KR880006533A - 반도체 압력센서의 브리지회로 조정방법 - Google Patents

반도체 압력센서의 브리지회로 조정방법 Download PDF

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Publication number
KR880006533A
KR880006533A KR1019870012430A KR870012430A KR880006533A KR 880006533 A KR880006533 A KR 880006533A KR 1019870012430 A KR1019870012430 A KR 1019870012430A KR 870012430 A KR870012430 A KR 870012430A KR 880006533 A KR880006533 A KR 880006533A
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KR
South Korea
Prior art keywords
adjusting
bridge circuit
wiring
pressure sensor
diaphragm
Prior art date
Application number
KR1019870012430A
Other languages
English (en)
Other versions
KR910001842B1 (ko
Inventor
마사노리 니시구찌
Original Assignee
나까하라 쯔네오
스미도모덴기고오교오 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP61264747A external-priority patent/JPS63118628A/ja
Priority claimed from JP61264748A external-priority patent/JPS63118629A/ja
Application filed by 나까하라 쯔네오, 스미도모덴기고오교오 가부시기가이샤 filed Critical 나까하라 쯔네오
Publication of KR880006533A publication Critical patent/KR880006533A/ko
Application granted granted Critical
Publication of KR910001842B1 publication Critical patent/KR910001842B1/ko

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L27/00—Testing or calibrating of apparatus for measuring fluid pressure
    • G01L27/002—Calibrating, i.e. establishing true relation between transducer output value and value to be measured, zeroing, linearising or span error determination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

내용 없음

Description

반도체압력센서의 브리지회로 조정방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체압력센서의 브리지회로조정방법의 제1실시예를 도시한 개략평면도.
제2도는 제1도의 반도체압력센서의 횡단면도.
제3도는 반도체압력센서의 압력감도를 측정하는 실시예를 도시할 개략 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 반도체압려센서 4 : 확산저항체
7 : 다이아프램 8,8′ : AI패드
9 : 배선, 3a, 3b, 3c, 3d : 변형게이지 저항체, 5a,5b,5c,5d,5e : Al패드

Claims (3)

  1. 브리지회로를 변형게이지저항체와 이 변형게이지저항체를 접속하는 확산저항체로 구성하고, 배선프로세스에서 소정간꼭마다 상기 확산저항체의 적어도 하나에 접속된 도체로 이루어진 롤선을 인출하고, 상기확산저항체의 적어도 상기 하나의 저항치를 조정하는 수단을 형성하고, 테스트프로세스에써 다이아프램의이면을 진공흡입하여 가상적으로 상기 다이아프램의 로면쪽으로부터 않력이 인가된 상태를 만들고, 상기 브리지히로를 이용해서 다이안프램의 표면쪽으로부러 상기 딴도체압력센서의 압력감도를 측정하고, 이 측정된압력갚도에 의거해서 상기 조정수단을 사용하여 상기 확산저항체의 적어도 상기 하나의 저항치를 조정하여상기 브리지회로의 출력밸런스를 조정하는 반도체입력센서의 브리지회로 조정방법
  2. 제1항에 있어서, 저항치를 조정하는 상기 수단은 상기 배선과 각 배선의 단부에 공통해서 접속된 도체로 이루어진 패드로 구성하고, 상기 확산저항체의 저항치는 상기 압력감도에 의거해서 상기 배선을 선택적으로 출력함에 의해 조정되는 것을 특징으로 하는 반도체압력센서의 브리지회로 조정방법.
  3. 제1항에 있어서, 저항치를 조정하는 상기 수단은 상기 배선과 각 배선의 단부에 접속된 도체로 이루어진 패드로 구성하고, 상기 확산저항체의 저항치는 상기 압력감도에 의거해서 상기 패드의 하나를 선택하고 결합함에 의해 조정되는 것을 특징으로하는 반도체압력센서의 브리지회로 조정방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870012430A 1986-11-06 1987-11-05 반도체압력센서의 브리지회로 조정방법 KR910001842B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP61264747A JPS63118628A (ja) 1986-11-06 1986-11-06 半導体圧力センサのブリツジ回路調整方法
JP61-264747 1986-11-06
JP61-264748 1986-11-06
JP61264748A JPS63118629A (ja) 1986-11-06 1986-11-06 半導体圧力センサのブリツジ回路調整方法

Publications (2)

Publication Number Publication Date
KR880006533A true KR880006533A (ko) 1988-07-23
KR910001842B1 KR910001842B1 (ko) 1991-03-28

Family

ID=26546652

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870012430A KR910001842B1 (ko) 1986-11-06 1987-11-05 반도체압력센서의 브리지회로 조정방법

Country Status (5)

Country Link
US (1) US4809536A (ko)
EP (1) EP0266681B1 (ko)
KR (1) KR910001842B1 (ko)
AU (1) AU591817B2 (ko)
DE (1) DE3784009T2 (ko)

Cited By (1)

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KR101355838B1 (ko) * 2006-01-06 2014-01-27 허니웰 인터내셔널 인코포레이티드 실리콘 프릿으로 접착된 캡을 구비한 압력 센서

Families Citing this family (15)

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EP0265816B1 (en) * 1986-10-28 1991-08-28 Sumitomo Electric Industries Limited Method of measuring semiconductor pressure sensor
JP3039934B2 (ja) * 1989-06-13 2000-05-08 コーリン電子株式会社 圧脈波検出装置
US5058435A (en) * 1989-06-22 1991-10-22 Ic Sensors, Inc. Single diaphragm transducer with multiple sensing elements
US5184515A (en) * 1989-06-22 1993-02-09 Ic Sensors, Inc. Single diaphragm transducer with multiple sensing elements
US5131259A (en) * 1991-02-01 1992-07-21 Fel-Pro Incorporated Calibration fixture and method of calibrating contact sensors
DE4206174C2 (de) * 1992-02-28 1995-06-22 Bosch Gmbh Robert Integrierter Sensor aus Silizium
JP3281217B2 (ja) * 1995-05-23 2002-05-13 富士電機株式会社 半導体式加速度センサと該センサのセンサ素子の特性評価方法
US7455666B2 (en) 2001-07-13 2008-11-25 Board Of Regents, The University Of Texas System Methods and apparatuses for navigating the subarachnoid space
DE10310392A1 (de) * 2003-03-07 2004-09-16 Hottinger Baldwin Messtechnik Gmbh Aufnehmer zur Ermittlung einer Dehnung
US20040252290A1 (en) * 2003-06-10 2004-12-16 Ferguson Gary W. Optical strain gauge and methods of use including a wind measurement device
US6993954B1 (en) * 2004-07-27 2006-02-07 Tekscan, Incorporated Sensor equilibration and calibration system and method
DE102006062222A1 (de) * 2006-12-22 2008-06-26 Endress + Hauser Gmbh + Co. Kg Differenzdrucksensor mit Kompensation des statischen Drucks
WO2011044387A2 (en) 2009-10-07 2011-04-14 The Board Of Regents Of The University Of Texas System Pressure-sensing medical devices, systems and methods, and methods of forming medical devices
JP6540397B2 (ja) * 2015-09-07 2019-07-10 オムロンヘルスケア株式会社 圧脈波センサの検査方法及び圧脈波センサの製造方法
CN206330645U (zh) * 2016-09-05 2017-07-14 泰科电子(上海)有限公司 传感器组件和液位检测装置

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US3697918A (en) * 1971-08-03 1972-10-10 Gen Electric Silicon diaphragm pressure sensor having improved configuration of integral strain gage elements
US3899766A (en) * 1974-03-29 1975-08-12 Tyco Laboratories Inc Pressure transducer
JPS5453877A (en) * 1977-10-07 1979-04-27 Hitachi Ltd Temperature compensation circuit of semiconductor strain gauge
US4174639A (en) * 1978-04-06 1979-11-20 American Chain & Cable Company, Inc. Bridge circuits
US4411158A (en) * 1981-04-14 1983-10-25 Ametek, Inc. Apparatus for sensing the condition of a fluid
US4611129A (en) * 1983-04-22 1986-09-09 Nec Corporation Signal conversion circuit
US4565097A (en) * 1984-05-09 1986-01-21 Mark Telephone Products, Inc. Method and apparatus for transducer error cancellation
US4672853A (en) * 1984-10-30 1987-06-16 Burr-Brown Corporation Apparatus and method for a pressure-sensitive device
EP0265816B1 (en) * 1986-10-28 1991-08-28 Sumitomo Electric Industries Limited Method of measuring semiconductor pressure sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101355838B1 (ko) * 2006-01-06 2014-01-27 허니웰 인터내셔널 인코포레이티드 실리콘 프릿으로 접착된 캡을 구비한 압력 센서

Also Published As

Publication number Publication date
EP0266681A2 (en) 1988-05-11
US4809536A (en) 1989-03-07
EP0266681A3 (en) 1990-08-01
DE3784009D1 (de) 1993-03-18
AU8089187A (en) 1988-05-12
DE3784009T2 (de) 1993-05-19
KR910001842B1 (ko) 1991-03-28
EP0266681B1 (en) 1993-02-03
AU591817B2 (en) 1989-12-14

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