KR850008654A - 절연세라믹 조성물 및 그 제조방법 - Google Patents
절연세라믹 조성물 및 그 제조방법 Download PDFInfo
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- KR850008654A KR850008654A KR1019850003641A KR850003641A KR850008654A KR 850008654 A KR850008654 A KR 850008654A KR 1019850003641 A KR1019850003641 A KR 1019850003641A KR 850003641 A KR850003641 A KR 850003641A KR 850008654 A KR850008654 A KR 850008654A
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- Prior art keywords
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- oxide
- flux
- ceramic composition
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- 239000000919 ceramic Substances 0.000 title claims 37
- 239000000203 mixture Substances 0.000 title claims 22
- 238000004519 manufacturing process Methods 0.000 title claims 3
- 238000009413 insulation Methods 0.000 title claims 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 14
- 230000004907 flux Effects 0.000 claims 13
- 239000002243 precursor Substances 0.000 claims 10
- 239000011787 zinc oxide Substances 0.000 claims 7
- 229910052810 boron oxide Inorganic materials 0.000 claims 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims 6
- 229910002113 barium titanate Inorganic materials 0.000 claims 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims 5
- 229910002115 bismuth titanate Inorganic materials 0.000 claims 5
- 229910000428 cobalt oxide Inorganic materials 0.000 claims 5
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 5
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 5
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910000464 lead oxide Inorganic materials 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- XZOKYKLQSFDMBN-UHFFFAOYSA-M [B+]=O.[O-2].[OH-].[Mn+2] Chemical compound [B+]=O.[O-2].[OH-].[Mn+2] XZOKYKLQSFDMBN-UHFFFAOYSA-M 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 238000005452 bending Methods 0.000 claims 1
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000005245 sintering Methods 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
- C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
- C04B35/4684—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase containing lead compounds
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
내용없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (15)
- 티탄산바륨 91.6-95.5중량%, 오산화니오븀 0.91-1.49중량%, 산화코발트 0.18-0.31중량%. 3산화비스무트 1.04-1.87중량%, 이산화티타늄 0.68-1.23중량%, 산화납 0.67-1.20중량%, 산화붕소 0.26-0.46중량%, 산화아연 0.82-1.49중량% 및 이산화망간 0-0.11중량%로 구성된 것을 특징으로 하는 절연세라믹 조성물.
- 산화상태에서 티탄산바륨 98.0-99중량%, 오산화니오븀 0.97-1.54중량%, 산화코발트 0.19-.032중량%를 함유할 수 있을 정도의 비율로 금속산화물이나 그것의 전구물질로 구성된 비세라믹이 93.5-96.5중량% 포함되어 있고, 산화 상태에서 티탄산비스무트(Bi2Ti2O7) 16-60중량%, 티탄삽납 8-52중량%, 산화아연 18-35중량%, 산화붕소 5-11중량%를 함유할 수 있을 정도의 비율로 금속산화물이나 그것의 전구물질로 구성된 세라믹 플럭스가 3.5-6.5중량% 포함되어 있으며, 상기 비세라믹과 상기 세라믹 플럭스의 결합무게중 0-0.114중량%의 이산화망간이 함유될 수 있을 정도의 비율로 이산화망간이나 그것의 전구물질이 포함되어 있는 혼합물을 굽음에 의해 형성되는 것을 특징으로 하는 절연세라믹 조성물.
- 제2항에 있어서, 상기 혼합물이 상기 비세라믹을 95중량% 함유하고 상기 세라믹 플럭스를 5중량%함유하고 있는 것을 특징으로 하는 절연세라믹 조성물.
- 제2항에 있어서, 상기 티탄산비스 무트와 상기 티탄산납의 중량비율이 7.33:1과 0.33:1 사이인 것을 특징으로 하는 절연세라믹 조성물.
- 제2항에 있어서, 상기 티탄산비스무트와 상기 티탄산납의 결합된 무게와 상기 산화아연과 상기 산화 붕소의 결합된 무게의 비율이 3.20:1과 1.24:1 사이인 것을 특징으로 하는 절연세라믹 조성물.
- 제2항에 있어서, 상기 산화아연이 상기 비세라믹과 상기 세라믹플럭스의 결합된 무게중 1.2-1.60중량%인 것을 특징으로 하는 절연 세라믹 조성물.
- 제2항에 있어서, 상기 산화붕소가 상기 비세라믹과 상기 세라믹 플럭스의 결합된 무게중 0.38-0.50중량%인 것을 특징으로 하는 절연세라믹 조성물.
- 제2항에 있어서, 유전율이 2400 이상인 것을 특징으로 하는 절연세라믹 조성물.
- 제2항에 있어서, 상기 조성물이 1100°-1140°C의 온도에서 상기 비세라믹, 상기 세라믹 플럭스 및 상기 이산화망간 또는 그것의 산화전구물질을 소결함에 의해 형성되는 것을 특징으로 하는 절연세라믹 조성물.
- 제2항에 있어서, 상기 조성물의 정전용량이 25°C일때의 정전용량에 대해 -55°C와 125°C사이의 온도에서 15% 이내로 변화하는 것을 특징으로 하는 절연세라믹 조성물.
- 유전율이 2400 이상이고, 티탄산바륨 91.6-95.5중량%, 오산화니오븀 0.91-1.49중량%, 산화코발트 0.18-0.31중량%, 3산화비스무트 1.04-1.87중량%, 이산화티타늄 0.68-1.23중량%, 산화납 0.67-1.20중량%, 산화붕소 0.26-0.46중량%, 산화아연 0.8-1.49중량% 및 이산화망간 0-0.11중량% 함유되어 있으며, 정전용량이 25°C일때의 정전용량에 대해 -55°C와 125°C 사이의 온도에서 15% 이내로 변화하는 것을 특징으로 하는 절연세라믹 조성물.
- 산화상태에서 티탄산바륨 98.31중량%, 오산화니오븀 1.40중량%, 산화코발트 0.29중량%를 함유할 수 있을 정도의 비율로 금속산金루이나 그것의 전구물질로 구성된 비세라믹이 95.24중량%, 포함되어 있고 산화상태에서 티탄산비스무트(Bi2Ti2O7) 27.99중량%, 티탄산납 40.02중량, 산화아연 24.4중량%, 산화붕소 7.6중량%를 함유할 수 있을 정도의 비율로 금속산화물이나 그것의 전구물질로 구성된 세라믹 플러스가 4.76중량% 포함되어 있으며, 상기 비세라믹과 상기 세라믹 플럭스의 결합무게중 0.05중량%의 이산화망간이 함유될 수 있을 정도의 비율로 이산화망간이나 그것의 전구물질이 포함되어 있는 것으로부터 형성된 것을 특징으로 하는 절연세라믹 조성물.
- 절연세라믹 조성물을 제조하는 방법에 있어서, 산화상태에서 티탄산바륨 98.0-99중량%, 오산화니오븀 0.97-1.54중량%, 산화코발트 0.19-0.32중량%를 함유할 수 있는 정도의 비율로 금속산화물이나 그것의 전구물질로 구성된 비세라믹, 산화상태에서 티탄산비스무트(Bi2Ti2O7)16-60중량%, 티탄산납 8-52중량%, 산화아연 18-35중량%, 산화붕소 5-11중량%를 함유할 수 있을 정도의 비율로 금속산화물이나 그것의 전구물질로 구성된 세라믹 플럭스, 상기 비세라믹과 상기 세라믹 플럭스의 결합무게중 0-0.114중량%의 이산화망간이 함유될 수 있을 정도의 비율로 이산화망간이나 그것의 전구물을 혼합시키고, 상기에서 혼합된 물질을 1100-1400°C의 온도에서 굽는 것을 특징으로 하는 절연세라믹 조성물을 제조하는 방법.
- 제13항에 있어서, 상기 비세라믹과 상기 세라믹 플럭스의 상기 혼합물이 상기 세라믹 플럭스를 3.5-6.5중량% 함유하고, 상기 비세라믹을 93.5-96.5중량% 함유하는 것을 특징으로 하는 절연세라믹 조성물을 제조하는 방법.
- 제13항에 있어서, 상기 비세라믹과 상기 세라믹 플럭스의 상기 혼합물이 상기 비세라믹을 95중량%함유하고 상기 세라믹 플럭스를 5중량% 함유하는 것을 특징으로 하는 절연세라믹 조성물을 제조하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019890016858A KR900002529B1 (ko) | 1984-05-23 | 1989-11-17 | 절연세라믹 조성물 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US06/613,250 US4540676A (en) | 1984-05-23 | 1984-05-23 | Low temperature fired dielectric ceramic composition with flat TC characteristic and method of making |
US613250 | 1984-05-23 |
Related Child Applications (1)
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KR1019890016858A Division KR900002529B1 (ko) | 1984-05-23 | 1989-11-17 | 절연세라믹 조성물 |
Publications (2)
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KR850008654A true KR850008654A (ko) | 1985-12-21 |
KR910002185B1 KR910002185B1 (ko) | 1991-04-06 |
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KR1019850003641A KR910002185B1 (ko) | 1984-05-23 | 1985-05-23 | 절연 세라믹 조성물 및 그 제조방법 |
Country Status (9)
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US (1) | US4540676A (ko) |
EP (1) | EP0169636B1 (ko) |
JP (1) | JPS6136171A (ko) |
KR (1) | KR910002185B1 (ko) |
CN (1) | CN1007891B (ko) |
AT (1) | ATE34374T1 (ko) |
BR (1) | BR8502421A (ko) |
CA (1) | CA1256689A (ko) |
DE (1) | DE3562767D1 (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61275164A (ja) * | 1985-05-03 | 1986-12-05 | タム セラミツクス インコ−ポレイテツド | 誘電体セラミック組成物 |
EP0205137A3 (en) * | 1985-06-14 | 1987-11-04 | E.I. Du Pont De Nemours And Company | Dielectric compositions |
US4898844A (en) * | 1986-07-14 | 1990-02-06 | Sprague Electric Company | Process for manufacturing a ceramic body having multiple barium-titanate phases |
US4816430A (en) * | 1987-06-09 | 1989-03-28 | Tam Ceramics, Inc. | Dielectric ceramic composition |
DE3913117A1 (de) * | 1989-04-21 | 1990-10-25 | Du Pont Deutschland | Verfahren zur herstellung von elektrisch leitfaehigen mustern |
JPH03276510A (ja) * | 1990-03-26 | 1991-12-06 | Murata Mfg Co Ltd | 温度補償用磁器誘電体 |
DE69409881T2 (de) * | 1993-07-26 | 1998-08-27 | Murata Manufacturing Co | Dielektrische keramische Zusammensetzung |
IL115053A (en) | 1994-09-01 | 1999-11-30 | Cabot Corp | Ceramic slip compositions and method for making the same |
US5550092A (en) * | 1995-02-10 | 1996-08-27 | Tam Ceramics Inc. | Ceramic dielectrics compositions |
JP3161278B2 (ja) * | 1995-04-26 | 2001-04-25 | 株式会社村田製作所 | 誘電体磁器組成物 |
US5571767A (en) * | 1995-08-21 | 1996-11-05 | Ferro Corporation | Low fire X7R dielectric compositions and capacitors made therefrom |
US6359327B1 (en) * | 1998-03-05 | 2002-03-19 | Murata Manufacturing Co., Ltd. | Monolithic electronic element fabricated from semiconducting ceramic |
JP3376911B2 (ja) * | 1998-03-05 | 2003-02-17 | 株式会社村田製作所 | 半導体セラミックおよび半導体セラミック素子 |
JP3709752B2 (ja) * | 1999-01-26 | 2005-10-26 | 株式会社村田製作所 | 誘電体セラミック組成物及びセラミック多層基板 |
JP3930814B2 (ja) * | 2003-01-24 | 2007-06-13 | Tdk株式会社 | 複合誘電体材料および基板 |
CN100369162C (zh) * | 2004-11-12 | 2008-02-13 | 国巨股份有限公司 | 介电材料及其制备方法 |
US20070253140A1 (en) * | 2006-04-28 | 2007-11-01 | Randall Michael S | Base metal electrode multilayer capacitor with localized oxidizing source |
CN101848879B (zh) * | 2007-11-06 | 2013-08-14 | 费罗公司 | 无铅无镉的、低温烧成的x7r介电陶瓷组合物及制备方法 |
CN102584216B (zh) * | 2012-01-13 | 2014-08-27 | 深圳顺络电子股份有限公司 | 一种高介电常数材料在制备介电磁性复合器件中的用途 |
CN102659400B (zh) * | 2012-04-27 | 2013-07-24 | 陕西科技大学 | 一种在玻璃基板表面制备焦绿石相钛酸铋功能薄膜的方法 |
EP3166905B1 (en) | 2014-07-09 | 2020-09-02 | Ferro Corporation | Mid-k ltcc compositions and devices |
CN104446337A (zh) * | 2014-11-04 | 2015-03-25 | 无锡贺邦金属制品有限公司 | 硬质合金冲压件 |
KR102005291B1 (ko) | 2015-02-27 | 2019-07-30 | 페로 코포레이션 | 로우-k 및 미드-k ltcc 유전체 조성물 및 소자 |
TWI634092B (zh) | 2015-07-23 | 2018-09-01 | 菲洛公司 | 與鎳電極倂用之cog介電組成物及形成電子組件之方法 |
US10065894B2 (en) | 2015-08-05 | 2018-09-04 | Ferro Corporation | High-K LTCC dielectric compositions and devices |
CN113793716B (zh) * | 2021-11-17 | 2022-02-25 | 西安宏星电子浆料科技股份有限公司 | 一种低电压系数电阻浆料 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5421600A (en) * | 1978-05-11 | 1979-02-17 | Taiyo Yuden Kk | Magnetic dielectric having flat temperature characteristic |
US4379854A (en) * | 1981-02-06 | 1983-04-12 | Erie Technological Products, Inc. | Low temperature firing (1800°-2100° F.) of barium titanate with flux (lead titanate-bismuth titanate-zinc oxide and boron oxide) |
US4459364A (en) * | 1982-09-13 | 1984-07-10 | North American Philips Corporation | Low-fire ceramic dielectric compositions |
-
1984
- 1984-05-23 US US06/613,250 patent/US4540676A/en not_active Expired - Lifetime
-
1985
- 1985-05-22 DE DE8585303613T patent/DE3562767D1/de not_active Expired
- 1985-05-22 CA CA000482036A patent/CA1256689A/en not_active Expired
- 1985-05-22 BR BR8502421A patent/BR8502421A/pt unknown
- 1985-05-22 AT AT85303613T patent/ATE34374T1/de active
- 1985-05-22 JP JP10846785A patent/JPS6136171A/ja active Granted
- 1985-05-22 EP EP85303613A patent/EP0169636B1/en not_active Expired
- 1985-05-23 KR KR1019850003641A patent/KR910002185B1/ko not_active IP Right Cessation
- 1985-08-27 CN CN85106434A patent/CN1007891B/zh not_active Expired
Also Published As
Publication number | Publication date |
---|---|
ATE34374T1 (de) | 1988-06-15 |
CN85106434A (zh) | 1987-03-18 |
BR8502421A (pt) | 1986-01-21 |
CA1256689A (en) | 1989-07-04 |
CN1007891B (zh) | 1990-05-09 |
KR910002185B1 (ko) | 1991-04-06 |
EP0169636A1 (en) | 1986-01-29 |
EP0169636B1 (en) | 1988-05-18 |
JPH0323502B2 (ko) | 1991-03-29 |
JPS6136171A (ja) | 1986-02-20 |
DE3562767D1 (en) | 1988-06-23 |
US4540676A (en) | 1985-09-10 |
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