KR870007558A - Plasma treatment endpoint determination method and apparatus - Google Patents
Plasma treatment endpoint determination method and apparatus Download PDFInfo
- Publication number
- KR870007558A KR870007558A KR870000045A KR870000045A KR870007558A KR 870007558 A KR870007558 A KR 870007558A KR 870000045 A KR870000045 A KR 870000045A KR 870000045 A KR870000045 A KR 870000045A KR 870007558 A KR870007558 A KR 870007558A
- Authority
- KR
- South Korea
- Prior art keywords
- light
- plasma
- amount
- end point
- delay time
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 12
- 238000009832 plasma treatment Methods 0.000 title claims 7
- 230000035484 reaction time Effects 0.000 claims description 5
- 230000002123 temporal effect Effects 0.000 claims 3
- 238000001020 plasma etching Methods 0.000 claims 2
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
내용 없음No content
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제 1 도는 본 발명에 의한 플라즈마 처리 종점판정 장치의 일실시예를 나타낸 블럭도.1 is a block diagram showing an embodiment of a plasma processing endpoint determination apparatus according to the present invention.
제 2 도는 본 발명에 의한 플라즈마 처리 종점 판정방법을 설명하는 플라즈마 광량과 반응 시간과의 관계선도.2 is a relationship diagram between the amount of plasma light and the reaction time for explaining the plasma processing end point determination method according to the present invention.
제 3 도는 마찬가지로 플라즈마 광량에 대한 방응 시간함수의 1차 미분치와 반응 시간과의 관계선도.3 is similarly a relation diagram of the first derivative of the response time function with respect to the amount of plasma light and the reaction time.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 분광기 20 : 티이머 30 : 컴퓨터10 spectroscope 20 timer 30 computer
40 : 처리실 41 : 대향전극 42 : 시료전극40: process chamber 41: counter electrode 42: sample electrode
43 : 방전공간 44,45 : 전극축 64,47 : 노즐43: discharge space 44, 45: electrode shaft 64, 47: nozzle
48 : 투시창 50 : 고주파 전원 60 : 광전 변환기48: sight window 50: high frequency power supply 60: photoelectric converter
70 : A/D 변환기 80 : 증폭기 90 : 디지틀 필터70: A / D converter 80: amplifier 90: digital filter
100 : 수정 발진기 110 : 시이퀀서 120 : 시료100: crystal oscillator 110: sequencer 120: sample
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61000627A JPH0770516B2 (en) | 1986-01-08 | 1986-01-08 | Etching end point determination method |
JP86-627 | 1986-01-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR870007558A true KR870007558A (en) | 1987-08-20 |
KR920000675B1 KR920000675B1 (en) | 1992-01-20 |
Family
ID=11478963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019870000045A KR920000675B1 (en) | 1986-01-08 | 1987-01-07 | Flasma treatment ending point decision method ant its device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH0770516B2 (en) |
KR (1) | KR920000675B1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2564312B2 (en) * | 1987-07-17 | 1996-12-18 | 株式会社日立製作所 | Etching end point determination method and apparatus |
JPH08232087A (en) | 1994-12-08 | 1996-09-10 | Sumitomo Metal Ind Ltd | Method for detecting end point of etching and etching device |
US6149761A (en) * | 1994-12-08 | 2000-11-21 | Sumitomo Metal Industries Limited | Etching apparatus and etching system using the method thereof |
JP2001007084A (en) | 1999-06-21 | 2001-01-12 | Nec Corp | Method for determining termination of etching |
-
1986
- 1986-01-08 JP JP61000627A patent/JPH0770516B2/en not_active Expired - Lifetime
-
1987
- 1987-01-07 KR KR1019870000045A patent/KR920000675B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR920000675B1 (en) | 1992-01-20 |
JPH0770516B2 (en) | 1995-07-31 |
JPS62159431A (en) | 1987-07-15 |
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FPAY | Annual fee payment |
Payment date: 19971229 Year of fee payment: 9 |
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