KR880006789A - High Reliability Semiconductor Device and Manufacturing Method Thereof - Google Patents
High Reliability Semiconductor Device and Manufacturing Method Thereof Download PDFInfo
- Publication number
- KR880006789A KR880006789A KR870012658A KR870012658A KR880006789A KR 880006789 A KR880006789 A KR 880006789A KR 870012658 A KR870012658 A KR 870012658A KR 870012658 A KR870012658 A KR 870012658A KR 880006789 A KR880006789 A KR 880006789A
- Authority
- KR
- South Korea
- Prior art keywords
- gate electrode
- region
- semiconductor device
- gate
- concentration region
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims 22
- 239000000758 substrate Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 5
- 239000012535 impurity Substances 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제1도는 게이트/드레인의 오버랩량과 가로방향 전계 강도와의 관계를 도시하는 도면.1 is a diagram showing the relationship between the overlap amount of the gate / drain and the lateral electric field strength.
제2도는 게이트/드레인의 오버랩량과 최대 전계 강도의 발생점의 위치와의 관계를 도시하는 도면.2 is a diagram showing the relationship between the overlap amount of the gate / drain and the position of the generation point of the maximum field strength.
제3도는 본 발명의 제1의 실시예의 MOS 트랜지스터의 단면도.3 is a cross-sectional view of the MOS transistor of the first embodiment of the present invention.
제4도는(a)~(c)는 본 발명의 제2의 실시예의 제조 공정을 도시하는 단면도(A)-(c) is sectional drawing which shows the manufacturing process of 2nd Example of this invention.
제5도는 본 발명의 제3의 실시예를 도시하는 단면도.5 is a sectional view showing a third embodiment of the present invention.
제6도는 본 발명의 제4의 실시예를 도시하는 단면도.6 is a sectional view showing a fourth embodiment of the present invention.
제8도는 본 발명의 제6의 실시예를 도시하는 단면도.8 is a sectional view showing a sixth embodiment of the present invention.
제9도는 본 발명의 제7의 실시예를 도시하는 단면도.9 is a sectional view showing a seventh embodiment of the present invention.
제10도는 본 발명의 제8의 실시예를 도시하는 단면도.10 is a sectional view showing an eighth embodiment of the present invention.
제11도 (a), (b)는 본 발명의 제9의 실시예를 도시하는 단면도.11 (a) and 11 (b) are cross-sectional views showing the ninth embodiment of the present invention.
제12도는 본 발명의 제10의 실시예를 도시하는 단면도.12 is a sectional view showing a tenth embodiment of the present invention.
제13도 (a), (b)는 본 발명의 제11의 실시예의 제조 공정을 도시하는 단면도.13 (a) and 13 (b) are sectional views showing the manufacturing process of the eleventh embodiment of the present invention.
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61266543A JPS63122174A (en) | 1986-11-11 | 1986-11-11 | Semiconductor device and its manufacture |
JP61-266543 | 1986-11-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR880006789A true KR880006789A (en) | 1988-07-25 |
KR900008153B1 KR900008153B1 (en) | 1990-11-03 |
Family
ID=17432318
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870012658A KR900008153B1 (en) | 1986-11-11 | 1987-11-10 | Semiconductor device and its manufacturing method |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS63122174A (en) |
KR (1) | KR900008153B1 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0212835A (en) * | 1988-06-30 | 1990-01-17 | Toshiba Corp | Semiconductor device and manufacture thereof |
US5141891A (en) * | 1988-11-09 | 1992-08-25 | Mitsubishi Denki Kabushiki Kaisha | MIS-type semiconductor device of LDD structure and manufacturing method thereof |
JPH0334550A (en) * | 1989-06-30 | 1991-02-14 | Nec Corp | Mos transistor |
JP2995838B2 (en) * | 1990-01-11 | 1999-12-27 | セイコーエプソン株式会社 | Mis type semiconductor device and manufacture thereof |
US5798550A (en) * | 1990-10-01 | 1998-08-25 | Nippondenso Co. Ltd. | Vertical type semiconductor device and gate structure |
US5426327A (en) * | 1990-10-05 | 1995-06-20 | Nippon Steel Corporation | MOS semiconductor with LDD structure having gate electrode and side spacers of polysilicon with different impurity concentrations |
JPH0629524A (en) * | 1992-04-14 | 1994-02-04 | Toshiba Corp | Manufacture of semiconductor device |
US5654212A (en) * | 1995-06-30 | 1997-08-05 | Winbond Electronics Corp. | Method for making a variable length LDD spacer structure |
KR100995330B1 (en) * | 2003-04-29 | 2010-11-19 | 매그나칩 반도체 유한회사 | Semiconductor device fabricating method |
JP2007311498A (en) * | 2006-05-17 | 2007-11-29 | Denso Corp | Semiconductor device |
JP5332781B2 (en) * | 2009-03-19 | 2013-11-06 | 富士通セミコンダクター株式会社 | Manufacturing method of semiconductor device |
-
1986
- 1986-11-11 JP JP61266543A patent/JPS63122174A/en active Pending
-
1987
- 1987-11-10 KR KR1019870012658A patent/KR900008153B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPS63122174A (en) | 1988-05-26 |
KR900008153B1 (en) | 1990-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR890003038A (en) | Semiconductor manufacturing process with pedestal structure | |
KR930005257A (en) | Thin film field effect element and its manufacturing method | |
KR950034767A (en) | MIS semiconductor device | |
KR890013796A (en) | Semiconductor device and manufacturing method | |
KR930006972A (en) | Method of manufacturing field effect transistor | |
KR890011103A (en) | Manufacturing method of semiconductor integrated circuit device | |
KR910001886A (en) | Semiconductor device and manufacturing method | |
KR930001484A (en) | Method for manufacturing a DMOS transistor | |
KR930005259A (en) | Semiconductor device and manufacturing method thereof | |
KR880006789A (en) | High Reliability Semiconductor Device and Manufacturing Method Thereof | |
KR920017279A (en) | MOS semiconductor device and manufacturing method thereof | |
KR950021800A (en) | 3-terminal power insulated gate transistor and manufacturing method thereof | |
KR960043167A (en) | Semiconductor integrated circuit device and manufacturing method thereof | |
KR920022562A (en) | Semiconductor Integrated Circuit Manufacturing Method | |
KR970004079A (en) | Semiconductor device and manufacturing method | |
KR960026934A (en) | Bipolar transistor, semiconductor device comprising bipolar transistor and method of manufacturing same | |
KR900015316A (en) | Semiconductor device | |
KR900015346A (en) | Silicate Doped Emitter Bridge Transistors | |
KR930003430A (en) | Semiconductor device and manufacturing method thereof | |
JPH08250586A (en) | Semiconductor device and manufacture thereof | |
KR930003296A (en) | Drain leakage current prevention MISFET and its manufacturing method | |
KR0157872B1 (en) | Mosfet and their manufacturing method | |
KR910007104A (en) | How to Form Self-Aligned Contact | |
KR980006472A (en) | Bipolar transistor and method for manufacturing the same | |
JPH0350743A (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20011024 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |