KR880000483B1 - 반도체소자의 제조방법 - Google Patents

반도체소자의 제조방법 Download PDF

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Publication number
KR880000483B1
KR880000483B1 KR1019850005633A KR850005633A KR880000483B1 KR 880000483 B1 KR880000483 B1 KR 880000483B1 KR 1019850005633 A KR1019850005633 A KR 1019850005633A KR 850005633 A KR850005633 A KR 850005633A KR 880000483 B1 KR880000483 B1 KR 880000483B1
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KR
South Korea
Prior art keywords
layer
oxide film
polycrystalline silicon
thickness
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019850005633A
Other languages
English (en)
Korean (ko)
Other versions
KR870002663A (ko
Inventor
채상훈
이진효
Original Assignee
재단법인 한국전자통신 연구소
경상현
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 재단법인 한국전자통신 연구소, 경상현 filed Critical 재단법인 한국전자통신 연구소
Priority to KR1019850005633A priority Critical patent/KR880000483B1/ko
Priority to JP61147979A priority patent/JPS6273667A/ja
Priority to US06/889,491 priority patent/US4686762A/en
Publication of KR870002663A publication Critical patent/KR870002663A/ko
Application granted granted Critical
Publication of KR880000483B1 publication Critical patent/KR880000483B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/124—Polycrystalline emitter

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
KR1019850005633A 1985-08-05 1985-08-05 반도체소자의 제조방법 Expired KR880000483B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019850005633A KR880000483B1 (ko) 1985-08-05 1985-08-05 반도체소자의 제조방법
JP61147979A JPS6273667A (ja) 1985-08-05 1986-06-24 半導体素子の製造方法
US06/889,491 US4686762A (en) 1985-08-05 1986-07-23 Fabricating semiconductor device with polysilicon protection layer during processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019850005633A KR880000483B1 (ko) 1985-08-05 1985-08-05 반도체소자의 제조방법

Publications (2)

Publication Number Publication Date
KR870002663A KR870002663A (ko) 1987-04-06
KR880000483B1 true KR880000483B1 (ko) 1988-04-07

Family

ID=19242148

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850005633A Expired KR880000483B1 (ko) 1985-08-05 1985-08-05 반도체소자의 제조방법

Country Status (3)

Country Link
US (1) US4686762A (enExample)
JP (1) JPS6273667A (enExample)
KR (1) KR880000483B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4812417A (en) * 1986-07-30 1989-03-14 Mitsubishi Denki Kabushiki Kaisha Method of making self aligned external and active base regions in I.C. processing
US5114867A (en) * 1987-07-15 1992-05-19 Rockwell International Corporation Sub-micron bipolar devices with method for forming sub-micron contacts
KR890003827B1 (ko) * 1987-07-25 1989-10-05 재단법인 한국전자통신연구소 고속 고집적 반도체소자(Bicmos)의 제조방법
JP3469251B2 (ja) * 1990-02-14 2003-11-25 株式会社東芝 半導体装置の製造方法
US5039625A (en) * 1990-04-27 1991-08-13 Mcnc Maximum areal density recessed oxide isolation (MADROX) process
KR920007124A (ko) * 1990-09-04 1992-04-28 김광호 폴리 에미터 바이폴라 트랜지스터의 제조방법
KR100327329B1 (ko) * 1998-12-11 2002-07-04 윤종용 저압하의실리콘산화막및산질화막형성방법

Also Published As

Publication number Publication date
KR870002663A (ko) 1987-04-06
US4686762A (en) 1987-08-18
JPS6273667A (ja) 1987-04-04
JPH0482180B2 (enExample) 1992-12-25

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