KR870007558A - Plasma treatment endpoint determination method and apparatus - Google Patents

Plasma treatment endpoint determination method and apparatus Download PDF

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Publication number
KR870007558A
KR870007558A KR870000045A KR870000045A KR870007558A KR 870007558 A KR870007558 A KR 870007558A KR 870000045 A KR870000045 A KR 870000045A KR 870000045 A KR870000045 A KR 870000045A KR 870007558 A KR870007558 A KR 870007558A
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South Korea
Prior art keywords
light
plasma
amount
end point
delay time
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KR870000045A
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Korean (ko)
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KR920000675B1 (en
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쇼오지 이꾸하라
게이지 다다
요시나오 가와사끼
가쓰요시 구도오
미누루 소라오까
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미다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR870007558A publication Critical patent/KR870007558A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Abstract

내용 없음No content

Description

플라즈마 처리종점 판정방법 및 장치Plasma treatment endpoint determination method and apparatus

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1 도는 본 발명에 의한 플라즈마 처리 종점판정 장치의 일실시예를 나타낸 블럭도.1 is a block diagram showing an embodiment of a plasma processing endpoint determination apparatus according to the present invention.

제 2 도는 본 발명에 의한 플라즈마 처리 종점 판정방법을 설명하는 플라즈마 광량과 반응 시간과의 관계선도.2 is a relationship diagram between the amount of plasma light and the reaction time for explaining the plasma processing end point determination method according to the present invention.

제 3 도는 마찬가지로 플라즈마 광량에 대한 방응 시간함수의 1차 미분치와 반응 시간과의 관계선도.3 is similarly a relation diagram of the first derivative of the response time function with respect to the amount of plasma light and the reaction time.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 분광기 20 : 티이머 30 : 컴퓨터10 spectroscope 20 timer 30 computer

40 : 처리실 41 : 대향전극 42 : 시료전극40: process chamber 41: counter electrode 42: sample electrode

43 : 방전공간 44,45 : 전극축 64,47 : 노즐43: discharge space 44, 45: electrode shaft 64, 47: nozzle

48 : 투시창 50 : 고주파 전원 60 : 광전 변환기48: sight window 50: high frequency power supply 60: photoelectric converter

70 : A/D 변환기 80 : 증폭기 90 : 디지틀 필터70: A / D converter 80: amplifier 90: digital filter

100 : 수정 발진기 110 : 시이퀀서 120 : 시료100: crystal oscillator 110: sequencer 120: sample

Claims (7)

시료의 플라즈마 처리반응시에 발생하는 플라즈마 광중에서 특정파장의 플라즈마 광을 선택하는 스텝과, 종점판정 지연타임을 설정하는 스텝과, 상기 종점판정지연타임이 경과한 시점에서 그 시점에서의 상기 선택된 플라즈마 광의 광량 및 광량의 시간적 변화량을 기초로하여 상기 시점이전의 플라즈마 광량을 가정하는 스텝과, 이가정된 플라즈마 광량과 그이후의 플라즈마 광의 실광량에 의해 상기 시료의 플라즈마 처마반응의 종점을 판정하는 스텝을 가진 플라즈마 처리종점 판정방법.Selecting the plasma light having a specific wavelength from among the plasma light generated during the plasma treatment reaction of the sample, setting the end point delay time, and selecting the selected plasma at the time when the end point determination delay time has elapsed A step of assuming plasma amount of light before the point of time based on the amount of light and the amount of temporal change of the amount of light; Plasma treatment endpoint determination method having a. 제 1 항에 있어서, 종점판정 지연타임 이전의 플라즈마 광량을 상기 종점판정 지연타임시점의 플라즈마 광의 실광량으로 부터 그 경사를 가진 연장선상에 있었다고 가정하는 플라즈마 처리종점 판정방법.The plasma processing endpoint determination method according to claim 1, wherein the plasma light quantity before the endpoint determination delay time is assumed to be on an extension line having an inclination from the actual light quantity of the plasma light at the endpoint determination delay time. 제 2 항에 있어서, 상기 종점판정 지연타임 경과이전에서는 상기 가정된 플라즈마 광량을 사용하고, 상기 종점판정 지연타임경과 이후는 상기 플라즈마 광의 실광량에 의하여 상기 시료의 플라즈마 처리 반응의 종점 판정을 행하는 플라즈마 처리종점 판정방법.3. The plasma of claim 2, wherein the assumed amount of plasma light is used before the end time delay time is elapsed, and after the end time delay time, the end point of the plasma treatment reaction of the sample is determined based on the amount of actual light of the plasma light. Process endpoint determination method. 제 3 항에 있어서, 상기 가정된 플라즈마 광량에 대한 플라즈마 처리 방응시간 함수 및 상기 플라즈마 광의 실광량에 대한 플라즈마 처리반응 시간 함수를 1차미분 하는 스텝을 가진 플라즈마 처리종점 판정방법.4. The method of claim 3, further comprising the step of first-differentiating a plasma processing response time function with respect to the assumed amount of plasma light and a plasma processing reaction time function with respect to the actual light amount of the plasma light. 제 3 항에 있어서, 상기 가정된 플라즈마 광량에 대한 플라즈마 처리반응시간 함수 및 상기 플라즈마 광의 실광량에 대한 플라즈마 처리반응 시간 함수를 2차미분하는 스텝을 가진 플라즈마 처리종점 판정방법.4. The method of claim 3, further comprising the step of second-differentiating a plasma processing reaction time function for the assumed amount of plasma light and a plasma processing reaction time function for the actual amount of plasma light. 시료의 플라즈마 에칭처리시에 발생하는 반응 생성물에 대응한 발광중에서 특정 파장의 발광을 선택하는 스텝과, 종점 판정지연 타임을 설정하는 스텝과, 상기 종점판정지연 타임이 경과한 시점에서 그 시점에서의 상기 선택된 발광의 광량 및 그 광량의 시간적 변화량을 기초로 상기 시점이전의 발광량을 가정하는 스텝과, 이 가정된 발광량과 그 이후의 발광의 실광량에 의하여 상기시료의 플라즈마 에칭처리의 종점을 판정하는 스템을 가진 플라즈마 처리종점 판정방법.Selecting a light emission of a specific wavelength from among the light emission corresponding to the reaction product generated during the plasma etching process of the sample, setting the end point determination delay time, and when the end point determination delay time has elapsed A step of assuming a light emission amount before the viewpoint based on the light amount of the selected light emission and a temporal change amount of the light emission, and determining an end point of the plasma etching process of the sample based on the assumed light emission amount and the actual light amount of the light emission thereafter Plasma treatment endpoint determination method with stem. 시료의 플라즈마 처리 반응시에 발생하는 플라즈마 광 중에서 특정 파장의 플라즈마 광을 선택하는 수단과, 종점판정 지연 타임을 설정하는 수단과, 상기 종점판정 지연 타임이 경과한 시점에서 그 시점에서 상기 선택된 플라즈마 광의 광량 및 그 광량의 시간적 변화량을 기초로 상기 시점이전의 플라즈마 광량을 가정하는 수단과, 상기 가정된 플라즈마 광량과 그 이후의 플라즈마 광의 실광량에 의하여 상기 시료의 플라즈마 처리 반응의 종점을 판정하는 수단을 구비하는 플라즈마 처리종점 판정장치.Means for selecting a plasma light having a specific wavelength among plasma light generated during the plasma treatment reaction of the sample, means for setting an end point delay time, and when the end point delay time elapses, Means for assuming the amount of plasma light before the point of time based on the amount of light and the amount of temporal change in the amount of light, and means for determining the end point of the plasma treatment reaction of the sample based on the assumed amount of plasma light and the amount of actual light of the plasma light thereafter. Plasma processing end point determination device provided. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019870000045A 1986-01-08 1987-01-07 Flasma treatment ending point decision method ant its device KR920000675B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP86-627 1986-01-08
JP61000627A JPH0770516B2 (en) 1986-01-08 1986-01-08 Etching end point determination method

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KR870007558A true KR870007558A (en) 1987-08-20
KR920000675B1 KR920000675B1 (en) 1992-01-20

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KR1019870000045A KR920000675B1 (en) 1986-01-08 1987-01-07 Flasma treatment ending point decision method ant its device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2564312B2 (en) * 1987-07-17 1996-12-18 株式会社日立製作所 Etching end point determination method and apparatus
US6149761A (en) * 1994-12-08 2000-11-21 Sumitomo Metal Industries Limited Etching apparatus and etching system using the method thereof
JPH08232087A (en) 1994-12-08 1996-09-10 Sumitomo Metal Ind Ltd Method for detecting end point of etching and etching device
JP2001007084A (en) * 1999-06-21 2001-01-12 Nec Corp Method for determining termination of etching

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JPH0770516B2 (en) 1995-07-31
KR920000675B1 (en) 1992-01-20
JPS62159431A (en) 1987-07-15

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