KR880002239A - 플래나(planar)형 마그네트론 스퍼터(magnetron sputter) 장치와 그 자석원 - Google Patents

플래나(planar)형 마그네트론 스퍼터(magnetron sputter) 장치와 그 자석원 Download PDF

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Publication number
KR880002239A
KR880002239A KR1019860006018A KR860006018A KR880002239A KR 880002239 A KR880002239 A KR 880002239A KR 1019860006018 A KR1019860006018 A KR 1019860006018A KR 860006018 A KR860006018 A KR 860006018A KR 880002239 A KR880002239 A KR 880002239A
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South Korea
Prior art keywords
target
magnet
magnetron sputter
planar magnetron
permanent magnets
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KR1019860006018A
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KR900001661B1 (ko
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마사후미 스즈끼
히데노부 시라이
Original Assignee
야마모도 다꾸마
후지 쓰 가부시끼가이샤
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    • H01L21/203—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음

Description

플래나(planar)형 마그네트론 스퍼터(magnetron sputter)장치와 그 자석원
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 동축 자석이 사용된 종래 자석원의 횡단면도.
제2도는 상자형 외부자석과 막대형 내부자석이 사용된 종래의 직사각형 자석원의 사시도.
제3도는 자석원 편심으로 회전하는 플래나형 마그네트론 스퍼터링 장치의 횡단면도.

Claims (7)

  1. 전자계(電磁界)에 의하여 형성된 플라즈마를 사용하고, 불활성 가스를 받아들이기 위한 수단과 놓여질 기판을 유지하기 위한 수단을 가지는 배기가능실, 타게트의 표면이 상기 기판과 평행하게 대면하고 상기 실내에 있는 플래나형 타게트, 상기 타게트의 표면에 수직으로 전계를 인가하기 위한 수단, 자석원이 상기 타게트의 중심축 주위에서 편심으로 회전하고, 회전판이 상기 타게트와 평행하게 유지되고, 상기 자석원이 기초부상에 배열된 다수의 영구자석으로 구성되며 상기 타게트뒤에 위치하여 상기 타게트의 표면상에 자계를 발생하기 위한 자석원수단, 상기 타게트의 표면상에 형성된 상기 플라즈마 영역이 폐곡선을 형성하고 상기 자석원의 회전방향에 따라 측정된 상기 플라즈마 영역의 길이가 회전 반경에 비례하도록 배열된 상기 영구자석을 포함하는 것을 특징으로 하는 플래나형 마그네트론 스퍼터링 장치.
  2. 제1항에 있어서, 상기 영구자석이 대칭 패턴으로 배열되는 플래나형 마그네트론 스퍼터 장치.
  3. 제2항에 있어서, 영구자석의 상기 배열이 회전 중심을 지나는 선에 관하여 대칭이고 상기 폐곡선의 최외측과 최내측점이 상기 신상에 위치하는 플래나형 마그네트론 스퍼터 장치.
  4. 제3항에 있어서, 상기 플라즈마 영역이 하트형 패턴을 가지는 상기 폐곡선을 형성하는 플래나형 마그네트론 스퍼터 장치.
  5. 제1항에 있어서, 각각의 상기 영구자석이 2개의 조각의 사각 막대자석으로 구성되고, 각각의 막대 자석은 축방향에서 자석화되며 각각 횡단면 방향이 서로 교차하도록 이음쇠상에 배열되는 플래나형 마그네트론 스퍼터 장치.
  6. 제1항에 있어서, 각각의 상기 영구자석이 기초부와 평형하게 축으로 분극화 되는 하나의 자석과 그것의 지지부로 구성되는 플래나형 마그네트론 스퍼터 장치.
  7. 제1항에 있어서, 상기 자석원이 냉각 쟈켓내에 싸여지고, 반대측상에 상기 타게트를 유지하는 백킹판에 고정되며 물로 냉각되는 플래나 마그네트론 스퍼터 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860006018A 1985-08-02 1986-07-24 플래나(planar)형 마그네트론 스퍼터(magnetron sputter)장치와 그 자석원 KR900001661B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60-171327 1985-08-02
JP60171327A JPS6260866A (ja) 1985-08-02 1985-08-02 マグネトロンスパツタ装置
JP171327 1985-08-02

Publications (2)

Publication Number Publication Date
KR880002239A true KR880002239A (ko) 1988-04-29
KR900001661B1 KR900001661B1 (ko) 1990-03-17

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Application Number Title Priority Date Filing Date
KR1019860006018A KR900001661B1 (ko) 1985-08-02 1986-07-24 플래나(planar)형 마그네트론 스퍼터(magnetron sputter)장치와 그 자석원

Country Status (5)

Country Link
US (1) US4872964A (ko)
EP (1) EP0211412B1 (ko)
JP (1) JPS6260866A (ko)
KR (1) KR900001661B1 (ko)
DE (1) DE3689553D1 (ko)

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KR20210107104A (ko) * 2019-01-23 2021-08-31 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. 라이닝 냉각 어셈블리, 반응 챔버 및 반도체 가공 디바이스

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* Cited by examiner, † Cited by third party
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Also Published As

Publication number Publication date
US4872964A (en) 1989-10-10
KR900001661B1 (ko) 1990-03-17
JPH036990B2 (ko) 1991-01-31
EP0211412A3 (en) 1988-09-14
EP0211412A2 (en) 1987-02-25
EP0211412B1 (en) 1994-01-19
DE3689553D1 (de) 1994-03-03
JPS6260866A (ja) 1987-03-17

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