580A1 (en) 1986-09-23 1987-08-17 Schottky diode logic for e-mode fet/d-mode fet vlsi circuits

Publications (1)

Publication Number Publication Date
KR880702008A true KR880702008A (ko) 1988-11-07

Family

ID=25428970

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880700565A KR880702008A (ko) 1986-09-23 1988-05-21 E 모드 fet 및 d 모드 fet vlsi 회로용 쇼트키 다이오드 논리 회로

Country Status (10)

Country Link
US (1) US4798979A (ko)
EP (1) EP0324742A1 (ko)
JP (1) JPH02500790A (ko)
KR (1) KR880702008A (ko)
AU (1) AU7853887A (ko)
CA (1) CA1262565A (ko)
DK (1) DK279388A (ko)
IL (1) IL83642A0 (ko)
WO (1) WO1988002580A1 (ko)
ZA (1) ZA876544B (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4882507B1 (en) * 1987-07-31 1993-03-16 Output circuit of semiconductor integrated circuit device
US4965863A (en) * 1987-10-02 1990-10-23 Cray Computer Corporation Gallium arsenide depletion made MESFIT logic cell
US4931670A (en) * 1988-12-14 1990-06-05 American Telephone And Telegraph Company TTL and CMOS logic compatible GAAS logic family
US5001367A (en) * 1989-04-14 1991-03-19 Thunderbird Technologies, Inc. High speed complementary field effect transistor logic circuits
US4950924A (en) * 1989-05-11 1990-08-21 Northern Telecom Limited High speed noise immune bipolar logic family
US5107152A (en) * 1989-09-08 1992-04-21 Mia-Com, Inc. Control component for a three-electrode device
US5182473A (en) * 1990-07-31 1993-01-26 Cray Research, Inc. Emitter emitter logic (EEL) and emitter collector dotted logic (ECDL) families
JPH04105420A (ja) * 1990-08-27 1992-04-07 Mitsubishi Electric Corp 半導体集積回路
US5247212A (en) * 1991-01-31 1993-09-21 Thunderbird Technologies, Inc. Complementary logic input parallel (clip) logic circuit family
US5389836A (en) * 1993-06-04 1995-02-14 International Business Machines Corporation Branch isolation circuit for cascode voltage switch logic
CN104202024B (zh) * 2014-08-29 2017-06-30 杭州士兰微电子股份有限公司 适合高压浮地的开漏电路
CN113452362B (zh) * 2017-04-10 2022-07-08 肖特基Lsi公司 实现nand门系统和实现nor门系统的集成电路

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4071774A (en) * 1975-12-24 1978-01-31 Tokyo Shibaura Electric Co., Ltd. Integrated injection logic with both fan in and fan out Schottky diodes, serially connected between stages
US4300064A (en) * 1979-02-12 1981-11-10 Rockwell International Corporation Schottky diode FET logic integrated circuit
US4418292A (en) * 1980-05-28 1983-11-29 Raytheon Company Logic gate having a noise immunity circuit
US4400636A (en) * 1980-12-05 1983-08-23 Ibm Corporation Threshold voltage tolerant logic
US4405870A (en) * 1980-12-10 1983-09-20 Rockwell International Corporation Schottky diode-diode field effect transistor logic
US4404480A (en) * 1982-02-01 1983-09-13 Sperry Corporation High speed-low power gallium arsenide basic logic circuit
US4494016A (en) * 1982-07-26 1985-01-15 Sperry Corporation High performance MESFET transistor for VLSI implementation
US4631426A (en) * 1984-06-27 1986-12-23 Honeywell Inc. Digital circuit using MESFETS
US4680484A (en) * 1984-10-19 1987-07-14 Trw Inc. Wired-AND FET logic gate
US4713559A (en) * 1985-04-29 1987-12-15 Honeywell Inc. Multiple input and multiple output or/and circuit

Also Published As

Publication number Publication date
DK279388D0 (da) 1988-05-20
JPH02500790A (ja) 1990-03-15
ZA876544B (en) 1988-03-02
US4798979A (en) 1989-01-17
CA1262565A (en) 1989-10-31
IL83642A0 (en) 1988-01-31
WO1988002580A1 (en) 1988-04-07
DK279388A (da) 1988-05-20
AU7853887A (en) 1988-04-21
EP0324742A1 (en) 1989-07-26

Similar Documents

Publication Publication Date Title
DE69215574D1 (de) Integrierte Halbleiterschaltung mit geräuscharmen Ausgangspuffern
DE3484313D1 (de) Integrierte halbleiterschaltung.
DE3782367D1 (de) Mos-halbleiterschaltung.
FR2533750B1 (fr) Dispositif electronique, notamment dispositif a circuits integres a semiconducteurs
KR880702008A (ko) E 모드 fet 및 d 모드 fet vlsi 회로용 쇼트키 다이오드 논리 회로
DE68923017D1 (de) Bipolar- und CMOS-Transistoren verwendende integrierte Halbleiterschaltung.
KR900008927A (ko) 반도체 집적회로
KR890015413A (ko) 반도체 집적회로
FR2550012B1 (fr) Dispositif a circuits integres a semi-conducteurs
DE3782775D1 (de) Integrierte halbleiterschaltung.
HK96093A (en) Marching interconnecting lines in semiconductor integrated circuits
DE3485592D1 (de) Integrierte halbleiterschaltungsanordnung.
DE3486077D1 (de) Integrierte halbleiterschaltungsanordnung.
GB2146863B (en) Bipolar transistor logic circuits
DE3889584D1 (de) Ausgangspuffer für MOS-integrierte Halbleiterschaltung.
DE3853615D1 (de) Integrierte Halbleiterschaltung mit mehreren Taktschaltkreisen.
FR2538193B1 (fr) Interface de sortie pour circuit logique a trois etats dans un circuit integre a transistors mos
JPS641328A (en) Electronic logic circuit
DE68929104D1 (de) Integrierte Halbleiterschaltung
DE68924876D1 (de) Integrierte Halbleiterschaltungen.
DE69033265D1 (de) Integrierte Halbleiterschaltung mit P- und N-Kanal-MOS-Transistoren
FR2573591B1 (fr) Circuit logique a semi-conducteurs a transistors fet a couplage direct
DE3856019D1 (de) Integrierte Halbleiterschaltungen Vorrichtung von Scheibengrösse
DE3581842D1 (de) Integrierte halbleiterschaltung mit komplementaeren feldeffekttransistoren.
DE69124341D1 (de) Integrierte Halbleiteranordnung mit ECL-Gatterschaltungen

Legal Events

Date Code Title Description
E701 Decision to grant or registration of patent right
NORF Unpaid initial registration fee