KR880009420A - 반도체 재료 제조용 조성물과 이의 제조방법 및 사용방법 - Google Patents

반도체 재료 제조용 조성물과 이의 제조방법 및 사용방법 Download PDF

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Publication number
KR880009420A
KR880009420A KR1019880000606A KR880000606A KR880009420A KR 880009420 A KR880009420 A KR 880009420A KR 1019880000606 A KR1019880000606 A KR 1019880000606A KR 880000606 A KR880000606 A KR 880000606A KR 880009420 A KR880009420 A KR 880009420A
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KR
South Korea
Prior art keywords
cleaning solution
weight
cleaning
hydrogen peroxide
concentration
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KR1019880000606A
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English (en)
Inventor
죤 래팜 데이비드
히취마우스 죠프레이
Original Assignee
피터 머도취 버리지, 윌리엄 죤 스몰
마이크로-이미지 테크놀로지 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 피터 머도취 버리지, 윌리엄 죤 스몰, 마이크로-이미지 테크놀로지 리미티드 filed Critical 피터 머도취 버리지, 윌리엄 죤 스몰
Publication of KR880009420A publication Critical patent/KR880009420A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)

Abstract

내용 없음.

Description

반도체 재료 제조용 조성물과 이의 제조방법 및 사용방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명에 의하여 제조된 클리닝 용액에 함유된 황산 농도, 과산화수소 농도와 과일 황산 농도의 변화를 나타낸 효과를 예시한 그래프.
제 2 도는 과산화수소의 분해 %를 측정하기 위하여 용액을 분석한 결과에 대 한 그래프.

Claims (17)

  1. 물, 30-70중량% 농도의 황산과 1-20중량%의 과산화수소로 구성됨을 특징으로 하는 저장성 반도체 클리닝 용액.
  2. 제 1 항에 있어서, 황산의 농도가 65중량% 이하임을 특징으로 하는 클리닝 용액.
  3. 제 1 항 또는 제 2 항에 있어서, 과산화수소의 농도가 17중량% 임을 특징으로 하는 클리닝 용액.
  4. 전술한 항에 있어서, 금속 이온 봉쇄제를 함유함을 특징으로 하는 클리닝 용액.
  5. 제 4 항에 있어서, 최소한 0.1%의 금속 이온 봉쇄제를 함유함을 특징으로 하는 클리닝 용액.
  6. 제 4 항 또는 제 5 항에 있어서, 금속 이온 봉쇄제가 5가인 화합물임을 특징으로 하는 클리닝 용액.
  7. 전술한 항에 있어서, 주석 이온을 함유함을 특징으로 하는 클리닝 용액.
  8. 제 7 항에 있어서, Sn으로 나타내는 최소한 0.02 중량 ppm의 용해성 주석 화합물을 함유함을 특징으로 하는 클리닝 용액.
  9. 전술한 항에 있어서, Sn으로 표시되는 0.2ppm 이하의 용해성 주석을 함유함을 특징으로 하는 클리닝 용액.
  10. 전술한 항에 있어서 0.5중량% 이하의 금속 이온 봉쇄제를 함유함을 특징으로 하는 클리닝 용액.
  11. 물을 가하여 황산을 묽게하고 온도가 30℃ 이하로 떨어질때 까지 묽은 산을 숙성시키고 숙성된 황산에 과산화수소를 주입하고, 이의 온도를 30℃ 이하로 유지하고, 생성된 용액을 평형을 이루게 함을 특징으로 하는 전술한 클리닝 용액의 제조방법.
  12. 제11항에 있어서, 묽은 산에 첨가된 과산화수소의 농도가 최소한 30 중량%임을 특징으로 하는 클리닝 용액의 제조방법.
  13. 제11항에 있어서, 묽은 산에 첨가된 과산화수소의 농도가 최소한 65 중량%임을 특징으로 하는 클리닝 용액의 제조방법.
  14. 제11항에 있어서, 묽은 산이 80 중량% 이하의 농도를 가짐을 특징으로 하는 클리닝 용액의 제조방법.
  15. 제 1 항 내지 제10항 중 어느 하나에 청구된 클리닝 용액과 반도체를 접촉시킴을 특징으로 하는 반도체의 클리닝 방법.
  16. 제11항 내지 제14항 중 어느 하나에 청구된 제조방법에 의하여 제조된 클리닝 용액과 반도체를 접촉시킴을 특징으로 하는 반도체의 클리닝 방법.
  17. 제15항 또는 제16항에 있어서, 클리닝 용액이 상온에서 100℃ 이하의 온도를 가짐을 특징으로 하는 클리닝 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880000606A 1987-01-27 1988-01-26 반도체 재료 제조용 조성물과 이의 제조방법 및 사용방법 KR880009420A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB878701759A GB8701759D0 (en) 1987-01-27 1987-01-27 Processing of semi-conductor materials
GB8701759 1987-01-27

Publications (1)

Publication Number Publication Date
KR880009420A true KR880009420A (ko) 1988-09-15

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KR1019880000606A KR880009420A (ko) 1987-01-27 1988-01-26 반도체 재료 제조용 조성물과 이의 제조방법 및 사용방법

Country Status (5)

Country Link
US (1) US4885106A (ko)
EP (1) EP0276774A3 (ko)
JP (1) JPS63211724A (ko)
KR (1) KR880009420A (ko)
GB (1) GB8701759D0 (ko)

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JP2007049022A (ja) * 2005-08-11 2007-02-22 Dainippon Screen Mfg Co Ltd 基板処理方法及びその装置
US20070068901A1 (en) * 2005-09-29 2007-03-29 Wang Yuchun Composition and method for enhancing pot life of hydrogen peroxide-containing CMP slurries
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Also Published As

Publication number Publication date
US4885106A (en) 1989-12-05
EP0276774A2 (en) 1988-08-03
JPS63211724A (ja) 1988-09-02
EP0276774A3 (en) 1988-09-21
GB8701759D0 (en) 1987-03-04

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